Spintronics: How spin can act on charge carriers and vice versa

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Presentation transcript:

Spintronics: How spin can act on charge carriers and vice versa Tomas Jungwirth University of Nottingham Institute of Physics Prague

Reading by GMR (TMR) Writing by STT STT-MRAM Fert, Grünberg, et al. 1988 Nobel Prize 2007 Sloncyewski, Berger, 1996 Buckley Prize at APS MM 2013

Read-out: non-relativistic giant magnetoresistance (GMR) Ie Ie Fert, Grünberg, et al. 1988 Nobel Prize 2007

Read-out: non-relativistic giant magnetoresistance (GMR) Fert, Grünberg, et al. 1988 Nobel Prize 2007 Antiferromagnetic arrangement of a ferromagnetic multilayer at B=0

Writing information in spin-valve: towards spintronic memory (MRAM) 1. AFM coupling between FMs at B=0 FM FM FM 2. One FM flips harder than the other FM Soft FM Hard FM Soft FM Hard FM 3. One FM pinned by AFM material Fixed FM AFM Soft FM Fixed FM AFM Soft FM

Towards reliable switching of a particular MRAM bit Fixed FM NM AFM Soft FM

Toggle switching  first commercial MRAMs FM “Synthetic AFM“ FM Fixed FM AFM

Writing by current: non-relativistic spin-transfer torque (STT) Spins injected from external polarizer in a non-uniform magnetic structure Mp M Ie Sloncyewski, Berger, 1996 Buckley Prize at APS MM 2013

MRAM: universal memory Write with magnetic field: on market since 2006 scales with current Write with current (STT-MRAM): on market since 2013 scales with current density

MRAM: universal memory Compatible with CMOS GB MRAMs in few years

Conventional architecture with CMOS New architectuture with MRAM kB MB GB huge gap TB

Worldwide MRAM development

Spin-transistor Datta, Das, APL 1990

Conventional architecture with CMOS New architectuture with spin-memory/logic

Read-out: non-relativistic giant magnetoresistance (GMR) Ie Ie Fert, Grünberg, et al. 1988 Nobel Prize 2007

Read-out: relativistic anisotropic magnetoresistance (AMR) Spintronic effect 150 years ahead of time M Ie Kelvin, 1857

Read-out: relativistic anisotropic magnetoresistance (AMR) Spintronic effect 150 years ahead of time M Ie Kelvin, 1857

Two paradigms for spintronics “Mott“ non-relativistic two-spin-channel model of ferromagnets I I Mott, 1936 “Dirac“ relativistic spin-orbit coupling I I Dirac, 1928

2 2 Spin-orbit coupling nucleus rest frame electron rest frame Lorentz transformation  Thomas precession

Spin-orbit coupling: quantum relativistic physics

Spin-orbit coupling: quantum relativistic physics Dirac equation

Spin-orbit coupling: quantum relativistic physics

 Ultra-relativistic quantum particles (neutrino) Dirac equation spin and orbital motion coupled 

 Ultra-relativistic quantum particles (neutrino) Dirac equation spin and orbital motion coupled 

  Ultra-relativistic quantum particles (neutrino) Dirac equation spin and orbital motion coupled  

Ohmic “Dirac“ device: AMR Kelvin, 1857 Magnetization-orientation-dependent scattering

Ohmic “Mott“ device: GMR Fert, Grünberg, 1988 Spin-channel-dependent scattering

Tunneling “Mott“ device: TMR Julliere 1975, Moodera et al., Miyazaki & Tezuka 1995 MRAM Spin-channel-dependent tunneling DOS

Tunneling “Dirac“ device: TAMR Gould, TJ et al. PRL ‘04 Magnetization-orientation-dependent tunneling DOS

 Magnetization-orientation-dependent chemical potential Chemical potential controlled “Dirac“ device Wunderlich, TJ et al. PRL ‘06

 Magnet Dielectric M Non-magnetic channel I I Dirac spintronic device without current through magnet  I I Chemical potential of magnetic gate changes Charge on magnetic gate changes Polarisation charge on non-magnetic channel  Magnet - + Dielectric - + M Non-magnetic channel Ciccarelli, Ferguson, TJ et al. APL ‘12

 Magnet Dielectric M Non-magnetic channel I I Dirac spintronic device without current through magnet  I I Chemical potential of magnetic gate changes Charge on magnetic gate changes Polarisation charge on non-magnetic channel  Magnet - + Dielectric - + M Non-magnetic channel Ciccarelli, Ferguson, TJ et al. APL ‘12

 Magnet Dielectric M Non-magnetic channel I I Dirac spintronic device without current through magnet  I I Chemical potential of magnetic gate changes Charge on magnetic gate changes Polarisation charge on non-magnetic channel  Magnet - + Dielectric - + M - + Non-magnetic channel - + - + Ciccarelli, Ferguson, TJ et al. APL ‘12

DVg = Dm/e Dirac spintronic device without current through magnet Ciccarelli, Ferguson, TJ et al. APL ‘12

Direct approach to spin-transistor Inverted approach to spin-transistor

Direct approach to spin-transistor Inverted approach to spin-transistor

Direct approach to spin-transistor Inverted approach to spin-transistor

Direct approach to spin-transistor Inverted approach to spin-transistor

Direct approach to spin-transistor Inverted approach to spin-transistor