Electrical Properties of Defects in Carbon Nanotubes Brett Goldsmith UC Irvine Department of Physics and Astronomy Collins Group.

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Presentation transcript:

Electrical Properties of Defects in Carbon Nanotubes Brett Goldsmith UC Irvine Department of Physics and Astronomy Collins Group

SPM Studies of Nanotubes There have been a number of studies to characterize the frequency and effects of defects in nanotubes. Some unanswered questions still remain: –Is gate dependence only based on band structure? –Are high resistance devices always dominated by contact effects? Freitag et al, PRL 89 (21) 2002

source electrodedrain electrode nanotube Insulator Gate Nanotube Transistors

Scanned Gate Microscopy Setup Source V SD VGVG V tip Drain 1 M apply AC+DC back gate lock in on AC current here apply DC tip gate

SGM – Semiconducting Nanotube 3 V DC back Gate

SGM – Gate Dependance 5 V DC back Gate

SGM – Metallic Tube

Kelvin Probe Microscopy Source V SD VGVG V tip Drain 1 M DC voltage across nanotube AC voltage between tip and entire sample

Local Voltage Drops 900 kΩ 570 kΩ ? ?

Changing the Voltage Profile 2V 3V

Combining SGM and KFM

Summary metallic nanotubes can have local gate dependence gate sensitive regions correspond to points of local voltage drops Dr. Phil Collins Dr. Yuwei Fan Nathan Emmott Derek Kingrey Alex Kane Bucky Khalap Jorge Guerra Kevin Loutherback ACS-PRF