The Thermal Annealing Effect on The Residual Stress and Mechanical Property in The Compressive stressed DLC Film H. W. Choi, M. -W. Moon, T. -Y. Kim2, K. -R. Lee2, K. H. Oh 1. Materials Science and Engineering, Seoul National University 2. Future Technology Research Division, Korea Institute of Science and Technology Introduction Experimental condition Purpose of this work Deposition Annealing Intrinsic compressive stress of DLC - Prevent the growth of thick films - Cause a buckling and delamination Temperature Rapid Thermal Processing : 200-600°C R.F.PACVD + CH4 2min One of method to reduce residual stress, we studied thermal annealing effect and thermal cyclic annealing. We revealed the relation between the Thermal annealing and residual stress with mechanical properties change and interface adhesion of DLC films. + Thermal cycling annealing Tem.: 200, 300°C Time : 10, 60 min (Holding time) Si 500 μm Ar cleaning 1 min a-c:H 1400Å Time Delamination of DLC 1 min 10 min 1 min Stress reduction by cycling annealing Raman spectroscopy Experimental Results (a) as-deposited (b) 600 ° C Stress reduction by annealing Conclusion Adhesion reduction Evolution of delamination As increasing annealing temperature, • sp2 bond were progressively increased with D band to a higher and G band shift to a lower wave number. • Stress reduction were observed with adhesion deterioration until 500°C while maintained its mechanical properties. By Thermal cyclic annealing, • A Stress reached its minimum value within 1cycling or 2hour • A higher and shortest holding annealing temperature is more effective than lower and longest holding annealing temperature.