Chapter 6 Process Yields 半導體製程 材料科學與工程研究所 張翼 教授

Figure 6.1 Major yield measurement points.

Figure 6.2 Accumulated (wafer fab) yield calculation.

Figure 6.3 Substeps of oxidation process.

Figure 6.4-(1) Mask defects: (a) spot

Figure 6.4-(2) Mask defects: (b) hole

Figure 6.4-(3) Mask defects: (c) inclusion

Figure 6.4-(4) Mask defects: (d) protrusion

Figure 6.4-(5) Mask defects: (e) break

Figure 6.4-(6) Mask defects: (f) bridge (Source: Solid State Technology, July 1993, page 95)

Figure 6.5 Effect of larger wafer diameter on percentage of partial die.

Figure 6.6 Effect of processing larger die on larger wafers.

Figure 6.7 Die size versus number of die on wafer.

Figure 6.8 Effect of dislocations on wafer-sort yield for different wafer diameters.

Figure 6.9 Typical location of functioning die after wafer sort.

Figure 6.10 Effect of defects of sort yield for different die sizes.

Figure 6.11 “Killer” defects and nonfatal defects.

Figure 6.12 Wafer sort yield models.

Figure 6.13 Murphy’s yield model, showing die yield as a function of die size defect density.

Figure 6.14 Plot of wafer-sort yields.

Figure 6.15 Overall yield formula.

Figure 6.16 Typical yields for various products.

Figure 6.17 Yield changes with process maturity levels.