Nanowire-based polychromatic Leds ultra-efficient rgb LEDs based on nanowire technology Olof Hultin, RISE Acreo

Challenge: Low efficiency in green and red nitride LEDs

Solution: Nano-LEDs with InGaN barrier layers InGaN with high material quality can be achieved in nanostructures A method to reshape nanowire based structures to exhibit flat c- planes has been developed in Lund High In-content, dislocation-free, InGaN c-planes  Efficient green and red LEDs

Highlights project 1 Crystal growth conditions optimized for high In composition (up to 18%), Bi et al. J. Appl. Phys 2018 Nano-LEDs realized in blue, green, yellow and red, Bi et al. Submitted 2018 Characterization methods developed Devices and setup for electroluminescence Cathodoluminescence AFM for local current injection Single platelet electroluminescence

Project 2 outline Further exploration and optimization of growth parameters and methods Optimize device structure Scale up chip size Improve homogeneity Characterize devices and provide feedback for epitaxy Develop new optimized device design Develop process for packaging Implement more advanced characterization methods Fabricate demonstrators