Energy Conversion Devices, Inc. OVONIC COGNITIVE COMPUTER Energy Conversion Devices, Inc. Rochester Hills , MI November 23, 2005

Ovonic Cognitive Computer Ovonic Electrical Cognitive Computer Ovonic Optical Cognitive Computer Hybrid Electrical/Optical Ovonic Cognitive Computer Ovonic Cognitive Device Ovonic Threshold Switch Ovonic Unified Memory Device –Programmable Resistor Ovonic Multi-terminal Threshold Device Ovonic Multi-terminal Memory Device Hybrid Ovonic Electrical/Optical Memory Device

Applications of Ovonic Phase Change Technology Commercial Products Optical Data Storage CD DVD BluRay Commercial Development Ovonic Unified Memory – Ovonyx-Intel-STM-Elpida - Others in active negotiation Active Development Ovonic Cognitive Computer Optical Routers Frequency Selective Surfaces Optical Modulator Ovonic Unified Memory-BAE Radiation-Hardened Non-Volatile RAM 4Mb NVRAM 16 Mb stack 16 Mb NVRAM 64 Mb stack

Nerve Cell input output axon synapse Neurosynaptic Cell Ovonic Single and Multiple Cells have the same properties as neurons and biological cells Output fires when the threshold is reached by summing the inputs

Ovonic Cognitive Device Existing CMOS Technology is ill suited to implement complex neural networks large synapse size limited functionality What is needed is a small, fast circuit to emulate neural behavior analog storage nonlinear response thresholding behavior The Ovonic Cognitive Computing (neuro-synaptic element) can implement all these functions in a single small device

Scientific Basis Threshold Characteristics Materials Fundamental Reconfiguration through change in the total interactive environment Influence of Lone pair bonds Multitude of d-orbital interactions Different bonding hybridization Threshold Characteristics Field/current initiation of dense plasma Sub-nanosecond switching (beyond measurement capability) Constant current density in unconfined filaments Very high density current source Phase Change Characteristics Amorphous/crystalline transformation Conformational changes provide fast transitions Non-volatile states Properties Large changes in conductivity, index, absorption, several others

I-V Characteristics Ovonic Threshold Device Ovonic Memory Device Switching in chalcogenide materials based on lone-pair excitation: Threshold --- noncrystallizing --- OTS Memory --- phase change --- OMS The voltage and current characteristics can be tailored for the requirements of the application

Ovonic Universal Memory Cycle Life The intrinsic lifetime is not limited. Engineering of the adjacent environment extends the life. Continued testing to 1014 would have taken another year

OUM Multi-State Data Storage PROGRAMMING VOLTAGE (V) DEVICE RESISTANCE (Ohms) For Storage: Multiple bits per cell increases storage density and reduces cost For Processing: The analog characteristic provides ideal means for synaptic weighting

Switching Life of Ovonic Threshold Switches

Current Capacity of Ovonic Threshold Switches 2400 angstrom diameter 3.2X107 A/cm2 Device Failure Ovonic Threshold Switches can conduct well over 30 million Amperes per square centimeter, 50 times the current of bipolar silicon devices. They scale to smaller sizes than conventional transistors and are faster. Their speed has not been measured because it is faster than measuring equipment.

Ovonic Multi-Terminal Threshold Device

The Ovonic Cognitive Computer Conventional Silicon Computers Each Element: Computes based on single bit (binary) manipulation Manipulates data sequentially, bit by bit Ovonic Cognitive Computer Manipulates, processes and stores information in a non- volatile radiation hard and multilevel manner Hardware and software are unified Low voltage and low current operation Performs arithmetic operations (+,-,x, ) on multi-bit numbers (0,1,2,3…n) Performs modular arithmetic Combines logic and memory in a single device Executes multi-valued logic Stores the result in a non-volatile manner Simple, powerful encryption Acts as a neurosynaptic cell; i.e. possesses intelligence capability Scales down to angstrom scale dimensions; huge density Device speed in the picosecond range Capable of massive parallelism; also addressing different values

The Ovonic Cognitive Computer Arrays of computation and storage elements are combined in a conventional computer which: Requires separate storage and processor units or regions Has limited parallel processing capability Is limited to Von Neumann operations An array of Ovonic elements Easily factors large numbers Has attributes of proposed quantum computers without their limitations, such as analogs of quantum entanglement and coherence at practical conditions and environments Performs high level mathematical functions (e.g. vector and array processing) Has high 3-dimensional interconnectivity, huge density, giving rise to high speed, hyper-parallel processing (i.e. millions of interconnected processors) Interconnectivity is simply and inherently reconfigurable Has adaptive learning capability The Ovonic Devices are: Mass produced in exceptionally dense, all thin film, uniquely interconnected arrays Mass manufactured as a thin film, flexible device using proven technologies Ovonic Quantum Control Device - unique, high speed, low cost 3 or more terminal device. Nanostructure capable of carrying large current density

Ovonic Cognitive Device Operation

Energy Conversion Devices, Inc. Microsoft, Amid Dwindling Interest, Talks Up Computing as a Career Energy Conversion Devices, Inc. “If you invent a breakthrough in artificial intelligence, so machines can learn,” Mr. Gates responded, “that is worth 10 Microsofts.” “If you invent a breakthrough in artificial intelligence, so machines can learn,’ Mr. Gates responded, “that is worth 10 Microsofts.” End of Article Excerpt from Article from The New York Times – March 1, 2004

ECD Ovonics President, Chief Scientist and Technologist Awarded The 2005 Innovation Award for Energy and the Environment by The Economist The Award Honors Ovshinsky for His Pioneering Work in and Development of the High-Powered NiMH Battery Nov. 15 , 2005 — Energy Conversion Devices, Inc. today announced that Stanford R. Ovshinsky, president, chief scientist and technologist of ECD Ovonics, was awarded the 2005 Innovation Award for Energy and the Environment by The Economist for his pioneering work in and the development of the high-powered NiMH battery technology. The Economist's Innovation Award celebrates the global achievements and innovations of individuals who have positively transformed global business.

“This is a time period where environmental improvement is going to lead toward profitability. This is not a hobby to make people feel good.” – GE targeted revenue from Clean Energy Technology is over $20 billion by 2010. Jeff Immelt, CEO, General Electric June 6, 2005 Business Week

The Role of Disorder SMALL PARTICLES HAVE UNIQUE PROPERTIES THAT BRIDGE THE GAP BETWEEN CRYSTALLINE AND AMORPHOUS SOLIDS Small geometry gives rise to new physics 50 Angstrom particles are “mostly surface” – gives rise to new topologies and unusual bonding configurations 21% of all atoms in a 50 Angstrom particle are on the surface and ~ 40 % are within one atom of the surface Compositional disorder in multi-element nano-alloys is large in small particles… e.g. in a 50 Angstrom particle, each element in a 10 element alloy will show 3% variation in concentration just due to statistics Quantum confinement effects are apparent Band structure effects are disturbed

The Role of Disorder Disorder provides the degrees of freedom to design local order/environments Results in a Total Interactive Environment (TIE) with a distribution/spectrum of bonding/non-bonding sites Many new synthetic materials New physical, electronic and chemical mechanisms Amorphous = thin-film large areas