The WODEAN project – outline and present status

Slides:

Advertisements

Similar presentations

Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.

Advertisements

Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials.

TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES L.F. Makarenko*, L.I. Murin**, M. Moll***, F.P. Korshunov**,

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,

Leonid I. Murin 1,2 and Bengt G. Svensson 2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials.

Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments

On MCz SCSI after 24 GeV/c proton irradiation 12th RD50 Workshop Ljubljana, 2-4 June 2008 D. Creanza On behalf of the Bari and Pisa RD50 groups.

1Ruđer Bošković Institute, Zagreb, Croatia

M. Scaringella, M. Bruzzi, D. Menichelli, R. Mori, TSC studies on n- and p-type MCz silicon pad detectors irradiated with neutrons up to n/cm 2 15°

Detectors and electronics for Super-LHC: IRRADIATION RESULTS Andrea Candelori INFN Sezione di Padova.

11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.

KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik

KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS L.F. Makarenko*, M. Moll**, F.P. Korshunov***,

Gunnar Lindstroem – University of HamburgHamburg workshop 24-Aug-061 Radiation Tolerance of Silicon Detectors The Challenge for Applications in Future.

RD50 Katharina Kaska1 Trento Workshop : Materials and basic measurement problems Katharina Kaska.

The contribution from The contribution from photoluminescence (PL) Gordon Davies, King’s College London.

Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.

Development of semiconductor detectors for very harsh

M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.

Gunnar Lindstroem – University of Hamburg1 G. Lindstroem a, E. Fretwurst a, F. Hönniger a, A. Junkes a, K. Koch a and I. Pintilie a,b a Institute for Exp.

Barbara Surma, Paweł Kamiński, Artur Wnuk and Roman Kozłowski

RD50 RD50 workshop FreiburgKatharina Kaska 1 Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors Katharina Kaska, Michael.

J.Vaitkus. WODEAN Workshop,13-15 May, 2010, Bucurest Photoresponse spectrum in differently irradiated and annealed Si Juozas Vaitkus Vilnius University,

J.Vaitkus et al. RD , Bari Deep levels roles in non-equilibrium conductivity in irradiated Si J. Vaitkus, A. Mekys, G. Mockevičius, J. Storasta,

WODEAN, June-07 Some DLTS results…. J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O Blindern, N-0316 Oslo,

D. Menichelli, RD50, Hamburg, august TSC, DLTS and transient analysis in MCz silicon Detectors at different process temperature, irradiation.

Effects of long term annealing in p-type strip detectors irradiated with neutrons to Φ eq =1·10 16 cm -2, investigated by Edge-TCT V. Cindro 1, G. Kramberger.

Gunnar Lindstroem – University of HamburgWODEAN workshop, Vilnius 02/03 June 071 Gunnar Lindstroem University of Hamburg The WODEAN Project present status.

J.Vaitkus. RD50 Workshop, Liverool, May, 2011 Deep level system Gaussian approximation according the extrinsic photoconductivity in irradiated Si.

INTERSTITIAL DEFECT REACTIONS IN P-TYPE SILICON IRRADIATED AT DIFFERENT TEMPERATURES L.F. Makarenko*, S.B. Lastovski**, L.I. Murin**, M. Moll*** * Belarusian.

Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner,

G. Steinbrück, University of Hamburg, SLHC Workshop, Perugia, 3-4 April Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance.

Joachim Erfle Summary of measurements after first irradiation of HPK samples 19 th RD50 Workshop November 2011 CERN Joachim.

Ioana Pintilie, Vilnius 2-6 june Defect investigation on MCz after 1 MeV neutron irradiation I. Pintilie 1, E. Fretwurst 2, A. Junkes 2 and G. Lindstroem.

RD50 Michael Moll – PH-TA1-SDMeeting February 25, Three R&D strategies:  Material engineering - Defect engineering of silicon (oxygenation, dimers,

Inversion Study on MCz-n and MCz-p silicon PAD detectors irradiated with 24 GeV/c protons Nicola Pacifico Excerpt from the MSc thesis Tutors: Prof. Mauro.

Defect Engineering and Pad Detector Characterization Defect engineering: Search for hydrogen enrichment in silicon is still ongoing but takes time High.

Edge-TCT studies of heavily irradiated strip detectors V. Cindro 1, G. Kramberger 1, A. Macchiolo 3, I. Mandić 1, M. Mikuž 1,2, M. Milovanović 1, P. Weigell.

Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model A. Bhardwaj 1, H. Neugebauer 2, R. Dalal 1, M. Moll 2, Geetika.

TSC results - University of Hamburg I. Pintilie a),b), E. Fretwurst b), G. Lindström b) J. Stahl b) and F. Hoenniger b) a) National Institute of Materials.

J.Vaitkus et al. PC spectra. CERN RD50 Workshop, Ljubljana, "Analysis of deep level system transformation by photoionization spectroscopy"

Charge Collection, Power, and Annealing Behaviour of Planar Silicon Detectors after Reactor Neutron, Pion and Proton Doses up to 1.6×10 16 n eq cm -2 A.

Fluence and isochronal anneal dependent variations of recombination and DLTS characteristics in neutron and proton irradiated MCz, FZ and epi-Si structures.

Charge Multiplication Properties in Highly Irradiated Thin Epitaxial Silicon Diodes Jörn Lange, Julian Becker, Eckhart Fretwurst, Robert Klanner, Gunnar.

RD50 CCE measurements and annealing studies on proton irradiated p-type MCz diodes Herbert Hoedlmosera, Michael Molla, Michael Koehlerb, Henri Nordlundc.

Simulation results from double-sided and standard 3D detectors

Ioana Pintilie, 11 th RD50 Workshop, November 2007, Geneve

Otilia Militaru Université catholique de Louvain, Belgium

Summary of research activities

Modeling Radiation Damage Effects in Oxygenated Silicon Detectors

Institute of Applied Research, Vilnius University,

PTI results on I(T) and E(x) simulations with two midgap energy levels

Defect generation and damage functions in electron irradiated silicon – dependence on the particle energy Ioana Pintilie1, R. Radu1, L. Nistor1, S.V. Nistor1,

Remarks on the measurement of thermally stimulated current

Study of radiation damage induced by 26MeV protons and reactor neutrons on heavily irradiated MCz, FZ and Epi silicon detectors N. Manna Dipartimento.

Study of radiation damage induced by 24/c GeV and 26MeV protons on heavily irradiated MCz and FZ silicon detectors N. Manna Dipartimento Interateneo di.

Homogeneity and thermal donors in p-type MCz-Si detector materials

Modeling Vacancy-Interstitial Clusters and Their Effect on Carrier Transport in Silicon E. Žąsinas, J. Vaitkus, E. Gaubas, Vilnius University Institute.

M. Bruzzi, D. Menichelli, R. Mori, M. Scaringella

Results from the first diode irradiation and status of bonding tests

16th RD 50 Workshop - Barcelona, 31 May - 2 June 2010

V2O and V3O DEFECTS IN SILICON: FTIR STUDIES

Igor Mandić1, Vladimir Cindro1, Gregor Kramberger1 and Marko Mikuž1,2

Radiation Damage in Silicon

Vladimir Cindro, RD50 Workshop, Prague, June 26-28, 2006

Deep levels induced by very high dose neutron irradiation in 4H-SiC

CCE measurements with Epi-Si detectors

Frank Hartmann on Behalf of CERN RD50 Collaboration

Presentation transcript:

The WODEAN project – outline and present status Gunnar Lindstroem – Hamburg University for the WODEAN collaboration How it all began Methods-Institutes-Persons Outline of correlated project Present status Preliminary results Outlook Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 WODEAN (WOrkshop on DEfect ANalysis), 1st meeting in Hamburg, 23-25 August 2006 idea triggered by Gordon Davies‘ talk at RD50, CERN, Nov. 2005 we need all available tools (not only DLTS, TSC) for thorough defect analysis and possible defect engineering Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Methods-Institutes-Persons C-DLTS: NIMP Bucharest and Hamburg University: I. Pintilie, E. Fretwurst, G. Lindstroem Minsk University: L. Makarenko Oslo University: B. Svensson I-DLTS: INFN and Florence University: D. Menichelli TSC: NIMP Bucharest and Hamburg University: I. Pintilie, E. Fretwurst, G. Lindstroem PITS: ITME Warsaw: P. Kaminski, R. Kozlowski PL: Kings College London: G. Davies ITME Warsaw: B. Surma Recombination lifetime: Vilnius University: E. Gaubas, J. Vaitkus FTIR: Oslo University and Minsk Joint Institute of Solid State and Semicond. Pysics: L. Murin, B. Svensson PC: Vilnius University: J. Vaitkus, E. Gaubas EPR: NIMP Bucharest: S. Nistor ITME Warsaw: M. Pawlowski Diode characteristics (C/V, I/V, TCT): CERN-PH, Hamburg University, JSI Ljubljana: M. Moll, E. Fretwurst, G. Lindstroem, G. Kramberger AND VERY IMPORTAN TOO: Irraditions: JSI Ljubljana: G. Kramberger Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Outline of Correlated Project Main issue: Feq to be tolerated in S-LHC: 1.5E16 n/cm². charge trapping: ultimate limitation for detector applications responsible trapping source: so far unknown! Charge trapping: independent of material type (FZ, CZ, epi) and properties (std, DO, resistivity, doping type). independent of irradiating particle type and energy (23 GeV protons, reactor neutrons), if F normalised to 1 MeV neutron equivalent values (NIEL). In contrast to IFD and Neff there are only small annealing effects (as studied up to T = 80°C) Correlated project: use all available methods: DLTS, TSC, PITS, PL, trecomb, FTIR, PC, EPR, diode C/V, I/V and TCT concentrate on single material only: MCz chosen with extension to std. FZ for checking of unexpected results (FZ supposed to be cleaner, MCz has larger O concentration) Use only one type of irradiation, most readily available (TRIGA reactor at Ljubljana) and do limited number of F steps between 3E11 and 3E16 n/cm² (same for all methods!) Use same isothermal annealing steps for all methods Reach first results within one year Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 1st WODEAN batch sample list F (1MeV n) C-DLTS I-DLTS TSC PITS PL trecomb FTIR PC EPR 3E11 HH,Oslo, Minsk 6E11 1E12 ITME KC, ITME Vilnius 1E13 Florence HH, NIMP 3E13 1E14 3E14 1E15 Oslo NIMP ITME 3E15 1E16 3E16 150 samples n-MCz <100>1 kΩcm (OKMETIC, CiS): 84 diodes, 48 nude standard, 16 nude thick Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 2nd WODEAN batch sample list F (1MeV n) C-DLTS I-DLTS TSC PITS PL trecomb FTIR PC EPR 3E11 HH,Oslo, Minsk 6E11 1E12 1E13 Florence HH, NIMP ITME KC, ITME Vilnius 3E13 1E14 3E14 1E15 Oslo NIMP ITME 3E15 1E16 3E16 90 samples n-FZ <111>, 2 kΩcm (Wacker, STM): 67 diodes, 24 nude thick samples; Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Irradiations 1st batch, MCz samples: Irradiation: November 2006 Delivery to Hamburg: 8 January 2007 Distribution to WODEAN members: 9 February 2007 2nd batch, FZ samples: Irradiation: April 2007 Delivery to Hamburg: 11 June (foreseen) Distribution to WODEAN members: end June 2007 Important Info about irradiations: F ≤ 1E+15 n/cm²: T ≈ 20°C, duration ≤ 10 min F ≥ 2E+15 n/cm²: high flux: dF/dt = 2E12 n/cm²s Temperature increase during irradiation 3E+15: t ≈ 25 min, temp. rising to 70-80°C within 15 min (then saturating) 1E+16: t ≈ 80 min, temp. 70-80°C as meas. with PT100 3E+16: t ≈ 4h, 10min, severe self annealing expected ? Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Present Status Macroscopic results C/V and I/V diode characteristics Stable damage I/V = aF, a = 4.1E-17 A/cm As expected, no surprises for reverse annealing Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Macroscopic results 2. TCT: trapping times, surprise in isochronal annealing! Isothermal annealing at 80°C max: 30% effect Isochronal anneal 80-260°C stable h-trapping e-trapping reduced by factor 5 Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Microscopic results 1. DLTS isothermal anneal at 80°C and 200°C Annealing of vacancy cluster, increase of VO and signal for V2=/- Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Measurements after 6 MeV electron irradiation: Difference between DLTS spectra Loss of VO, V2=/- and E5 vs loss of E4 E4 E5 E4 and E5 vacancy cluster related, 1:1 correlation liberation of V leads to increase of VO Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 2. TSC isothermal anneal at 80°C Annealing of vacancy cluster, generation of H116K (reverse annealing related?) and increase of CiOi Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 3. FTIR Fluence dependence Isothedrmal annealing of I2O Increase of defect concentration with fluence 1st order process activation energy 1.16 eV Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 4. PL Summary of annealing As received: low PL intensity, CiOi plus broad band At 80 C, no change in bandshapes after 4 mins. After 30 mins, start of observing weak CiCs and W; W continues to increase after 12 hrs and 24 hrs. After 450 C, ‘point defects’ to 1e14 cm-2; increasing dominance of broad band at higher fluences. Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

5. Photo Induced Transient Spectroscopy - Example - Trap label Ea[meV] A [s-1K-2] e1 [s-1] Ampe1[a.u] E2 [s-1] Ampe2[a.u] Identification T1_1E13 25±2 (2-5)x102 1x103 0.048 3.2x104 0.41 shallow donor T2_1E13 30±2 (3-6)x104 0.03 0.40 T3_1E13 115±5 (8-20)x105 0.12 0.46 CiCs(B)-/0 or self-interstitials related T4_1E13 315±10 (2-4)x106 0.018 0.091 V22-/- + CiOi 0/+ T5_1E13 470±20 (1-5)x107 0.024 0.11 V2-/0 + X -/0 Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

6. Photo Conductivity - Spectra - Example - F = 1E13 n/cm² F = 1E15 n/cm² Deep traps Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

7. Recombination lifetime - 1/t  F, annealing improves lifetime Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07

10th RD50 workshop - Vilnius University 04/06-June-07 Outlook Most surprising result from TCT: isochronal annealing shows reduction of electron trapping Strong changes also observed after high temp. Steps in DLTS, TSC, PL and FTIR Consequence: start with 80°C annealing and then go in 40°C steps up to at least 240°C or even higher Search for close to midgap defects using lower resistivity material, epi most likely available! Exchange of results between members will be intensified as best going on continuously, next meeting: end this year! Gunnar Lindstroem – University of Hamburg 10th RD50 workshop - Vilnius University 04/06-June-07