APRIL 1964, A McGRAW-HILL PUBLICATION PAST: United States Patent Office 3,271,591 Patented Sept. 6, 1966 SYMMETRICAL CURRENT CONTROLLING DEVICE Stanford R. Ovshinsky, Birmingham, Mich. This invention has to do with solid state current controlling devices for electrical circuits and this application is a continuation-in-part of my co-pending applications Ser. No. 118,642, filed June 21, 1961, now abandoned; … APRIL 1964, A McGRAW-HILL PUBLICATION REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES Stanford R. Ovshinsky Energy Conversion Devices, Inc., Troy, MI (Received 23 August 1968) A rapid and reversible transition between a highly resistive and conductive state effected by an electric field, which we have observed in various types of disordered semiconducting material, is described in detail. The … PHYSICAL REVIEW LETTERS VOLUME 21, NUMBER 20 11 NOVEMBER 1968 THE TIMES Jan. 30, 1963 ELECTRONIC MACHINE’S LICENSING PACT On November 30 (1962) last the Electronic Machine Company acquired from Energy Conversion Laboratories, Inc. of Detroit, an exclusive license to develop, manufacture and market in Great Britain and Eire a new generation of solid-state switching devices which could very well achieve as broad a range of application in the control of alternating current as transistors have found in direct current circuitry. Special arrangements also exist between the two firms regarding the Commonwealth and European countries.

PAST: PRESENT: The Ovshinsky Switch In 1961, Stan Ovshinsky and Laurence Pellier showed that the electron beam caused reversible phase transition in our atomically designed chalcogenide materials 2007 Non-Volatile Semiconductor Memory Workshop 22nd IEEE NVSMW August 26th – 30th, 2007 Hyatt Regency, Monterey, CA The organization was not prepared for the overflow audience of over 500 people who attended. From Proceedings of the Fifth Annual National Conference on Industrial Research, Chicago, Illinois, Sept. 18-19, 1969 (Patent application, August 22, 1968) The Ovshinsky Switch by Stanford Ovshinsky The material is switched, we have the basis for an optical mass memory. Densely packed data dots less than 2 microns in diameter are written with a finely-focused laser beam and can then be read out optically, such as by sensing the change in transmissivity or reflectivity as well as scattering that occurs in the material when it is switches. Because memory switching is reversible, the data can be erased at will and new data written in the same location. In other words, the memory film is a beam-addressable, beam-alterable mass memory medium.

PRESENT: Intel (Joint Venture Partner & Licensee) Ovonyx Licensees Intel (Joint Venture Partner & Licensee) BAE STMicroelectronics Nanochip Elpida Samsung Qimonda Optical Phase Change Memory Licensees Matsushita Electric Pioneer Sony Teijin Toshiba Plasmon Ricoh Toray TDK

Intel to sample phase change memory in 1H 2007 PRESENT: Intel to sample phase change memory in 1H 2007 By Peter Clarke (03/06/2007 12:44 PM EST) “Ed Doller, chief technology officer of the flash memory group at Intel Corp., told the meeting that Intel's 128-Mbit had demonstrated 100 million cycles endurance and much greater than 10 years data retention. ‘The phase-change memory gets pretty close to Nirvana,’ Doller said.” (Excerpt from the meeting for analysts & press held in California on March 6, 2007.)

Hynix unveils plan to become world’s top chipmaker PRESENT: Hynix unveils plan to become world’s top chipmaker AFP, Seoul, Thursday, Jul 26, 2007, Page 10 “Hynix, now the world’s fifth largest memory chipmaker, said it would boost sales from last year’s US$7.7 billion to US$18 billion by 2010 and to US$25 billion by 2012. …It aims to produce a next-generation memory chip called Phase-change Random Access Memory (PRAM) by 2009. Industry analysts expect it to become the main memory device, replacing high density flash memories, within the next decade.”

Microsoft, Amid Dwindling Interest, Talks Up Computing as a Career Future of Ovonic Optical/Electronic Devices & Circuits Microsoft, Amid Dwindling Interest, Talks Up Computing as a Career “If you invent a breakthrough in artificial intelligence, so machines can learn,” Mr. Gates responded, “that is worth 10 Microsofts.” Page 2 “If you invent a breakthrough in artificial intelligence, so machines can learn,’ Mr. Gates responded, “that is worth 10 Microsofts.” End of Article Excerpt from Article from The New York Times – March 1, 2004

FUTURE: New Physics Make it Possible to Transcend Present Day Transistors and Computers Rich and deep new physics is being used to provide unique new Ovonic Quantum Control Device. Ovonic 3-Terminal Modulation of threshold voltage Latching/non-latching threshold switching Smaller and faster (gigacycles instead of megacycles) than a transistor 50 times greater current of a transistor The world’s most powerful solid state plasma by many orders of magnitude

FUTURE: Proof of Principle Devices in the Development Stage Conventional Silicon Computers Each Element: Computes based on single bit (binary) manipulation Manipulates data sequentially, bit by bit Ovonic Thin-Film Cognitive Computer Can Combine Both Optical & Electrical Computing Manipulates, processes and stores information in a non-volatile radiation hard and multilevel manner Hardware and software are unified Low voltage and low current operation Performs arithmetic operations (+,-,x,) on multi-bit numbers (0,1,2,3…n) Performs modular arithmetic – easily factors large numbers Combines logic and memory in a single device Executes multi-valued logic Stores the result in a non-volatile manner Simple, powerful encryption Acts as a neurosynaptic cell; i.e. possesses intelligence capability Scales down to angstrom dimensions; huge density Ovonic Threshold and Modulating 3-Terminal Device so fast they’ve never been measured All Devices capable of massive parallelism and interacting functionality

Mechanism and Operation of Ovonic™ Cognitive Device Past, Present and the FUTURE: All thin-film nanocircuits based upon the new physics and unique multifunctionality discussed in this talk. Various pulsing protocols are used depending upon the nature of the task performed NUMBER OF CONSTANT AMPLITUDE PULSES Energy Conversion Devices, Inc.