Rapid Thermal CVD of Si1-xGex

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Rapid Thermal CVD of Si1-xGex RTCVD of Si1-xGex using Si2H6-GeH4 chemistry (470oC~550oC) Minimize diffusive mixing at interfaces using temperature and gas switching Need process optimization to get the quantum dots or to deposit a Ge-graded film DOE(Design of experiments) 3 factors : Temperature, flow rates of GeH4 and flow rate of Si2H6. Responses : Growth rate, Ge concentration in films, and Morphology (dot size and density) Full factorial with 3 center points Neural network modeling Using Bayesian Network AFM (Morphology) Dot density ( on Si > on SiO2 ) XRD (Ge concentration and thickness) Ge composition ration and growth rate mainly depend on the reactant ratio (PGeH4/PSi2H6 ) on SiO2 on Si 12.68% 17.75% Ge 20.48% Sung Bo Hwang The University of Texas at Austin