Substrate Nonuniformity And Other Structural Effects

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Presentation transcript:

Substrate Nonuniformity And Other Structural Effects CHAPTER 9 Substrate Nonuniformity And Other Structural Effects

9.1 Introduction

9.1 Introduction Figure 9.1 Cross section of the semiconductor part of a typical device (a) Long channel, (b) short channel.

9.2 Ion implantation and substrate nonuniformity

9.2 Ion Implantation and Substrate Nonuniformity

9.3 Substrate transverse nonuniformity

9.3.1 preliminaries

9.3.1 peliminaries

9.3.1 peliminaries

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.2 Threshold Voltage

9.3.3 Drain Current

9.3.4 Buried-Chanel Devices

9.3.4 Buried-Chanel Devices

9.3.4 Buried-Chanel Devices

9.3.4 Buried-Chanel Devices

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.4 Substrate Lateral Nonuniformity

9.5 Well Proximity Effect

9.5 Well Proximity Effect

9.5 Well Proximity Effect

9.5 Well Proximity Effect

9.5 Well Proximity Effect

9.5 Well Proximity Effect

9.6 Stress Effects

9.6 Stress Effects

9.6 Stress Effects

9.7 statistical Variability

9.7 Statistical Variability

9.7 Statistical Variability

9.7 Statistical Variability

9.7 Statistical Variability