Diodes and Circuit Protection Product Updates Adrian Mikolajczak 3/4/14

Enhanced Commodities and Breakthrough Tech Diodes + Circuit Protection Other Standard Products Progress, Continuity, Support Zeners TVS Schottky's Diode Rectifiers Bridge Rectifiers Trench Schottky’s Reverse Polarity Switches Off-Chip ESD Protectors Hot Swap Solutions OVP Switches Protection LDO’s MosFET’s Switching Transistors High Power Bipolars LDO’s Shunt Regulators Standard Regulators Op Amps Comparators Voltage Detectors Voltage/Freq. Converters MosFets IR New Beginnings xDNA Breakthrough Technology

FSV FR Devices Power Rectifiers FESD Technology Progressions FSV FR Devices MDB Dedicated Reverse Polarity Defense New Bridge Rectifiers Big Performance Small Package Request More Info Power Rectifiers FESD Lowest Leakage Power Schottky 0402 DFN (1 x 0.6 mm) Smaller, Higher Power, Lower Vf Leading Clamping Voltage IEC61000-4-5

MDB10SV 1000V Bridge Rectifier Big Performance, Small Package Features Higher Efficiency (Lower VF) 0.93 V (Typ) at 1A “Off the Curve” Surge Rating IFSM = 50 A Higher Current Rating IF(AV) = 1.2 A Small area 6.7 x 5.1 mm max. 34 mm2 Low Profile: 1.60 mm max. Lower VF, Higher Efficiency* Surge Rating “Off the Curve” The Competition * Values Collected from Competitor Data Sheets Key Applications 5-30 Watt Power Supplies LED Lighting DF10S Replacements  1N4001 to 1N4007 SMT Replacements, The MBD10SV achieves a breakthrough of big performance in a small package. With the ever-pressing need to improve power supply efficiency and reliability, the MDB10SV sets a new standard in small form-factor, efficient, robust, bridge rectifier performance. The design offers improved efficiency by achieving a 1.2 A VF of 1.015 V maximum at 25°C. This Industry Leading lower VF results in cooler and more efficient power supply operation. Better yet, the design enhances reliability with a 40 A IFSM rating to absorb high surge currents, supporting improved I2t ratings. The device also supports a rated breakdown voltage of 1000 V to avoid break down during high surge events. These performance levels, historically required package sizes of 85mm sq or larger. The MDB10SV achieves all this performance in a small form factor micro-DIP package, offering a maximum height of 1.6 mm, and requiring only 35 mm sq of board space. This truly is big performance in a small package. Fairchild: Reinventing the Fundamental Building Blocks… Again.

Product Proposal: TO277 Power Rectifier Features Package: T0277 6.5 x 4.5 x 1.1 mm typ ~250A IFSM surge estimate VF 1.02 max @ 8A, 25C ~ 0.98V typ @ 10A, 25C PD @ 10A ~ 9 to 10W Leakage 70uA max @ 1000V, 25C 1uA typ @ 400V, 25C 320uA typ @ 400V, 125C = 0.13W Must hold cathode at ~85C or less based on 7 C/W Theta JL Would need to verify hot spotting does not reduce ratings The MBD10SV achieves a breakthrough of big performance in a small package. With the ever-pressing need to improve power supply efficiency and reliability, the MDB10SV sets a new standard in small form-factor, efficient, robust, bridge rectifier performance. The design offers improved efficiency by achieving a 1.2 A VF of 1.015 V maximum at 25°C. This Industry Leading lower VF results in cooler and more efficient power supply operation. Better yet, the design enhances reliability with a 40 A IFSM rating to absorb high surge currents, supporting improved I2t ratings. The device also supports a rated breakdown voltage of 1000 V to avoid break down during high surge events. These performance levels, historically required package sizes of 85mm sq or larger. The MDB10SV achieves all this performance in a small form factor micro-DIP package, offering a maximum height of 1.6 mm, and requiring only 35 mm sq of board space. This truly is big performance in a small package. Fairchild: Reinventing the Fundamental Building Blocks… Again. Is This Interesting?

Improved Traditional Devices: S1 Family Targets Higher Efficiency Features 1 A IF(AV) Current Rating Glass Passivated Low Leakage 1 μA max at 25C 50 μA max at 125C Fast Response: 1.8 μs (typical) 30 A Surge Rating 50 to 1000 V Reverse Voltage Ratings 6.6 pF Typical Capacitance RohS Compliant Traditional SMA (DO-214AC) Package Key Applications 5-10 Watt Chargers & Power Supplies LED Lighting 1N4001 to 1N4007 SMT replacements Competitive Stack Up Fairchild Diodes Inc * On Semi * Vishay * PN S1A to S1M MRA4003 MRA4007 VF Max @1A, 25C 1.1 V Max IR @ VRRM, 25C 1 5 10 uA Typical Capacitance 6.6 -- 12 pF * Values Collected from Competitor Data Sheets in Q1 2013 S2 - 2A rectifiers S3 - 3A rectifiers RS1 - Fast Recovery Rectifiers ES1 - Ultra Fast Recovery Rectifiers Related FCS Devices:

New FSV Power Schottky’s FSV1045V 45V VF=0.44V@10A FSV1060V 60V VF=0.48V@10A FSV Schottky Roadmap Leading VF or IR 45-200V TO277: 6.5x4.3x1.1 mm Optional Power 56 & SMBF Solutions

Ultra Low Leakage, High Temp, Power Schottky (Samples Available) FSV1045R – 10A 45V, ultra low leakage 40X lower leakage at 45V for Standby Power Savings Targeted application Battery Powered Systems Systems with Strict Standby Efficiency Requirements Features Flat design, low profile – Typical height of 1mm Ultra Low Leakage Vs Temperature: 1uA Typ. @ 45V, 25C 1mA Typ. @ 45V, 125C Low VF 0.42V Typ. @ 1A, 25C 0.58V Typ. @10A, 25C 175C Operating Temperature Production Timing PQFN 5x6: 3 months from request PQFN 5x6x1.1 mm

Surface Mount & Power Schottky Rectifiers -- Orderable Under Code F -- In development -- Planning (by demand) TO-247 (TO-3P) 30A – 40A 30A TO-263 (D2PAK) 10A – 40A TO-220 7A – 30A 20A TO-220F 10A – 20A TO-252 (DPAK) 5A – 10A TO-277 10A-12A 100V-200V 10A TO-252 (DPAK) 5A/40V 5A TO-277 10A 45, 60V Mid Power SMT Schottky (SOD – 128 / SMBF / SOD-123HP 1A - 5A) PQFN5x6 10A 60V (low Ir) 3A SMx 1A - 3A 1A 0.5A SOD <1A 2014 2015 2016

FESD – New, Small, IEC61000 Protection 1st Part In Development: April Pre-Launch Key Features Low Clamping Voltage 8V @ 4A IPP IEC61000-4-5 Low Leakage: < 1uA @ 5V 40W Surge Rating < 0.5 mm Tall 1.0 x 0.6 mm typ. CJ = 38pF max RoHs Compliant Halogen Free Competitive Analysis 0402 DFN (1 x 0.6 mm) Best Protection

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