Overview of Course Goal: Primarily to develop techniques and intuition for evaluating and understanding digital (and analog) circuits, and especially FETs Circuit components: R, C, L – structure, characterization, I-V, energy storage/dissipation Circuit analysis: Laws: Ohm’s, KVL, KCL Steady excitation (and a touch of AC excitation  phasor I and V amplitude only, impedance instead of just resistance):  Equivalent circuits (series/ parallel, Thevenin, Norton)  Superposition for linear circuits  Nodal analysis  Mesh analysis

First-order transient excitation/analysis:  esp. RC as those time constants will determine propagation delay of digital circuits Semiconductors (basis of electronic revolution):  fundamental properties: intrinsic vs. extrinsic = doped, carrier type, carrier concentration, m, r, s; velocity saturation, etc.  devices: pn-diodes (many types), FETs (n-channel, p-channel, CMOS); depletion regions, threshold voltage, nonlinearity, etc. Useful circuits: amplifiers: op-amp (negative feedback), MOSFETs; rectifiers; electronically controlled switches (MOSFETs); logic gates; combinatorial logic (sum-of-products, Karnaugh maps), sequential logic, memories, registers, etc.

MOSFET Operating principles:  ID (VDS, VGS); role of m, Cox, L, W, VT; different operating regions, etc. Design/fabrication  Fabrication processes: oxidation, photolithography, etching, ion implantation, CVD, sputtering, CMP, etc.  Circuit isolation, silicon-on-insulator  Limits (propagation delay due to RC transient, lithography, power, size, etc.) Characterization  Gain; noise margins, inverter operation  Propagation delay (design for balanced operation LH and HL)  Power consumption: Power dissipated proportional to CVDS2f  Fan-out, wiring effects