Microelectronics, BSc course

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Presentation transcript:

Microelectronics, BSc course Field effect transistors 1: The JFET http://www.eet.bme.hu/~poppe/miel/en/11-JFET.pptx

The abstraction level of our study: SYSTEM + MODULE GATE Vout Vin CIRCUIT DEVICE n+ S D G 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

Most important parameter: The JFET FET = Field Effect Transistor – the flow of charge carriers is influenced by electric field transversal field is used to control Flow Channel depletion layer JUNCTION FET: depletion layers of pn-junctions close the channel Most important parameter: U0 pinch-off voltage Unipolar device: current is conducted by majority carriers Power needed for controlling the device  0 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The JFET – possible realization: n type epi-layer The width of the closed PN junction controls the conductivity of the channel PN junction  junction FET channel depletion layer 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The JFET – a "normally on" device Symbols: Characteristics: n channel p channel controlled resistor (see later the triode region of MOSFETs) no saturation saturation pinch off voltage 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

Calculation of the pinch off voltage U(x) W d geom. width of channel S width of depl. layer dh(x) 0 L x Pinch off: d geom. width = 2 x width of depletion layer 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

Problem Determine the pinch off voltage of a Si JFET, if the channel width is d = 4 m and the doping is Nd = 1015/cm3 ! 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The characteristic width of depletion layer geom. width of channel 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The characteristic width of depletion layer geom. width of channel 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The characteristic Channel conductivity 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The characteristic Current constant For the triode region! 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

The characteristic For all regions! Only in saturation: 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014

Small signal parameters, equivalent Slope / transconductance In Out Output conductance Voltage gain 27-10-2015 Microelectronics BSc course, The JFETs © András Poppe & Vladimír Székely, BME-EET 2008-2014