Deuterium retention for sample temperature of 500 K

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Presentation transcript:

Deuterium retention for sample temperature of 500 K MPT/1-1: A. Kreter et al "Influence of Plasma Impurities on the Fuel Retention in Tungsten" Exposure in linear plasma device PSI-2 Incident ion flux: ~ 1022 m-2s-1 Incident ion fluence: (0.5 - 1)1026 m-2 Sample temperatures: 500 and 770 K Incident ion energy: 70 eV (above W sputtering threshold for Ar, Ne and N, but below it for D and He) Seeded impurities (fraction): Pure D (reference), He (3%), Ar (7%), He (3%) + Ar (7%), Ne (10%), N (5%) Deuterium retention for sample temperature of 500 K 4.0 3.5 3.0 2.5 D retention [1021 D/m2] 2.0 1.5 1.0 0.5 pure D D+He D+Ar D+He+Ar D+Ne D+N Value for pure D exposure is in agreement with available database Helium reduces D retention by a factor of 3 - 10 Argon and neon increase D retention by a factor of 2 (on average) For D+He+Ar exposure, D retention is similar to pure D exposure  Ar overrides the effect of He Nitrogen increases D retention by a factor of 7 - 8