The defect is the device: (A) An atomic-resolution scanning transmission electron microscopy (STEM) image of a 109° domain wall in the multiferroic BiFeO3.

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The defect is the device: (A) An atomic-resolution scanning transmission electron microscopy (STEM) image of a 109° domain wall in the multiferroic BiFeO3 (10). The defect is the device: (A) An atomic-resolution scanning transmission electron microscopy (STEM) image of a 109° domain wall in the multiferroic BiFeO3 (10). The domain wall is identified as the red–yellow stripe and is atomically sharp. C shows a schematic of the polar distortion across this wall, while E shows the electronic conduction within the wall, which has a memristive behavior (12). (B) A STEM image of an APB in the improper ferroelectric YMnO3 (11) that also serves as a 180° domain wall; the antiphase nature of the distortion is shown in D. F shows the electronic transport within such a wall in the related improper ferroelectric, ErMnO3 (13). Ramamoorthy Ramesh PNAS 2018;115:38:9344-9346 ©2018 by National Academy of Sciences