Chapter 7, PN Junction 17 and 20 February 2017

Slides:

Advertisements

Similar presentations

1 Chapter 5-1. PN-junction electrostatics You will also learn about: Poisson’s Equation Built-In Potential Depletion Approximation Step-Junction Solution.

Advertisements

Chapter 6-1. PN-junction diode: I-V characteristics

ECE 663 P-N Junctions. ECE 663 So far we learned the basics of semiconductor physics, culminating in the Minority Carrier Diffusion Equation We now encounter.

© Electronics ECE 1312 Recall-Lecture 2 Introduction to Electronics Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration,

ECE 4339: Physical Principles of Solid State Devices

Integrated Circuit Devices

p – n junction barrier height,

Chapter V July 15, 2015 Junctions of Photovoltaics.

Lecture 3. Intrinsic Semiconductor When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also:n 0 p 0 = n.

Depletion Region ECE Depletion Region As electrons diffuse from the n region into the p region and holes diffuse from the p region into the n region,

Drift and Diffusion Current

ISAT 436 Micro-/Nanofabrication and Applications P-N Junction Diodes David J. Lawrence Spring 2004.

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.

Electronics The fifth and Sixth Lectures Seventh week / 12/ 1436 هـ أ / سمر السلمي.

The review of modern physics has given us a description of nature. Waves are described with a wave equation. Particles are described with particle equations.

Physics of Semiconductor Devices

CHAPTER 4: P-N JUNCTION Part I.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design.

ספרות עזר : פרופ ' אדיר בר - לב, מוליכים למחצה והתקנים אלקטרוניים, עמ ' P.A. Tipler, Modern Physics, pp Mc Kelvey, Solidstate and Semiconductor.

CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.

P – n junction Prof.Dr.Beşire GÖNÜL.  the basic element of all bipolar devices. >photodiode, light sensitive diode, >LED- ligth emitting diode, >laser.

CSE251 CSE251 Lecture 2. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.

INTRODUCTION TO SEMICONDUCTORS

Physics of Semiconductor Devices

Chapter 4 Section 1 Copyright © 2016 The McGraw-Hill Companies, Inc.

Multiple choise questions related to lecture PV2

Electronics The fifth and Sixth Lectures

Metallic Solids Metallic bond: The valence electrons are loosely bound. Free valence electrons may be shared by the lattice. The common structures for.

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

PN-junction diode: I-V characteristics

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

ECE 333 Linear Electronics

BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:

Recall-Lecture 4 Current generated due to two main factors

P-N Junctions ECE 663.

Lecture-12 P-N Junction • Fabrication of a p-n junction

CHAPTER 4: P-N JUNCTION Part 2

Chapter 5. pn Junction Electrostatics

Announcements HW1 is posted, due Tuesday 9/4

Electronics The fifth and Sixth Lectures

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

Band Theory of Electronic Structure in Solids

Depletion Region ECE 2204.

Current Flow ECE 2204.

Lecture #12 OUTLINE Metal-semiconductor contacts (cont.)

Elementary Particles (last bit); Start Review for Final

Quasi-Fermi Levels The equilibrium EF is split into the quasi-Fermi

Recall-Lecture 4 Current generated due to two main factors

ECE 333 Linear Electronics

EE130/230A Discussion 5 Peng Zheng.

Chapter 4.1 Metal-semiconductor (MS) junctions

pn Junction Diodes: I-V Characteristics

Chapter 7, PN Junction 22 and 24 February 2016

pn Junction Electrostatics

Chapter 1 – Semiconductor Devices – Part 2

PN Junction Electrostatics

pn Junction Electrostatics

Lecture 3 OUTLINE Semiconductor Basics (cont’d) PN Junction Diodes

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

Chapter 7, PN Junction 25 and 27 February 2015

UNIT-III Direct and Indirect gap materials &

QUIZ 4 SUPPORT Key Slides From Class Presentations 1 April 2015

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

PHY 752 Solid State Physics Inhomogeneous semiconductors

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

Chapter 7, PN Junction 27 February and 1 March 2019

BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:

ECE 340 Lecture 23 Current Flow in P-N diode

Notes 4 March 2013 Start Chapter 7, “pn Junction”

Presentation transcript:

Chapter 7, PN Junction 17 and 20 February 2017

Carrier Transport at the PN Junction P-type N-type P-type N-type Depletion region 2 2 2

Formation of Depletion Region Space charge region=depletion region= region depleted of charge carries (electrons or holes) Space charges: ionized acceptor atoms in the p-side and ionized donor atoms in the n- side. Space charges cannot move. 3 3 3

PN Junction Under Equilibrium Condition — band diagram Features under equilibrium condition (zero bias): The Fermi-level is flat throughout the whole junction The diffusion force is balanced by the internal E-field built by the space charges (this is why the depletion region is limited) 4 4 4

Band Bending and Built-in Potential

E-field in the Depletion Region 8 8 8

Built-in Potential Band bending: Solution for Vbi from Fermi-functions 10

Width of Depletion Region xp xn W 12 12