Low temperature: measurements plan

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Presentation transcript:

Low temperature: measurements plan Marco Bomben

Measurements goals Validate the new system by: Reproduce “old” results taken at 0 °C on irradiated edgeless pad diodes Reproduce “old” results taken at 0 °C on irradiated edgeless FEI4 test structures For edgeless pad diodes and FEI4 test structures repeat then the measurements at -20 °C Measure the CiS n-on-p irradiated diodes

1. Irradiated pad diodes A diode was irradiated with reactor neutrons (JSI, Ljubljana), ϕ = 2.5x1015 (1 MeV) neq/cm2 a) reproduce the 0 °C result; b) go to -20 °C log(C) – log(V) I – V α ~ 4.7x10-17 A/cm

2. Irradiated FEI4 test structures a) reproduce the 0 °C result; b) go to -20 °C

3. Measure the CiS n-on-p irradiated diodes a) IV & CV measurement at -20 °C IV & CV measurement at -20 °C taken at Moll’s lab Need to go to Vbias = 3000 V to observe full depletion for the largest fluence

How much time will the meas. take? CV for 1 diode: 2 seconds/bias point, 500-1500 points Hence CV meas.: 1-2 hours (including mounting/unmounting) for 1 diode 1 diode for 1. a) & b) No diodes for 2. For 3. : we have ~ 6 diodes x 3 fluences IV for diodes/test structures: a factor of 4 faster Shorter time for each bias point

Plan Start: Thursday, 5 March Measurements days: Thursday, Friday Break: Week of 23/3 -> DESY testbeam Proposed plan 5-6/3: restart of the probe-station, test on chiller 12-13/3: 1. a) 19-20/3: 1. b) 2/4: 2. a) 16/4: 2. b) 9/4 -> teaching

Plan Start: Thursday, 5 March Measurements days: Thursday, Friday Break: Week of 23/3 -> DESY testbeam Proposed plan 5-6/3: restart of the probe-station, test on chiller 12-13/3: 1. a) 19-20/3: 1. b) 2/4: 2. a) 16/4: 2. b) For CiS n-on-p: once we are confident in the new setup we can proceed with the CiS diodes 9/4 -> teaching