Induction Heating & MWO Solutions Fairchild Semiconductor Aug. 2013

Why We Focus On Induction Heating? Conventional Induction heating Glass plate Great thermal efficiency 90% thermal efficiency Induction cookers offer the highest efficiency around 90% while traditional halogen, electrical heating, and gas offer only 58%, 47%, and 40% respectively Flameless cooking Safety : no open flames no concerns about gas explosion Easy to clean Induction Halogen Electric Gas 90% 58% 47% 40% Radio unit : 20W/port Rapid heating system Greater heat consistency Precise heat control

System Trend <2.3kW <2kW <3.5kW Applications Topologies Features Table-top SE Inverter Only 1000V~1700V IGBT opportunity Low cost structure BJT drive circuit is common No needs PFC No bulk capacitor Chock coil & input cap. form a passive PFC (>95% PF) Advantages Needs only single IGBT No needs isolated gate drive circuits Simple and cheap No need high performance co-pak diode SA IGBT is prefer Disadvantages Needs high voltage components (IGBT, Capacitor & Inductor) Output power limitation : < 2.3kW Rice-jar <2.3kW Microwave oven <2kW Cook-top HB Inverter Two 600V(or 650V) IGBTs & HVIC (or opto) opportunity No needs PFC No bulk capacitor Chock coil & input cap. form a passive PFC (>95% PF) Advantages Prefer to over 2.3kW Better efficiency Lower working voltage (600V or 650V IGBTs) Disadvantages : Expensive Needs 2 IGBTs & many resonant capacitors Higher resonant current : thicker wire diameter and device ratings Needs isolated gate drive circuit (HVIC or Opto) Needs high performance co-pak diode Radio unit : 20W/port <3.5kW

FCS IGBT Technical Trend Emitter Emitter Emitter Emitter Emitter Gate Gate Gate Gate Gate n+ n+ p++ n+ p++ n+ p++ n+ p - base p - base p - base p - base p - base n - n - n - n - n - n (Field stop layer) n (Field stop layer) p- p- n Buffer layer Collector Collector Collector p- Field stop Trench IGBT Field stop Shorted Anode Trench IGBT p- p- Collector Collector NPT Trench IGBT Collector NPT Planar IGBT  Increase current density Reduce the epi thickness Embedded the FS layer Embedded PT Planar IGBT Benefits of NPT over PT No Epi wafer No Lifetime Control Process  Simpler Process Positive Temp Coefficient  Thermal Stability & Easy parallel operation Ruggedness  Large SOA (Safe Operating Area) Benefits of Field Stop over NPT Buffer layer terminates electric field in a shorter distance  enables reduced die thickness Reduced die thickness  Reduced Vce(sat) for the same Eoff Buffer layer improves minority carrier recombination Reduced Eoff due to reduced tail current Benefits of Trench IGBT over Planar IGBT High current density Increase current rating of module with smaller chip Benefits of Shorted Anode IGBT over Field Stop IGBT Diode embedded(Induction Heating Application) : IGBT + Diode (2 chips)  only IGBT (1 chip)

Vertical Structure Comparison FS-IGBT vs. FA-SA IGBT Field Stop IGBT Shorted Anode IGBT p - base n - Collector p++ n+ Emitter n (Field stop layer) p- Gate n - n+ Emitter p- n Collector Gate n (Field stop layer) p - base p++ Embedded Diode

What’s Shorted Anode IGBT? SA FS IGBT has the merged N/P collectors inside  doesn’t require a separate diode N+ collector P+ collector Field stop layer G a t e N+ P+ N drift JFET Key Process Backside double imp with a photo mask on thin WF High rate of anode activation  Laser annealing process indispensable (low thermal budget annealing) Backside Anode Pattern N P

What’s Shorted Anode IGBT? Conventional FS IGBT Doesn’t include the intrinsic body diode due to its p-, n-, n, p+ structure. Should be packaged together with an additional FRD for its most applications. FS SA IGBT Inserting the n+ collector in the p+ collector layer. The n+ collector directly contacts to the field stop layer  acts as a cathode of PN diode while the p+ collector layer acts as the general collector of FS T IGBT.

Product Line Up

IH Cooker (Table-top Cooker) IGBT solution Topology component FSID Description PKG Remark Single Ended Resonant Inverter IGBT　 FGA15S125P 1250V / 15A FS2 SA Trench IGBT TO3PN FGA20S125P 1250V / 20A FS2 SA Trench IGBT FGA20S140P 1400V / 20A FS2 SA Trench IGBT FGA25S125P 1250V / 25A FS2 SA Trench IGBT FGA30S120P 1300V / 30A FS2 SA Trench IGBT FGH30S130P TO247 Key Features - FS2 SA Trench IGBT offer superior conduction loss and switching performance ;  Lower Vce(sat) through thin wafer process over NPT Trench IGBT  Lower switching loss through improved minority carrier recombination of buffer layer

IH Cooktop (Large IH Cooker) IGBT/ MOSFET & Gate Driver solution Key Features - FS 2nd Gen. 600V IGBT(-SMD) which have following advantages over FS 1st Gen. (-UFD/ SFD)  20% lower Vce(sat) & Switching loss  Optimized Eon loss , enhanced Reliability to guarantee Tjmax at 175degC  FS Trench 650V IGBT: FGH40T65SPDF under developing(ER sample: P08,13) - FS2 SA Trench 1300,1400V IGBT offer superior conduction loss and switching performance ;

Rice Cooker (IH Jar) IGBT & Gate Driver solution Key Features - FS2 SA Trench IGBT offer superior conduction loss and switching performance ;  Lower Vce(sat) through thin wafer process over NPT Trench IGBT  Lower switching loss through improved minority carrier recombination of buffer layer

MWO (Microwave Oven) IGBT & Gate Driver solution Key Features Topology component FSID Description PKG Remark Single Ended Resonant Inverter IGBT FGA50S110P 1100V / 30A FS2 SA Trench IGBT TO3PN FGA20S140P 1400V / 20A FS2 SA Trench IGBT FGA30S120P 1300V / 30A FS2 SA Trench IGBT Half Bridge FGH60N60SMD 600V / 60A FS IGBT TO247 FGH40N60SMD(F) 600V / 40A FS IGBT FGH20N60SFD 600V / 20A FS IGBT Gate Driver FOD3184 Gate Drive Optocoupler, High Noise Immunity, 3A Output DIP-W SMDIP-W　 Opto FAN3111 Single 1A High-Speed, Low-Side Gate Driver SOT-23 LVIC Key Features - FS 2nd Gen. 600V IGBT(-SMD) which have following advantages over FS 1st Gen. (-UFD/ SFD)  20% lower Vce(sat) & Switching loss than 1st generation FS IGBT  Optimized Eon loss , enhanced Reliability to guarantee Tjmax at 175degC - FS2 SA Trench IGBT offer superior conduction loss and switching performance ;  Lower Vce(sat) through thin wafer process over NPT Trench IGBT  Lower switching loss through improved minority carrier recombination of buffer layer

Product roadmap Y2011 Y2012 Y2013 Y2014 Y2015 Y2016 FS Trench IGBT for IH & MWO Y2011 Y2012 Y2013 Y2014 Y2015 Y2016 1100V 50A FS2 SA Trench For Rice JAR & MWO IGBT 1100~1400V FS3 Trench Tech For Rice JAR, Cooker, MWO 1250V 15A & 20A FS2 SA Trench For IH cooker 1300V 30A FS2 SA Trench For Rice JAR & Cook top 1500~1700V FS3 Trench Tech 1400V 20A FS2 SA Trench For IH Cooker 650V FS Trench Gen3 ( fast switching ) For Cook top Fill Colors: (1) Green: Released (2) Blue: Under development (3) Red: TBD

Appendix Benchmark Report -FGA15S125P -FGA20S125P -FGA20S140P -FGA25S125P -FGA30S120P -FGA50S110P

Benchmark Report -FGA15S125P

Performance Benchmark Results DC data & Switching performance (Tc=25deg.C) Device VCE [V] VCE(sat) [V] VF [V] Eoff [uJ] @15A @Set(30A) FGA15S125P 1250 2.25 1.92 927 FGA15N120ANTD 1200 2.00 1.72 1403 FGA20S125P 1.80 1.60 1144

ZVS Switching Test Result @ Single-ended IH Test Set up Vin=220Vrms, 50Hz FGA15S125P Eoff = 927uJ FGA15N120ANTD Eoff = 1403uJ Vge:20V/div Vce:100V/div Ic:4A/div Eloss:100uJ/div Vge:20V/div Vce:100V/div Ic:4A/div Eloss:100uJ/div

Eoff & Vce(sat) FGA15N120ANTD FGA15S125P The total power loss of FGA15S125P is reduced about 15% than FGA15N120ANTD.

Thermal Test Test Circuit Temp. Test Temp. measurement ( LR4110E:YOKOGAWA) Power supply IH-cooker Test result : 220Vrms, 50Hz, 14min

Benchmark Report -FGA20S125P

Performance Benchmark Results DC data & Switching performance (Tc=25deg.C) Device VCE [V] VGE(th) [V] VCE(sat) [V] VF [V] Eoff [uJ] 　@20mA @20A @Set (30A) FGA20S125P 1250 6.11 1.92 1.76 1144 FGA20S120M 1200 6.05 1.57 1.65 1428 FGA25N120ANTD 6.18 1.86 2.15 1584

ZVS Switching Test Result @ Single-ended IH Test Set up FGA20S125P FGA20S120M FGA25N120ANTD Eoff:1144[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Eoff:1428[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Eoff:1584[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Time:1us/div Time:1us/div Time:1us/div 22

Thermal Test Test Condition Vin: 220VAC 60Hz, Test Circuit Temp. Test Pout : 1850W fsw : 20.7kHz Test Circuit Temp. Test FGA20S125P H / S Q Rectifier Thermal test result Test equipment Device Pin [W] Vce(sat). Avg. Temp. Avg. [℃] EMC FGA20S125P 1850W 1.92 81 FGA20S120M 1.57 82.3 FGA25N120ANTD 1.86 89.6

Pot-Detection Noise Test Results FGA20S125P “A” company VGE:10V/div IC::10A/div VGE:10V/div IC::10A/div “B” company “C” company VGE:10V/div IC::10A/div VGE:10V/div IC::10A/div 24

Benchmark Report -FGA20S140P

Performance Benchmark Results DC data & Switching performance (Tc=25deg.C)

ZVS Switching Test Result @ Single-ended IH Test Set up FGA20S140P “A” company Eoff:708[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Eoff:800[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Time:500ns/div Time:500ns/div 27

Thermal Test Test Condition Vin: 220VAC 60Hz, Test Circuit Temp. Test Pout : 1850W fsw : 20.7kHz Test Circuit Temp. Test FGA20S140P H / S Q Rectifier Thermal test result Test equipment Device Pin [W] No. Vce(sat) Temp. [℃] EMC H / S FGA20S140P 1850W #01 1.910 76.4 53.8 #02 78 54.3 #03 1.915 76.2 52.8 #04 1.930 80 #05 1.955 78.8 53.9 Avg 1.924 77.9 “A” Company 1.570 75.3 53.4 77.2 54.1 75.2 53 76.6 53.1 1.560 75.6 1.568 76.0 53.3

Pot-Detection Noise Test Results “A” company FGA20S140P Vge:10V/div Vce:200V/div Ic:10A/div Vge:10V/div Vce:200V/div Ic:10A/div 500ns/div No pot detection noise No pot detection noise 29

Capacitor Surge Test Test Circuit + Vinput _ IH Cooker C1 20~25uF S1 Iinput To verify the stability of IGBT when other HAs are plugged or un-plugged to AC grid - New IGBT(FGA20S140P) was not damaged despite frequent switch on/off.

Benchmark Report -FGA25S125P

Performance Benchmark Results DC data & Switching performance (Tc=25deg.C)

ZVS Switching Test Result @ Single-ended IH Test Set up FGA25S125P “A” company Eoff:875[uJ] Vge:10V/div Vce:80V/div Ic:4A/div Eoff:1095[uJ] Vge:10V/div Vce:80V/div Ic:4A/div time:1us/div time:1us/div Time:500ns/div 33

Thermal Test : Vin = 220Vac Test Circuit Test Board Temp. measurement ( LR4110E:YOKOGAWA) Rectifier IGBT Test result : 50Hz, 7min Power supply FT-2101 * Steamer mode * Kettle mode Device Pin [W] No. Vce(sat) @rated current Temp. [℃] EMC FGA25S125P 1270 #01 1.780 53.2 #02 1.770 53.4 Avg 1.775 53.3 ‘A’ Company 1.495 50.2 1.505 50.6 50.4 Device Pin [W] No. Vce(sat) @rated current Temp. [℃] EMC FGA25S125P 1870 #01 1.780 71.2 #02 1.770 71.5 Avg 1.775 71.4 ‘A’ Company 1.495 68.7 1.505 69.2 69.0

Thermal Test : Vin = 250Vac Test Circuit Test Board Temp. measurement ( LR4110E:YOKOGAWA) Rectifier IGBT Test result : 50Hz, 7min Power supply FT-2101 * Steamer mode * Kettle mode Device Pin [W] No. Vce(sat) @rated current Temp. [℃] EMC FGA25S125P 1580 #01 1.780 58 #02 1.770 58.2 Avg 1.775 58.1 ‘A’ Company 1.495 56.5 1.505 56.9 56.7 Device Pin [W] No. Vce(sat) @rated current Temp. [℃] EMC FGA25S125P 1680 #01 1.780 60.3 #02 1.770 60.9 Avg 1.775 60.6 ‘A’ Company 1.495 59.7 1.505 59.3 59.5

Pot-Detection Noise Test Results FGA25S125P “A” company Vge:10V/div Vce:100V/div Vge:10V/div Vce:100V/div No pot detection noise No pot detection noise 36

Capacitor Surge Test Cap surge test Test condition Test result - Applied input voltage : 180Vac, 220Vac, 250Vac (50Hz) - Capacitor : 20uF, 30uF - On/Off time interval of Relay(S1) : 3s, 10s - Test time : 60min + Vinput _ IH Cooker C1 20~25uF S1 Iinput Test result test result #01 #02 #03 #04 #05 #06 #07 #08 #09 #10 FGA25S125P pass pass　 To verify the stability of IGBT when other HAs are plugged or un-plugged to AC grid - New IGBT(FGA25S125P) was not damaged despite frequent switch on/off. 37

Benchmark Report -FGA30S120P

Performance Benchmark Results DC data & Switching performance(Tc=25deg.C)

ZVS Switching Test Result @ Single-ended IH Test Set up FGA30S120P FGA30N120FTD “A” company Vge:10V/div Eoff:732[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Eoff:624[uJ] Vge:10V/div Vce:200V/div Ic:5A/div Eoff:612[uJ] Vce:200V/div * Test condition : Ic=30A, Vge=15.0V, Tc=25deg.C 40

Thermal Test Single-ended IH Test Set up Temp.@EMC IH Cooker Zig Pin=1800W Device T_Ambient T_H/S T_EMC [deg.C] FGA30S120P 38.3　 59.9 77.9　 FGA30N120FTD 38.8　 60.5 79.5　 “A” company 38.1 58.4 75 * Test condition : AC220V / 60Hz, 1800W 10min.

Benchmark Report -FGA50S110P

Performance Benchmark Results DC data & Switching performance (Tc=25deg.C) Device BVCE [V] VGE(th) [V] VCE(sat) [V] VF [V] Eoff [uJ] @20mA @30A @50A @30A (MWO) (fsw : 42.7kHz) @30A (IH Jar) (fsw : 31kHz) FGA50S110P 1120 5.6 1.80 2.16 1.98 312 266 “T” Company 1080 4.0 1.52 1.76 352 302 “I” Company 1230 6.1 1.55 1.91 1.53 324 260 FGA50N100BNTD 1164 1.81 1.57 472 398

Thermal Performance Evaluation I MWO mode Spec. Vin : 110V Pin : 850W fsw : 43kHz 0.2uF 1uF Devices fs[kHz] Pin [W] Eoff[uJ] EMC[°C] FGA50S110P 42.7 825 312 72.8 “T” Company 840 352 77.9 “I” Company 831 324 74.9 FGA50N100BNTD 834 472 82.8 * Test was implemented with an experimental set-up

Eoff Comparison FGA50S110P “T” Company “I” Company FGA50N100BNTD Vge:10V/div Vge:10V/div Ic:6A/div Eoff:312[uJ] Ic:6A/div Eoff:352[uJ] Vce:90V/div Vce:90V/div “I” Company FGA50N100BNTD Vge:10V/div Vge:10V/div Ic:6A/div Eoff:324[uJ] Ic:6A/div Eoff:472[uJ] Vce:90V/div Vce:90V/div

Eoff Comparison FGA50S110P “T” Company “I” Company FGA50N100BNTD Vge:10V/div Vge:10V/div Ic:6A/div Eoff:266[uJ] Ic:6A/div Eoff:302[uJ] Vce:90V/div Vce:90V/div “I” Company FGA50N100BNTD Vge:10V/div Vge:10V/div Ic:6A/div Eoff:260[uJ] Ic:6A/div Eoff:398[uJ] Vce:90V/div Vce:90V/div

Pot Detection Noise Immunity Comparison FGA50S110P “T” Company “I” Company FGA50N100BNTD Vin = 130V Vin = 130V Vin = 130V Vin = 130V Vin = 150V Vin = 150V Vin = 150V Vin = 150V

Thermal Performance Evaluation IH Jar Mode Spec. Vin : 110V Pin : 1200W fsw : 30.5kHz 87.6uH/43.1uH 0.2 uF 1uF Devices fs[kHz] Pin [W] Eoff[uJ] EMC[°C] FGA50S110P 30.5 1128.2 266 70.6 “T”Company 1126.8 302 69.3 “I” Company 1124.2 260 68.2 FGA50N100BNTD 1126.5 398 86.6 * Test was implemented with an experimental set-up

Contact Information Marketing: Nick Kim nick.kim@fairchildsemi.com +82-32-680-1844 Application Engineer: Jaeeul Yeon jaeeul.yeon@fairchildsemi.com +82-32-680-2428

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