Small Signal N-Channel MOSFETs "Improved BSS138"

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Presentation transcript:

Small Signal N-Channel MOSFETs "Improved BSS138" NEW Samples Available Now! BSS138K with improved ESD protection N-Channel Logic Level Enhancement Mode Field Effect Transistor Parameters Fairchild HBM Typ >3000V Tdoff <60 ns Tdon <5 ns Trise Tfall <35 ns Rdson1 VGS = 1.8V <2.5 Ohms Rdson2 VGS = 2.5V <2.0 Ohms Rdson3 VGS = 5V <1.6 Ohms Symbol Parameter Value Unit VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage ±12 ID Continuous Drain Current 220 mA TJ Operating Junction Temperature -55 to 150 oC Features : Low On- Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM = 2000V as per JEDEC A114A; ESD CDM = 2000V as per JEDEC C101C Applications : Portable Devices - Mobile Phones, PDA etc DC- DC Converter Solid-State Relays Low Side Load Switch