Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Slides:

Advertisements

Similar presentations

Introduction to MOSFETs

Advertisements

Transistors (MOSFETs)

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Digital Integrated Circuits A Design Perspective

VLSI design Lecture 1: MOS Transistor Theory. CMOS VLSI Design3: CMOS Transistor TheorySlide 2 Outline  Introduction  MOS Capacitor  nMOS I-V Characteristics.

© Digital Integrated Circuits 2nd Devices VLSI Devices  Intuitive understanding of device operation  Fundamental analytic models  Manual Models  Spice.

ECE 342 Electronic Circuits 2. MOS Transistors

EE213 VLSI Design S Daniels Channel Current = Rate of Flow of Charge I ds = Q/τ sd Derive transit time τ sd τ sd = channel length (L) / carrier velocity.

NOTICES Project proposal due now Format is on schedule page

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.

1 Chapter 5. Metal Oxide Silicon Field-Effect Transistors (MOSFETs)

EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507.

Device models Mohammad Sharifkhani.

Digital Integrated Circuits A Design Perspective

The MOS Transistor Polysilicon Aluminum. The NMOS Transistor Cross Section n areas have been doped with donor ions (arsenic) of concentration N D - electrons.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

Transistors (MOSFETs)

EE 466/586 VLSI Design Partha Pande School of EECS Washington State University

CMOS VLSI Design 4th Ed. EEL 6167: VLSI Design Wujie Wen, Assistant Professor Department of ECE Lecture 3A: CMOs Transistor Theory Slides adapted from.

1 MOS Field-Effect Transistors (MOSFETs). Copyright  2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Figure.

1 Models for Hand Analysis NMOS Transistor PMOS Transistor V DSN  V GSN -V TN V DSN  V GSN -V TN V DSP  V GSP -V TP V DSP  V GSP -V TP K N =(W/L)K’

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

The Devices: MOS Transistor

Digital Integrated Circuits A Design Perspective

Chapter 6 The Field Effect Transistor

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Chapter 3 Fabrication, Layout, and Simulation.

Chapter 2 MOS Transistors.

MOS Field-Effect Transistors (MOSFETs)

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Recall Last Lecture Common collector Voltage gain and Current gain

DMT 241 – Introduction to IC Layout

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

3: CMOS Transistor Theory

6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.

CMOS Inverter First Glance

Field effect Transistors: Operation, Circuit, Models, and Applications

EE141 Chapter 3 VLSI Design The Devices March 28, 2003.

Modeling Rp B R1 CL A R2 Cint

PowerPoint Presentations

VLSI System Design Lect. 2.1 CMOS Transistor Theory

ترانزیستور MOSFET دکتر سعید شیری فصل چهارم از:

منبع: & کتابMICROELECTRONIC CIRCUITS 5/e Sedra/Smith

Transistors (MOSFETs)

Qualitative Discussion of MOS Transistors

VLSI Design CMOS Transistor Theory

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

EMT 182 Analog Electronics I

Device EE4271 VLSI Design Dr. Shiyan Hu Office: EERC 731

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Lecture 3: CMOS Transistor Theory

CP-406 VLSI System Design CMOS Transistor Theory

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Lecture 3: CMOS Transistor Theory

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Lecture 3: CMOS Transistor Theory

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors

Presentation transcript:

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Chapter 2 MOS Transistors Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-1 Here is a simplified view of an n-channel MOS transistor. In simple terms, there are two operating modes for this transistor:on and off. We must use the terminals provided on the device to place it in these two possible conditions. The four terminals are the gate, drain, source, and bulk ( or body, or substrate). The schematic for the NMOS device is shown on the right. L between 350nm to 90 nm, tox < 5nm, xj between 70nm to 150nm Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-2 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-3 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-4 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-5 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. The Threshold Voltage Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. The Body Effect Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-7 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-8 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Current-Voltage Relations A good ol’ transistor 0.5 1 1.5 2 2.5 3 4 5 6 x 10 -4 V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Resistive Saturation VDS = VGS - VT Quadratic Relationship Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Transistor in Linear Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Transistor in Saturation Pinch-off Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Current-Voltage Relations Long-Channel Device Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

A model for manual analysis Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Current-Voltage Relations The Deep-Submicron Era -4 V DS (V) 0.5 1 1.5 2 2.5 x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Early Saturation Linear Relationship Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Velocity Saturation u n ( m / s ) u sat = 10 5 Constant velocity Constant mobility (slope = µ) x c = 1.5 x (V/µm) Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Perspective I D Long-channel device V = V GS DD Short-channel device V V - V V DSAT GS T DS Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. ID versus VGS 0.5 1 1.5 2 2.5 3 4 5 6 x 10 -4 V GS (V) I D (A) 0.5 1 1.5 2 2.5 x 10 -4 V GS (V) I D (A) linear quadratic quadratic Long Channel Short Channel Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. ID versus VDS 0.5 1 1.5 2 2.5 3 4 5 6 x 10 -4 V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Resistive Saturation VDS = VGS - VT -4 V DS (V) 0.5 1 1.5 2 2.5 x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Long Channel Short Channel Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

A unified model for manual analysis G B Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Simple Model versus SPICE 0.5 1 1.5 2 2.5 x 10 -4 Velocity Saturated Linear Saturated VDSAT=VGT VDS=VDSAT VDS=VGT (A) I D V (V) DS Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. A PMOS Transistor -2.5 -2 -1.5 -1 -0.5 -0.8 -0.6 -0.4 -0.2 x 10 -4 V DS (V) I D (A) VGS = -1.0V VGS = -1.5V VGS = -2.0V Assume all variables negative! VGS = -2.5V Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Transistor Model for Manual Analysis Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

The Transistor as a Switch Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

The Transistor as a Switch Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-9 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-10 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-11 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-12 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-13 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-14 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-15 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-16 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-17 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Dynamic Behavior of MOS Transistor Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. The Gate Capacitance x d L Polysilicon gate Top view Gate-bulk overlap Source n + Drain W t ox n + Cross section L Gate oxide Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-18 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-19 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-20 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure 2-21 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure P2-4 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure P2-5 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure P2-6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure P2-7 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Figure P2-8 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. TA 2-1, p. 83 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.