Thermoreflectance imaging of micro/nanoscale device self-heating Kerry Maize and Ali Shakouri, Purdue University Self-heating limits performance and lifetime for wide bandgap power devices and nanoscale electronics. Thermoreflectance imaging microscopy reveals local hotspots (> 200 nm) and transient thermal parameters (> 50 ns) critical to device optimization/breakdown. Hotspot on a high power ESD protection device migrates to different device fingers between 30 microseconds and 170 microseconds into pulse excitation. ESD pulse of 105 W•cm-2 produces 600 K temperature rise. GaN high electron mobility transistor for power RF applications (VD = 20 V) Transient thermoreflectance temperature change at critical HEMT locations NEEDS Annual Review: May 8-9, 2017