Fig. 3 Theoretical analysis of the thermalization pathways.

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Presentation transcript:

Fig. 3 Theoretical analysis of the thermalization pathways. Theoretical analysis of the thermalization pathways. (A to C) Simulated distributions of electron temperature increase (ΔTel) as the laser spot is on the graphene side (A), the junction (B), and the MoS2 side (C). The circles indicate the center positions of the incident laser. (D) Linecuts of ΔTel along the x axis normalized to the maximum ΔTel as in (A) to (C). (E) Schematics of the heat dissipations of photoinduced hot electrons when graphene is lightly doped (with the graphene Fermi level EF = 0.05 eV; top) and heavily doped (EF = 0.5 eV; bottom). (F) Normalized electron temperature at the graphene-MoS2 junction with different EF. The dashed line indicates the geometric junction. (G) Measured magnitudes of peak position offsets (|ΔXpk|) with 750-nm (filled circles) and 850-nm (open circles) laser excitations, as well as the simulated |ΔXpk| and calculated electron-lattice cooling length on the graphene side (ξ), as a function of EF. Yuxuan Lin et al. Sci Adv 2019;5:eaav1493 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).