Optically Reconfigurable Dielectrics in Ultra-Thin Transistors

Slides:



Advertisements
Similar presentations
6.1 Transistor Operation 6.2 The Junction FET
Advertisements

CONTENTS 1. History 2. FET Definition 3. FET operation
Nanoparticle Electric Propulsion for Space Exploration Phys 483 Monday, March Team 1: Perry Young, Kiyoshi Masui, Mark Hoidas, Andrew Harris.
Metal Oxide Semiconductor Field Effect Transistors
Chapter 12: Reliability and Failure Analysis Homework solutions.
High-K Dielectrics The Future of Silicon Transistors
Crystallization of Perylene Diimides for Organic Field Effect Transistors Bristee Das October 3, 2014.
Chapter 6 The Field Effect Transistor
Outline Introduction – “Is there a limit?”
Single Electron Transistor
Hybrid Nano Structure Research Lab. in Physics, Electronic Materials Research Lab in Physics,
BASIC ELECTRONICS.
1 Chapter 2 Electic-ight conversion. 2 p-n junction We insert atoms of another material (called dopants) into a semiconductor so that either a majority.
Qualitative Discussion of MOS Transistors. Big Picture ES220 (Electric Circuits) – R, L, C, transformer, op-amp ES230 (Electronics I) – Diodes – BJT –
VFET – A Transistor Structure for Amorphous semiconductors Michael Greenman, Ariel Ben-Sasson, Nir Tessler Sara and Moshe Zisapel Nano-Electronic Center,
1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.
Qualitative Discussion of MOS Transistors. Big Picture ES230 – Diodes – BJT – Op-Amps ES330 – Applications of Op-Amps – CMOS Analog applications Digital.
Limitations of Digital Computation William Trapanese Richard Wong.
Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.
Mapping Orientational Order in a Bulk Heterojunction Solar Cell with Polarization-Dependent Photoconductive Atomic Force Microscopy Alan J. Heeger, University.
Introduction to MOS Transistors Section Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.
Introduction to Spintronics
Conjugated Polyelectrolytes for Optoelectronic Applications Guillermo C. Bazan, University of California-Santa Barbara, DMR Conjugated polyelectrolytes.
Split-gate Organic Field Effect Transistors: Control over Charge Transport Alan J. Heeger, University of California-Santa Barbara, DMR Photo of.
PAIS-2001 “TRANS” Organic Transistors: design, fabrication and characterization.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.
Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,
EEE 490 Fall 2000, Dr. Thornton Hybrid Molecular MOS Transistor EEE 490 Final Presentation.
The Light Emitting Field Effect transistor (LEFET) as the route to injection lasers fabricated from luminescent semiconducting polymers Alan J. Heeger,
Magnetotransport Studies of Organic Spin Valves A. M. Goldman, University of Minnesota, DMR Graph of the resistance versus magnetic field at 100K.
Field Effect Transistor (FET)
Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.
Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH
Introduction to MOS Transistors
Literature seminar Yuna Kim.
Riphah International University, Lahore
All Nanocrystal Electronics Support: Primary NSF MRSEC DMR
Metal-Free Carbon-Based Nanomaterial Coatings Protect Silicon Photoanodes in Solar Water-Splitting NSF-MRSEC DMR Mark Hersam, and Lincoln Lauhon,
Lecture 7 DFT Applications
Other FET’s and Optoelectronic Devices
Organic Polymer and Electronics Laboratory – Professor Lynn Loo
Solution-Processed Indium Oxide Transistors: Printing Two-Dimensional Metals UMN MRSEC Award DMR# Dan Frisbie & Chris Leighton (IRG-1), University.
Lecture 19 OUTLINE The MOSFET: Structure and operation
منبع: & کتابMICROELECTRONIC CIRCUITS 5/e Sedra/Smith
Search for Superconductivity with Nanodevices
Qualitative Discussion of MOS Transistors
Paper Introduction Amrutha A.S. 19th May 2015.
MOS Capacitor Basics Metal SiO2
MOSFET POWERPOINT PRESENTATION BY:- POONAM SHARMA LECTURER ELECTRICAL
Structures and Defects at Interfaces in Organic Molecular Heterostructures Paul G. Evans, Department of Materials Science and Engineering, University of.
DOI: /adma
Kirigami Nanofluidics
Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:
EMT 182 Analog Electronics I
Paper introduction Yuna Kim
Tuning Optical Properties with DNA-Linked Gold Nanodisk Stacks
Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:
Reconfigurable 2D Materials with Neuromorphic Functionality
Thin Film Applications
Controlling Dielectric Polarization via Molecular Design
Received: May 25, 2012 Revised: August 8, 2012
Google Geek Street Fair
Probing Intermolecular Interactions with Intramolecular Resolution
Anisotropic Polarized Emission from ReS2
Ionic liquid gating of VO2 with a hBN interfacial barrier
Polyelemental Nanoparticle Libraries
Controlled Mechanical Buckling for Origami-Inspired 3D Microstructures
Processing 2D Porous Polymers into Membranes via Exfoliation
Atomic-Scale Characterization of Synthetic Two-Dimensional Materials
Brain-Like Computing with Atomically Thin Materials
Presentation transcript:

Optically Reconfigurable Dielectrics in Ultra-Thin Transistors NSF DMR-1720139 2019 IRG-1, Northwestern University MRSEC h PAE dielectric Transparent ITO/glass gate Polymer channel 365 nm  > 400 nm trans cis Charge transport in ultra-thin transistors strongly depends on the characteristics of the dielectric layer poised between the gate electrode and the current-conducting semiconductor channel. The current modulation scales with the capacitance, and therefore the inverse dielectric thickness, which is fixed in conventional devices. In this work, molecular self-assembly of highly polarizable PAE molecules was used to create reconfigurable dielectric layers whose capacitance changes with illumination. Upon ultraviolet optical illumination, the PAE molecules undergo a photoisomerization from an extended trans geometry to a compact cis geometry, which can be reversed upon illumination at longer wavelengths. The accompanying capacitance modulation provide new functions to optoelectronic devices. For example, the output of the photo-reconfigurable transistor depends on prior optical stimulation, combining the functionalities of logic and memory through the integration of new low-dimensional reconfigurable materials. For more information, please see the following publication: S. P. Senanayak, V. K. Sangwan, J. J. McMorrow, K. Everaerts, Z. Chen, A. Facchetti, M. C. Hersam, T. J. Marks, and K. S. Narayan, “Self-assembled photochromic molecular dipoles for high-performance polymer thin-film transistors,” ACS Appl. Mater. Interfaces, 10, 21492 (2018). Optical illumination penetrates an ultra-thin transistor to induce molecular reconfiguration of the thin PAE gate dielectric, thereby modulating the transistor output in a reversible manner. ACS Applied Materials & Interfaces, 10, 21492 (2018).