Making a Capacitive Accelerometer

Slides:

Advertisements

Similar presentations

Lecture 0: Introduction

Advertisements

Design and Simulation of a MEMS Piezoelectric Micropump Alarbi Elhashmi, Salah Al-Zghoul, Advisor: Prof. Xingguo Xiong Department of Biomedical Engineering,

Design and Simulation of a Novel MEMS Dual Axis Accelerometer Zijun He, Advisor: Prof. Xingguo Xiong Department of Electrical and Computer Engineering,

Assignment#01: Literature Survey on Sensors and Actuators ECE5320 Mechatronics Assignment#01: Literature Survey on Sensors and Actuators Electrostatic.

İsmail Erkin Gönenli Advisor: Zeynep Çelik-Butler Department of Electrical Engineering The University of Texas, Arlington.

MEMS Tuning-Fork Gyroscope Group 8: Amanda Bristow Travis Barton Stephen Nary.

Project #3: Design of a MEMS Vertical Actuator Jianwei Heng Alvin Tai ME128 Spring 2005.

ksjp, 7/01 MEMS Design & Fab Foundry Services: MOSIS as a model MOSIS: MOS implementation service, ISI, UCB HP Stanford Startup X MIT users Mask.

Introduction to CMOS VLSI Design Lecture 0: Introduction

Investigation of Multi-Layer Actuation Carlos R. Jimenez. California State Polytechnic University, Pomona. Electrical Engineering, Fall 2006 Faculty Mentor:

Applications: Angular Rate Sensors (cont’d)

presented by: Kimberly S. Elliot Parag Gupta Kyle Reed

A NOVE LOW-TEMPERATURE MICROCAP PACKAGING USING SU-8 BONDING Y.K. Kim, S.W. Kim, and B.K. Ju Korea,Chungju National,Chungju and University,KOREA Tranducer.

Process integration

1 Microfabrication Technologies Luiz Otávio Saraiva Ferreira LNLS

Introduction Integrated circuits: many transistors on one chip.

Top Down Method Etch Processes

Z. Feng VLSI Design 1.1 VLSI Design MOSFET Zhuo Feng.

CMOS Fabrication Details

Surface MEMS 2014 Part 1

Click mouse or hit space bar to advance slides All slides property of Cronos, all rights reserved Silicon Substrate Add nitride.

Why do we put the micro in microelectronics?. Why Micro? 1.Lower Energy and Resources for Fabrication 2.Large Arrays 3.Minimally Invasive 4.Disposable.

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

Section 2 Measuring simple harmonic motion. Amplitude, Period and Frequency.

ECE484: Digital VLSI Design Fall 2010 Lecture: IC Manufacturing

© Pearson & GNU Su-Jin Kim MEMS Manufacturing Processes MEMS Devices The MEMS(Microelectromechanical systems) devices can be made through the IC Process:

Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.

Introduction to Prototyping Using PolyMUMPs

Top Down Manufacturing

Norhayati Soin 05 KEEE 4425 WEEK 8 2/9/2005 LECTURE 10: KEEE 4425 WEEK 8 CMOS FABRICATION PROCESS.

Top Down Method Etch Processes

ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.

EE 495 Modern Navigation Systems Inertial Sensors Monday, Feb 09 EE 495 Modern Navigation Systems Slide 1 of 19.

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

EE 495 Modern Navigation Systems

CMOS VLSI Fabrication.

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

EE141 Manufacturing 1 Chapter 2 Manufacturing Process and CMOS Circuit Layout 1 st rev. : March 7, nd rev. : April 10, 2003.

EE 495 Modern Navigation Systems Inertial Sensors Wed, Feb 17 EE 495 Modern Navigation Systems Slide 1 of 18.

(Chapters 29 & 30; good to refresh 20 & 21, too)

MEMS Tuning-Fork Gyroscope Group 8: Amanda Bristow Travis Barton Stephen Nary.

Etching Chapters 11, 20, 21 (we will return to this topic in MEMS)

EE412 Deep Trench Spray Coating Final Presentation Karthik Vijayraghavan Mentor : Jason Parker 12/08/

CSE477 L05 IC Manufacturing.1Irwin&Vijay, PSU, 2003 CSE477 VLSI Digital Circuits Fall 2003 Lecture 05: IC Manufacturing Mary Jane Irwin (

CMOS VLSI Design Lecture 2: Fabrication & Layout

MOSCAP Characterization of SNF ALD

1. Introduction. Diseño de Circuitos Digitales para Comunicaciones Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration.

Solar Cell and NMOS Transistor Process EE290G Joey Greenspun.

Wisconsin Center for Applied Microelectronics

Mechanics of Micro Structures

Making a Capacitive Accelerometer

High Aspect Ratio Si Etching in STS2

Electron-beam lithography with the Raith EBPG

Electron-beam lithography with the Raith EBPG

Digital Integrated Circuits A Design Perspective

Silicon Wafer cm (5’’- 8’’) mm

Electron-beam lithography with the Raith EBPG

Lecture 9.1 Building a FET.

31/08/ GaAs and 5629 GaAs growth 5622 GaAs,

Add nitride Silicon Substrate.

Memscap - A publicly traded MEMS company

Micro-Electro-Mechanical-Systems

Ch. 12 Waves pgs

MicroElectroMechanical Systems

(2) Incorporation of IC Technology Example 18: Integration of Air-Gap-Capacitor Pressure Sensor and Digital readout (I) Structure It consists of a top.

Add nitride Silicon Substrate

RIE - Reactive Ion Etching

Presentation transcript:

Making a Capacitive Accelerometer EE147/247A Fall 2016 Week 2, Lecture 1 K. Pister

Outline Simple SOI process Simple capacitive accelerometer Performance Etching Design rules Simple capacitive accelerometer Anchor, spring, mass, capacitor Performance Spring constant, mass, frequency response Capacitance vs. acceleration

Simple SOI process Start with 20um thick SOI on 2um SiO2 spin, expose, develop, hardbake photoresist with mask STRUCT DRIE (deep reactive ion etch) silicon etch (plasma) strip photoresist 5 minute etch in 49% HF (liquid) rinse, dry

Minimum size for an anchor?

Maximum width of a free beam?

Maximum distance between etch holes in a free plate?

Design Rules: example minimum line/space: 2um etch hole size: 2um square etch hole spacing: 6um center-to-center minimum width, fixed beam: 20um max width, free beam: 8um

Design Rules Design rules are a contract between the manufacturer and the designer “obey these rules and we guarantee this level of performance” free beams will be free fixed beams will be fixed 2um lines (e.g. springs) will still be there 2um gaps (e.g. capacitors) will be cleared

Design rules, cont. Note that this does not guarantee that a 2um line will be 2um wide when it is fabbed Design rules are a good idea even when you are both the designer and the manufacturer (maybe “especially when”)

Simplest accelerometer

ST 3 axis accelerometer LIS44AHL https://memsblog.wordpress.com/2011/01/05/chipworks-2/

ST 3 axis accelerometer LIS44AHL https://memsblog.wordpress.com/2011/01/05/chipworks-2/

Possibly the ST LIS331EB? (probably not) Moving mass (with etch holes) Spring Capacitor fingers? Anchor http://www.pcbheaven.com/opendir/index.php?show=4109sg7239pu0d6729c0

MEMS racetrack and racecar Pham, Dao, Sugiyama, “A micro transportation system […] J. Micromech. Microeng. 2007 http://iopscience.iop.org/article/10.1088/0960-1317/17/10/026/pdf

Spring, mass, damper, capacitor

Spring

Mass

Capacitor