Readout Electronics for Pixel Sensors Integrating ASICs for Scintillator-coated X-ray pixel sensors. Integrating ASICs for Ion beam profiling. Pixel electronics for photon counting. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

ASICs for scintillator-coated X-ray pixel sensor Pixel sensor based on p-diffusion/n-well photodiode with in-pixel preamplifier (NIM-A) Improved optical sensitivity. Low direct X-ray absorption. Phototransistor-based pixel sensor, (IEEE ICECS’2k1) Cancellation of the dark current was achieved. Work should be done to improve the FPN. Monte Carlo simulation of imaging properties, (NSS’2000). Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

ASICs for Ion Beam Profiler A pixel array readout electronics was fabricated and tested. 10x10 array size. 520x520 um pixel size. Chip size 6.5x6.5 mm2 . Current integrating mode. A new version with improvements includes: Variable dynamic range by multiple divisions of the input current. Improved output current readout with a transistor switch. A 400 pixel array will be assembled. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group ASICs for Ion Beam Profiler Microphotograph of part of the chip showing some pixels and bonding pads Chip photograph of the ion beam ASIC Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Pixel detector for Ion Beam Profiler Sequence of images showing the ion beam moving across the graphite detector. The data was taken by the ASIC chip. A photograph of the graphite detector mounted to the flange Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Pixel Electronics for Photon Counting A new biasing method for preamplifier-shapers, (IEEE ICECS’2k). An all-analogue time-walk free SCA for photon counting pixel sensors, (WSES/IEEE CSCC’2k1) An All-digital window discriminator, (IEE Letters) Low digital interference counter for photon counting pixels. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

A new biasing method for preamplifier-shapers CMOS technology is attractive in ASICs. CSA is widely used in front-end electronics for radiation detectors. For a good noise performance Rf must be very high (Mega/Giga Ohm). MOS transistor Mf is operated in the linear or subthreshold range to reach high Rds values. A special bias for Mf is required. Mf Rf Cf Vout Iin - A Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Circuit Description Rf If A >> (Ci + Cf) /Cf Vout = - A Vin = - A . Q /(Ci + (A+1)Cf) or: Vout = - Q / Cf Cf - A Vin Vout Ci Simplified charge-sensitive amplifier (CSA) configuration. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Circuit Description Charge-sensitive preamplifier differentiation Nth order integration Amplification Rf Cf - A -A1 -A2 -An Cd Pole-zero cancellation detector General analog pulse processing channel Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Circuit Description The CSA circuit and the feedback bias scheme Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Circuit Description A block diagram of the CSA-shaper showing the mirror bias circuit Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Circuit Description A schematic diagram of the CSA-shaper showing the mirror bias circuit Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results The temperature range represent threshold variations. CSA output at - 65 oC CSA output at 25 oC The CSA output response for a charge pulse (0.1 fC) at various temperatures (- 65 oC to 25 oC). Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results Shaper output at -30 oC Shaper output at 45 oC The output shaped pulse at various temperatures (-30 oC to 45 oC) . Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results The output of the shaper’s first stage at different values of an external control current . The longer shaping time corresponds to the lower current value. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results The shaper output for different control current values showing a tuneable gain. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results Rds.Cf time constant increases for lower values of Is The CSA output for various feedback resistor values (Rds controlled by the current source Is) Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Simulation Results Shaper output for various Rds values Higher and lower Rds (CSA output) The output pulse shape is fixed regardless of the value of the feedback resistor, Rds. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

An all-analogue SCA for photon counting pixels Schematic diagram of the all-analog SCA Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

An all-analogue SCA for photon counting pixels A complete schematic diagram of the all-analog SCA Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Conclusions The scintillator-coated pixel sensor using a p-diff/n-well photosensor with an in-pixel preamplifier has the best performance (good sensitivity and low noise). The ASIC chip for ion beam profiling will be modified to allow a flexible dynamic range by employing a current gain control. A better output current readout control will be implemented. Circuit mirroring is an efficient method for achieving a stable operation of MOS transistors in the non-saturation mode by providing respectively adaptive nodes that vary in the same manner as the main circuit. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla

Sensor Technology Group Conclusions An all-analog pixel design would result in a reduced pixel size and low electronic noise. It will also result in a higher readout speed since the serial data shifting of the traditional in-pixel counter is eliminated. The implementation of an asynchronous design of the window discriminator logic will achieve an overall area-efficient photon counting pixel.. The design of a prescaled shift-counter in a photon counting pixel significantly reduces the noise caused by the switching activity of the digital part in the pixel circuit. Platform meeting June 11, 2001 - Sundsvall Sensor Technology Group Munir A. Abdalla