Fairchild Solutions for Welding Machine IPST, High Voltage, PCIA Nov. 2013

Welder System Block Diagram 1-phase and 3-Phase welding machine Inverter Part 2nd rectifier Diode - High power welding machine(Output current over 250 A) - High switching welding machine over 40 KHz(1-phase), under 40 KHz(3-phase) - PFC block option(only export model) - Using Full-bridge, Half-bridge, Phase shift full bridge topology Power Switches Diode Inverter block (one-phase) - SFD of Gen1 IGBT, SMD of Gen2 IGBT(High speed IGBT) Inverter block (three-phase) - 1000 V and 1200 V IGBT(High speed IGBT) 2nd rectifier block - Reverse Recovery Speed - Low Vf - Softness factor

Welder System Block Diagram 1-phase and 3-Phase welding machine(AP) Inverter 2nd rectifier Full-bridge topology High switching welding machine [1-phase over 40 KHz, 3-phase under 40 KHz] Optional PFC block Power Switches(Inverter) FRD(2nd. Rectifier) 1-phase: High speed IGBT 3-phase: Low Vce(sat) 1000,1200 V IGBT - Fast Trr - Low Vf - Softness factor 1-phase welding machine(EU) PFC Inverter 2nd rectifier - 2SW-forward topology - High switching welding machine over 40 KHz - IMS substrate module using D2-PAK - PFC mandatory (HA / Home line power) Power Switches(PFC / Inverter) Diode(Inverter / 2nd. Rectifier High speed IGBT Co-pak diode is not needed - Fast Trr - Low Vf - Softness factor

Welding Machine Waveform and Switching Loss @ Output Current : 320 A, Single IGBT, Full-bridge Low side Vge : 7 V/div low side Ic : 20 A/div Low side Vce : 100V/div 10 us/div High side Vge : 7 V/div Vge : 7 V/div Ic : 10 A/div Vce : 100 V/div 200ns/div Eoff=1.989 mJ Turn-off loss The biggest portion of loss Diode forward loss Turn-on loss Vge : 7 V/div Ic : 20 A/div Vce : 100 V/div 500 ns/div EVf =229 uJ Vge : 7 V/div Ic : 10 A/div Vce : 100 V/div 500 ns/div Eon=410 uJ

Fairchild IGBT Technology Field Stop IGBT Thin IGBT Wafer Features & Performance Low conduction and switching loss Positive temperature coefficient for easy parallel operation Maximum junction temperature : Tj=175degC High current capability Tight parameter distribution Large SOA (Safe Operating Area) P+ sub n- P - base n+ emitter collector gate PT x E FS Planar n WF thickness 300 um 200 um 100 um PT IGBT NPT IGBT FS IGBT P – base p++ FS Trench P-collector NPT IGBT Technology PT ; Punch-Through NPT ; Non Punch-Through FS ; Field Stop Voltage Rating Distribution by Tech.

IGBTs Ordering Information F G A 30 N 65 S M D Built-in Diode Blank : Without Diode / D : Built-in Diode Generation F/FT : Gen1 / M : Gen2 / P : Gen3 Speed & Feature S : SMPS / U : Ultrafast L : Low VCE(sat) Voltage Rating ( ⅹ10) Technology N : Planar process T : Trench process (cf. 1200 V Gen1 : N) Current Rating Package Type H : TO-247 / A : TO-3PN L : TO-264 / Y : Power247 D : D-PAK / B : D2-PAK P : TO-220 / PF : TO-220F IGBT Fairchild Semiconductor

Package Update : TO247 Long Leads Requirement: 20 mm lead length The difference between existing TO247 and TO247 long leads is only lead length(L) TO247; lead length(L) 16 mm TO247 long leads; lead length(L) 20 mm

600/650 V IGBT in Single Phase Welder

600/650 V Field-Stop IGBT Summary Lower Conduction Loss Lower Switching Loss FS Planar Gen. 1 IGBT UF or UFD SF or SFD Fsw : 16 – 20 kHz, VCE(SAT) = 1.9 V Low conduction loss Fsw : 20 – 60 kHz, VCE(SAT)= 2.3 V Lower switching losses FS Planar Gen. 2 IGBT SMD Fsw : 20 – 60 kHz, VCE(SAT)= 1.9 V 20% lower Vce(sat) & Switching loss than 1st generation FS IGBT Enhanced Reliability to guarantee Tjmax at 175degC FS Trench IGBT UPD Fsw : 16 – 20 kHz, VCE(SAT) = 1.65 V Short-Circuit Guaranteed (SCWT > 5 us @ 25degC) Higher Breakdown Voltage(650V) for increasing customer needs FS Trench Gen.2 IGBT SPD Fs : 20 – 60 kHz, VCE(SAT)= 1.8 V lowest Vce(sat) & Switching loss trade-off IGBT Ultra thin wafer tech. for lower Vce(sat) with high switching speed

600 V & 650 V Field Stop IGBT Line-Up -UFD: Low Vce(sat) IGBT Part No. Vces [V] Ic @100oC[A] Vce(sat) Typ. Eoff Typ. [μJ/A] PKG FGH/P20N60UFD 600 20 1.8 13 TO220 / TO247 FGH40N60UF/UFD 40 12 TO247 FGH/A60N60UFD 60 1.9 14 TO247/ TO3PN FGH75N60UF 75 18 FGH40N65UFD 650 -SFD/SMD: High Speed IGBT Part No. Vces [V] Ic @100oC[A] Vce(sat) Typ. Eoff Typ. [μJ/A] PKG FGH/B20N60SFD 600 20 2.2 8 TO247 / D2PAK FGH40N60SF/SFD 40 2.3 TO247 FGH60N60SF/SFD 60 11 FGH75N60SF 75 13 FGB40N60SM 1.9 6.5 D2PAK FGH40N60SMD FGH60N60SMD 7.5 FGY75N60SMD 10 Power247 FGA30N65SMD 650 30 TO3PN FGA40N65SMD FGA60N65SMD

650 V Field Stop Trench IGBT Line-Up -UPD: Low Vce(sat) IGBT Part No. Vces [V] Ic @100oC[A] Vce(sat) Typ. Eoff Typ. [μJ/A] PKG Sample Plan Release FGH30T65UPDT_F155* 650 30 1.65 17 TO247LL* Available Released FGH40T65UPD 40 TO247 FGH50T65UPD 50 FGH75T65UPD 75 * suffix T: full co-pak diode current -SPD: High Speed IGBT Part No. Vces [V] Ic @100oC[A] Vce(sat) Typ. Eoff Typ. [μJ/A] PKG Sample Plan Release FGH40T65SPD_F155 650 40 1.8 7.0 TO247LL* Available Released * TO247LL: TO247 long lead(20mm) 11

650 V 30 A IGBT in Single Phase Welder

Single Phase IGBT Welder (ZX7-250) Main block diagram Transformer ratio : 4.5:1 IGBT gate driver

IGBT Welding Machine Temperature Test IGBT welding machine temperature test results(single IGBT test) output 24.8 V, 120 A(IGBT current =27 A) and 26.4 V 160 A(IGBT current =35 A) test 1 2 3 5 6 4 Competitor I @24A Competitor H @30A Competitor S @45A Airflow Competitor H@30A Test condition : input voltage : 210 Vac, 60 Hz. Fsw=30 KHz, test time : 30 min. transformer ration : 4.5:1 Competitor H@40A Competitor I@48A Competitor R@40A Competitor T@50A Competitor S@45A

IGBT Welding Machine Temperature Test IGBT welding machine temperature test results(Parallel IGBT test) output 28.0 V, 200 A(Per IGBT current =23 A) Test condition : input voltage : 210 Vac, 60 Hz. Fsw=30 KHz, test time : 30 min. transformer ration : 4.5:1 8 7 6 5 1 2 3 4 9 Airflow 10 Competitor H@30A Competitor H@40A Competitor I@48A Competitor S@45A

1200/1000 V IGBT in Three Phase Welder

1000 V / 1200 V IGBT Line-Up -NPT IGBT: Robust IGBT Product ID Bvces [V] Ic @100℃ [A] Vce(sat) [V] Eoff Typ. [uJ/A] PKG Remark Code S FGL60N100BNTD 1000 42 2.5 35 TO264 hard switching / NPT Released FGL40N120AND 1200 40 2.6 27 * TO247LL: TO247 long lead(20 mm) -Filed Stop Trench IGBT: Low Vce(sat) & Low Eoff Product ID Bvces [V] Ic @100℃ [A] Vce(sat) [V] Eoff Typ. [uJ/A] PKG Sample Plan Code S FGH40T100SMD 1000 40 1.9 27 TO247 Available Released FGH40T120SMD 1200 1.8 FGH40T120SMD_F155 TO247LL* FGH25T120SMD_F155 25 FGH15T120SMD_F155 15 * SA IGBT for PFC (App. not using diode)

IGBT BOM for Three Phase Welder ZX7-250 model : FGH15T120SMD_F155 X 2pcs parallel , Full-bridge  Simulation current : 33 A, per devices current : 17 A ( *Transformer turn ratio : 7.5 : 1).  Test current : : 37.6 A, current per 1 IGBT: 18.8 A ZX7-320 model : FGH25T120SMD_F155 X 2pcs parallel , Full-bridge  Total current : 43 A, per devices current : 22 A ( *Transformer turn ratio : 7.5 : 1)  Test current : : 47.2 A, current per 1 IGBT: 23.6 A ZX7-400 model : FGH40T120SMD_F155 X 2pcs parallel , Full-bridge  Total current : 54 A, per devices current : 27 A ( *Transformer turn ratio : 7.5 : 1)  Test current : : 58.4 A, current per 1 IGBT: 29.2 A ZD11 18V ZD12 T9 2 6 9 7 10 4 G1 E1,E2 R35 4.7K R36 G2 ZD13 ZD14 R39 20 D7 R40 R41 R42 D8 R44 R43 R45 D9 R46 D10 R47 R48 C114 16uF C110 103 630V R111 10 T5 TRANSFORMER 42:5 1 5 6 4 8 C109 D56 DIODE L1 50uH D57 Q3 FGH150T120SMD C107 103 1KV R112 C106 C108 R102 5W 10k CT1 JF3250G 3 2 Q1 FGH15T120SMD R101 R E1 G3 G1 Output(-) Output(+) E3 Q2 D58 D59 D60 D61 D62 D63 Q4 S T C102 C113 70uF/700V G4 G2 E4 E2

FGH15T120SMD Performance Comparison

250 A Welder Model Temperature Test Temperature results CH1~CH2: High side IGBT CH3~CH4 : Low side IGBT CH5 : Thermal sensor CH6 : Tc 1 3 4 6 2 5 Welding machine condition : - Half-bridge, Output : 25.6 V ,140 A, test time : 30min. - Total current : 37.6 A(per devices current :18.8 A) - Switching frequency : 15 KHz(Duty ratio : 27.9%) (Turn on: 18.6 uS, Deadtime : 14.4 uS) Gate resistor value : Ron = 20 ohm Roff = 7 ohm 25.6V, 140A CH1 CH2 CH3 CH4 CH5 CH6 Average-Tc high side Low side HS Tc FGH15T120SMD 49.1 47.7 51.0 47.9 31.1 25.4 23.0 24.1 5.7 FGA25N120ANTD 61.1 58.5 59.4 55.7 32.5 34.4 32.2 7.1 Competitor H@15A 52.0 53.3 52.4 51.3 30.5 24.8 27.9 27.1

FGH25T120SMD Performance Comparison

320 A Welder Model Temperature Test Temperature results CH1~CH2: High side IGBT CH3~CH4 : Low side IGBT CH5 : Thermal sensor CH6 : Tc 1 3 4 6 2 5 Welding machine condition : - Half-bridge, Output : 27.2 V ,180 A, test time : 30 Min. - Total current : 47.2 A(per devices current :23.6 A) - Switching frequency : 15 KHz(Duty ratio : 24.3%) (Turn on: 16.2 uS, Deadtime : 17.2 uS) Gate resistor value : Ron = 20 ohm Roff = 7 ohm 27.6V, 180A CH1 CH2 CH3 CH4 CH5 CH6 Average-Tc high side Low side HS Tc FGH25T120SMD 56.7 56.6 60.1 54.4 33.6 26.2 30.5 31.1 7.4 Competitor F@40A 62.9 61.5 64.4 59.7 34.9 26.5 35.7 35.6 8.4 Competitor H@25A 63.1 61.3 62.0 60.7 34.0 7.5

FGH40T120SMD Performance Comparison

FGH40T120SMD Vce(sat) IGBT Vce(sat) comparison @Vge=15 V H series I-V characteristic @ Tc=25deg.C I-V charac teristic @ Tc=100deg.C H series H series

FGH40T120SMD Switching Loss Turn-off switching loss H series * Test condition : Vcc=600 V, Vge=+15 V, Rg=10 ohm, Inductive load, Freewheeling SIC diode. H series

320 A Welder Model Temperature Test Driver Circuit and welding machine diagram(Full-bridge topology) Picture of Welding machine Temperature Test Results CH1 : High side IGBT1 CH2 : High side IGBT2 CH3 : Low side GBT3 CH4 : Low side GBT4 CH5 : Thermal sensor CH6 : Ta H series 5 3 1 4 2 H series *Test condition  input voltage : 380 Vac 3-phase 60 Hz, test time : 30 min, Transformer ratio : 8.5:1 duty : 38%, Fsw=20 KHz Airflow 6

400A Welder Model Temperature Test Welding machine diagram(Half-bridge topology) C114 16uF C110 103 630V R111 10 T5 TRANSFORMER 42:5 1 5 6 4 8 C109 D56 DIODE L1 50uH D57 Q3 FGH40T120SMD C107 103 1KV R112 C106 C108 R102 5W 10k CT1 JF3250G 3 2 Q1 R101 R E1 G3 G1 Output(-) Output(+) E3 Q2 D58 D59 D60 D61 D62 D63 Q4 S T C102 C113 70uF/700V G4 G2 E4 E2 Welding machine Picture IGBT driver condition CH1~CH4 : High side IGBT CH5~CH8 : Low side IGBT CH9 : Tc Type A AP welder 5 1 2 6 Type B AP UPS 7 3 *Test condition  input voltage : 380 Vac 3-phase 60 Hz, test time : 30 min, Transformer ratio : 4.5:1, duty : 44%, Fsw=15 KHz 8 4 9 Airflow

400 A Welder Model Temperature Test Output load : 220 A, IGBT 2PCS-parallel (IGBT current will be the same as Full-bridge 400 A model) H series H series Output load : 300 A, IGBT 3PCS-parallel (IGBT current will be the same as Full-bridge 500 A model) H series H series

400 A Welder Model Temperature Test output load : 400 A, IGBT 4PCS-parallel(IGBT current will be the same as Full-bridge 600 A model) H series H series

FGH40T100SMD Performance Comparison (Full-bridge Inverter)

FGH40T100SMD Trade-off (Eoff vs. Vce(sat)) Trade-off comparison @ Tc=25deg.C Trade-off comparison @ Tc=125deg.C H series T series R series

FGH40T100SMD Eoff vs. Ic Eoff vs. Ic comparison @ Tc=25deg.C H series H series T series T series R series R series

Performance comparison : Detail power loss @ DC-Welding machine Po=14.4 KW(36 Vdc, 400 A) Pd by Switching Freq(per device) H series T series R series H series T series R series * Condition for calculation: - Topology: High-frequency switch for Full-bridge Inverter with Po=14.4 KW - Input voltage: 3-phase 380 V, Output current and voltage: 400 A, 36 Vdc - Transformer turn ratio : 8.5:1, IGBT : 2PCS Parallel, Duty : 0.36, Fsw:20 KHz, Tc:80℃ - Eon(total loss 10%) used in calculation is measured with co-pak diode H series T series R series

Fast Recovery Diode Ultrafast, Hyperfast, Stealth™ Diode

Diode Product Portfolio Car booster & Adopter Display (C-TV/MNT/PDP) PFC Freewheeling Market Power supply Output rectifier Key parameters Low VF ( < 1.5 V ) Fast trr ( < 100 ns ) ( < 35ns ) ( < 30 ns ) Soft recovery ( S- factor) High performance Welding/UPS IGBT module UIS rated ( < 35 ns ) UIS (1J <) Remark Under Plan UltraFast HyperFast StealthTM Diode PV inverter/ UPS

Reverse Recovery Performance @ 600 V, 8 A

300 V – 400 V FRD Tech. FSID VRRM IF (AV) VF max trr max Package Configuration (V) (ns) Ultrafast FFPF10UP30ST 300 10 1.4 45 TO220F Single FFPF10UP30S FFPF20UP30DN 1.3 Common Cathode FFPF20UP30S 20 1.5 30 FFB20UP30DN D2PAK FFA60UP30DN 55 TO3PN FFA40UP35S 350 40 1.6 53 FFH60UP40S/S3 400 60 85 TO247 Single/

600 V FRD (1) Tech. FSID VRRM IF (AV) IFSM VF max trr max IRM or IR max Package Config. (V) (A) (ns) (µA) UltraFast RURP860 600 8 100 1.5 70 TO220  Single RUR1S1560S9A 15 200 60 D2PAK RURP1560 FEP16JT 16 50 10 TO220AB  C. Cathode FEP16JTA C. Anode FEP16JTD Series RURP3060 30 325 250 RURG3060 TO247  RURG3060CC RURG5060 500 1.6 75 FFH60UP60S/S3 1.7 80 Single/ C. Cathode RURG8060 800 85 UltraFast II FFPF20UA60DN 2.3 120 TO220F FFPF10UA60ST FFA60UA60DN 180 2.2 90 TO3P  FFAF60UA60DN TO3PF  FFPF30UA60S

600 V FRD (2) Tech. FSID Package Config. Hyper Fast Hyper Fast II VRRM IF (AV) IFSM VF max trr typ IRM or IR max Package Config. (V) (A) (ns) (µA) Hyper Fast RHRP1560 600 15 200 2.1 40 100 TO220 Single RHRG1560CC 1.5 60 TO247 C. Cathode RHRP3060 30 325 45 RHRG3060 RHRG3060CC RHRG5060 50 500 250 Hyper Fast II FFP04H60S 4 33 FFPF04H60S TO220F  FFP08H60S 8 34 FFPF08H60S FFPF10H60S 10 2.5 35 FFH75H60S 75 750 2.2 StealthTM Diode ISL9K460P3 2.4 22 TO220  ISL9R460PF2 ISL9R860P2 FFPF60SA60DS 80 25 Series ISL9R860PF2 ISL9R860S3S D2PAK  ISL9R1560P2 ISL9R1560PF2 ISL9K1560G3 TO247  ISL9R1560G2 ISL9R1560S3S ISL9R3060P2 ISL9K3060G3 ISL9R3060G2 StealthTM II Diode FFP/PF04S60S 2.6 23 TO220/F FFP/PF08S60SN 3.4 FFP/PF08S60S FFP/PF/H15S60S 150 TO220/F / TO247 FFP/H30S60S 300 TO220/ TO247 Deuxpeed FFP08D60L2 3.6

1200 V FRD Tech. FSID VRRM IF (AV) IFSM VF max trr max IRM or IR max Package Config. (V) (A) (ns) (µA) Hyper Fast RHRP8120 1200 8 100 3.2 70 TO220 Single RHRP15120 15 200 75 RHRG30120 30 300 TO247 RHRP30120 3 250 RHRG75120 500 StealthTM Diode ISL9R8120S3S 3.3 44 D2PAK  ISL9R8120P2 TO220  ISL9R18120S3S 18 ISL9R18120G2 TO247  ISL9R30120G2 325

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