Probing ferroelectricity in a metal-gated WTe2 thin film sample

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Fig. 3 Probing ferroelectricity in a metal-gated WTe2 thin film sample. Probing ferroelectricity in a metal-gated WTe2 thin film sample. (A) Schematic of the experimental setup and geometry. Inset shows zoomed-in side view of the device structure. (B) Topography image of the metal (Ti/Au)–encapsulated WTe2 flake on a Si/SiO2 substrate covered with a conductive buffer layer of Ti/Au. Inset shows the profile of surface morphology along dashed white line. (C and D) Spectroscopic bias-dependent piezoresponse phase (C) and amplitude (D) hysteretic curves acquired through the top metal electrode gating the WTe2 flake. (E and F) Topography image showing zoom-in on the metal-gated WTe2 (E) and the corresponding piezoresponse phase image (F). (G) PFM phase image after application of a bias pulse of −2.5 V. Pankaj Sharma et al. Sci Adv 2019;5:eaax5080 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).