Fig. 3 Saturation velocity of BP FETs.

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Presentation transcript:

Fig. 3 Saturation velocity of BP FETs. Saturation velocity of BP FETs. (A) Drift velocity as a function of transverse electric field in the channel for the 100-nm channel length BP device at 300 and 20 K. Scatters are experimental data; solid lines are fits to and extrapolation from Eq. 4. (B) Extracted saturation velocity versus temperature at various hole densities. (C) Comparison of hole saturation velocity as a function of bandgap for different materials at room temperature. Xuefei Li et al. Sci Adv 2019;5:eaau3194 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).