Notes 4 March 2013 Start Chapter 7, “pn Junction”

Slides:

Advertisements

Similar presentations

1 Chapter 5-1. PN-junction electrostatics You will also learn about: Poisson’s Equation Built-In Potential Depletion Approximation Step-Junction Solution.

Advertisements

ECE 663 P-N Junctions. ECE 663 So far we learned the basics of semiconductor physics, culminating in the Minority Carrier Diffusion Equation We now encounter.

© Electronics ECE 1312 Recall-Lecture 2 Introduction to Electronics Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration,

ECE 4339: Physical Principles of Solid State Devices

Integrated Circuit Devices

Chapter V July 15, 2015 Junctions of Photovoltaics.

Lecture 3. Intrinsic Semiconductor When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also:n 0 p 0 = n.

Depletion Region ECE Depletion Region As electrons diffuse from the n region into the p region and holes diffuse from the p region into the n region,

Drift and Diffusion Current

ISAT 436 Micro-/Nanofabrication and Applications P-N Junction Diodes David J. Lawrence Spring 2004.

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.

Electronics The fifth and Sixth Lectures Seventh week / 12/ 1436 هـ أ / سمر السلمي.

The review of modern physics has given us a description of nature. Waves are described with a wave equation. Particles are described with particle equations.

Physics of Semiconductor Devices

CHAPTER 4: P-N JUNCTION Part I.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design.

ספרות עזר : פרופ ' אדיר בר - לב, מוליכים למחצה והתקנים אלקטרוניים, עמ ' P.A. Tipler, Modern Physics, pp Mc Kelvey, Solidstate and Semiconductor.

CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.

P – n junction Prof.Dr.Beşire GÖNÜL.  the basic element of all bipolar devices. >photodiode, light sensitive diode, >LED- ligth emitting diode, >laser.

CSE251 CSE251 Lecture 2. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.

INTRODUCTION TO SEMICONDUCTORS

Physics of Semiconductor Devices

Chapter 4 Section 1 Copyright © 2016 The McGraw-Hill Companies, Inc.

Multiple choise questions related to lecture PV2

Electronics The fifth and Sixth Lectures

Metallic Solids Metallic bond: The valence electrons are loosely bound. Free valence electrons may be shared by the lattice. The common structures for.

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

PN-junction diode: I-V characteristics

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

ECE 333 Linear Electronics

BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:

Recall-Lecture 4 Current generated due to two main factors

P-N Junctions ECE 663.

Lecture-12 P-N Junction • Fabrication of a p-n junction

CHAPTER 4: P-N JUNCTION Part 2

Chapter 5. pn Junction Electrostatics

Announcements HW1 is posted, due Tuesday 9/4

Electronics The fifth and Sixth Lectures

Recall-Lecture 3 Atomic structure of Group IV materials particularly on Silicon Intrinsic carrier concentration, ni.

Band Theory of Electronic Structure in Solids

Bipolar Junction Transistor (BJT) Chapter and 25 March 2016

Depletion Region ECE 2204.

Current Flow ECE 2204.

Lecture #12 OUTLINE Metal-semiconductor contacts (cont.)

Elementary Particles (last bit); Start Review for Final

Quasi-Fermi Levels The equilibrium EF is split into the quasi-Fermi

Recall-Lecture 4 Current generated due to two main factors

ECE 333 Linear Electronics

EE130/230A Discussion 5 Peng Zheng.

pn Junction Diodes: I-V Characteristics

Chapter 7, PN Junction 22 and 24 February 2016

pn Junction Electrostatics

Chapter 1 – Semiconductor Devices – Part 2

PN Junction Electrostatics

pn Junction Electrostatics

Lecture 3 OUTLINE Semiconductor Basics (cont’d) PN Junction Diodes

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

Chapter 7, PN Junction 25 and 27 February 2015

UNIT-III Direct and Indirect gap materials &

QUIZ 4 SUPPORT Key Slides From Class Presentations 1 April 2015

Bipolar Junction Transistor (BJT) Chapter and 17 March 2017

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

PHY 752 Solid State Physics Inhomogeneous semiconductors

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction)

Chapter 7, PN Junction 27 February and 1 March 2019

BSIC SEMICOCONDUCTOR CONCEPTS INTRINSIC SILICON:

ECE 340 Lecture 23 Current Flow in P-N diode

Chapter 7, PN Junction 17 and 20 February 2017

Bipolar Junction Transistor (BJT) Chapter and 27 March 2019

Presentation transcript:

Notes 4 March 2013 Start Chapter 7, “pn Junction”

Carrier Transport at the PN Junction P-type N-type P-type N-type Depletion region 2 2 2

Formation of Depletion Region Space charge region=depletion region= region depleted of charge carries (electrons or holes) Space charges: ionized acceptor atoms in the p-side and ionized donor atoms in the n- side. Space charges cannot move. 3 3 3

PN Junction Under Equilibrium Condition — band diagram Features under equilibrium condition (zero bias): The Fermi-level is flat throughout the whole junction The diffusion force is balanced by the internal E-field built by the space charges (this is why the depletion region is limited) 4 4 4

Band Bending and Built-in Potential

E-field in the Depletion Region 8 8 8

Built-in Potential Band bending: Solution for Vbi from Fermi-functions 10

Width of Depletion Region xp xn W 12 12