Fig. 2 Device characteristics.

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Presentation transcript:

Fig. 2 Device characteristics. Device characteristics. (A) Measured subthreshold emission spectra (T = 10 K). Two peaks separated by the AlAs reststrahlen band were observed, stemming from the emission from the lower and upper phonon-polariton branches, respectively. The low-temperature laser spectrum at 880 mA is also shown. a.u., arbitrary units. (B) Measured Raman spectrum taken from the active region in the z(x,y)z¯ geometry. (C) Room-temperature direct transmission spectrum using a room-temperature deuterated triglycine sulfate detector. (D) Light output versus current characteristic. A single threshold current (=880 mA) was observed. The inset shows the transport curve of the device. The ridge width of the device is ~30 μm, and the length was 250 μm. Keita Ohtani et al. Sci Adv 2019;5:eaau1632 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).