Fig. 5 The gate voltage dependence of IEE of the Rashba-split 2DEG between SrTiO3 and 3-UC LaAlO3. The gate voltage dependence of IEE of the Rashba-split.

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Presentation transcript:

Fig. 5 The gate voltage dependence of IEE of the Rashba-split 2DEG between SrTiO3 and 3-UC LaAlO3. The gate voltage dependence of IEE of the Rashba-split 2DEG between SrTiO3 and 3-UC LaAlO3. (A) The measured voltage on SrTiO3/3-UC LaAlO3 as a function of the magnetic field at 300 K for Vg = −20, −6, 0, 100, and 200 V. Inset: Schematic of the measurement under electric field using the SrTiO3 as the dielectric layer. (B) The gate voltage dependence of VIEE of the Rashba-split 2DEG between SrTiO3 and 3-UC LaAlO3. (C) The gate voltage dependence of 2DEG resistance between SrTiO3 and 3-UC LaAlO3. Qi Song et al. Sci Adv 2017;3:e1602312 Copyright © 2017, The Authors