MIT Microstructural Evolution in Materials 7: Ionic Defects

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MIT 3.022 Microstructural Evolution in Materials 7: Ionic Defects Juejun (JJ) Hu hujuejun@mit.edu

Defects are not always bad Gas sensor Fuel cell Defects are not always bad © safety.com By Peter Welleman © Consumer Reports © Butterfield Jewlers Turning quartz into amethyst using gamma radiation: http://hyperphysics.phy-astr.gsu.edu/hbase/minerals/amethyst.html Solid state battery The Midas touch

Site ratio conservation Charge neutrality Site ratio conservation Macroscopic electroneutrality Consider a sphere made of sodium with radius R = 1 cm. What is the energy needed to remove 0.01% of valence electrons from the sphere? The ratio of the number of regular cation sites to the number of regular anion sites remains constant MgO crystal # Mg = # O

Ionic defect types Schottky defect (vacancy) Frenkel defect (self-interstitial) C Substitutional atom B Foreign interstitial D

Kroger-Vink notation General form: M – atom type; “V ” denotes vacancy L – site in the original perfect lattice; “i ” denotes interstitial C – effective charge (or relative charge), equaling to the difference in valence between the species on the site L and the atom that occupies the site in a perfect crystal Positive effective charge Negative effective charge Neutral defect Quasi-free electron is denoted by ; hole is denoted by Square brackets denotes defect fraction, e.g.

Examples of Kroger-Vink notation Frenkel defect Schottky defect Substitutional atom Foreign interstitial

Concentration of Frenkel defects Configurational entropy Gibbs free energy Equilibrium fraction of Frenkel defects Assume that there is one interstitial per lattice site Dislodge n atoms from their sites Place the atoms into n interstitials

Equilibrium constant of defect reactions Frenkel defect formation General defect reactions e.g. DGf : Gibbs free energy of defect formation minus the configurational entropy term

Charge compensation in ionic solids List all possible defect reactions when TiO2 is doped into Al2O3 and determine the defect concentrations List all charged species List defect reactions based on charge compensation pairs Native vacancies: Foreign substitutional atom: Interstitials: Anions (except F) usually don’t form interstitials due to their large size Schottky defect

Charge compensation in ionic solids (cont’d) List defect reactions based on charge compensation pairs Frenkel defect Foreign substitution Foreign interstitial

Charge compensation in ionic solids (cont’d) Combine all equations along with the overall charge neutrality condition to solve defect concentrations 5 equations, 5 unknown variables: a unique solution set Mass conservation is taken into account through the equilibrium constants. In this example, K3 and K4 implicitly imply the amount of TiO2 added into the system. Question: is mass conservation taken into account?

Charge compensation in non-stoichiometric solids List all possible defect reactions in non-stoichiometric TiO2 and determine the defect concentrations Native vacancies: Electrons and holes: List all charged species (1) (2) (3) (4) Not all reactions are independent: (4) = (1) + 4 × (2) – (3) List defect reactions based on charge compensation pairs

Charge compensation in non-stoichiometric solids Combine all equations along with the overall charge neutrality condition to solve defect concentrations Non-degenerate semiconductors The defect concentration depends on oxygen partial pressure

Defect concentration: examples Schottky defect Frenkel defect Electron-hole pair DH (eV) MgO 6.6 CaO 6.1 LiF 2.34 LiCl 2.12 LiBr 1.8 LiI 1.3 DH (eV) CaF2 2.8 SrF2 2.3 BaF2 1.9 AgCl 1.6 AgBr 1.2 b-AgI 0.7 Eg (eV) Si 1.11 Ge 0.67 MgO 7.8 CaO 7.1 ZnO 3.2 a-TiO2 3.0 For MgO at 1,000K: Data source: http://www.tf.uni-kiel.de/matwis/amat/def_en/index.html The dominant interstitial atom type in Frenkel defects is labeled with red color At room temperature, the entropy of defect formation has much smaller contribution to Gibbs free energy than that of enthalpy

Defect concentration: examples Schottky defect Frenkel defect Electron-hole pair DH (eV) MgO 6.6 CaO 6.1 LiF 2.34 LiCl 2.12 LiBr 1.8 LiI 1.3 DH (eV) CaF2 2.8 SrF2 2.3 BaF2 1.9 AgCl 1.6 AgBr 1.2 b-AgI 0.7 Eg (eV) Si 1.11 Ge 0.67 MgO 7.8 CaO 7.1 ZnO 3.2 a-TiO2 3.0 For MgO at 1,000K:

The Brouwer approximation One charged defect of each sign dominates over all others Example: charge compensation in undoped MgO Regime 1: Regime 2: Regime 3: Regime 4: High oxygen partial pressure Low oxygen partial pressure Schottky compensation Electronic compensation Solve the charge carrier concentrations in each regime at one specific temperature

The Brouwer approximation (cont’d) Equilibrium constants High oxygen partial pressure regime:

The Brouwer approximation (cont’d) Low oxygen partial pressure regime: Schottky compensation regime (intermediate oxygen partial pressure): In the intermediate regime, the charge neutrality condition does not necessarily mean n = p

log (defect concentration) Charge neutrality and the Brouwer approximation do not hold near the boundaries between regimes: the exact solutions do not exhibit the kinks

Brouwer diagram for doped crystals Example: Al-doped stoichiometric MgO Neglect electronic carriers The primary defect in intrinsic MgO is Schottky defect Al-substitution of Mg dominates over interstitial formation Charge compensation regimes (dependent on Al concentration) Regime 1 (intrinsic): Regime 2 (extrinsic): (1) (2)

log (defect concentration) Intrinsic Extrinsic

You can “see” ionic defects: F-centers F-centers in NaCl crystal: electron trapped at an anion (halide) vacancy NaCl KCl KBr http://education.mrsec.wisc.edu/background/F_center Na Cl Top right: Figure 6.16, page 180, Materials Science Companion for Teaching General Chemistry Publisher: American Chemical Society Bottom right: http://education.mrsec.wisc.edu/background/F_center/

Q & A about g-ray irradiated table salt Is it still edible? Yes. First of all, I tried it. Tastes just like regular table salt. Secondly, irradiated salt only contains a small fraction of vacancy defects [in the order of 1017 cm-3 according to J. Appl. Phys. 31, 1688 (1960)]. Since the crystal will ionize when dissolved, these point defects don’t make a difference. Lastly, g-radiation normally does not trigger nuclear reactions [Nelson et al. “Gamma-Ray Interactions with Matter”], so we don’t need to worry about induced radioactivity. Okay, it is fun – but why do we need to care? Table salt and doped salt are useful materials for radiation dosimetry. See for example: Radiat. Meas. 46, 1856 (2011).

Site ratio conservation Understanding defect reactions Site ratio conservation Charge neutrality Equilibrium constant Kroger-Vink notation Frenkel & Schottky concentrations Doping & non-stoichiometric defects Defect concentration Brouwer approximation Brouwer diagram

List of symbols Q – electric charge C – capacitance (note the difference with C, Coulomb, unit of electric charge) e0 – vacuum permittivity (8.85 × 10-12 F/m) e – elementary charge (1.602 × 10-19 C) E – energy T – temperature k – Boltzmann constant (1.38 × 10-23 m2 kg s-2 K-1) n – number of point defects in a solid (slide 7) or free electron concentration (in the discussion of defect equilibrium)

List of symbols DSc – configurational entropy change due to formation of a point defect xf – fractional of lattice sites populated with Frenkel defects DGf – Gibbs free energy change due to formation of a Frenkel defect minus the configurational entropy contribution K – equilibrium constant of a defect reaction p – hole concentration NC / NV – effective density of states of conduction / valence band

List of symbols Eg – band gap energy N – number of atoms in a solid