Exciton Dissociation at Metal-Organic Interface and The induced Surface Loss in BHJ Solar Cells Wenchao Yang, Deli Li and Chang-Qin Wu Department of Physics, Fudan University, Shanghai, 200433, PRC The pursuit of new energy resources that is clean and renewable is always a hot topic of research. Organic solar cells attracts very much attention due to their desirable properties like inexpensive, flexible over their inorganic counterparts. Bulkhetrojunction (BHJ) solar cell emerges as the most efficient and prominent type of organic solar cells in recent years. Experiments of transient photovoltage (TPV) find that there is possibly intensive exciton dissociation occurring at the anode (metal)-organic interface, which leads to an innegligible loss of free electrons, resulting the so-called surface loss. Starting from the device model and including the exciton dynamics as well, we calculate the J-V curves in different interfacial dissociation rates, and evaluate the magnitude of the surface loss and its influence to the short circuit current, open circuit voltage and the efficiency of the device. The role of bimolecular recombination is also investigated. Conclusions & References The short circuit current decreasing slightly with increasing of interfacial dissociation rate, until saturation at very large rate or small dissociation time. The decreasing of bulk dissociation rate can lead to the decreasing of short circuit current as well, and the effect is much more obvious . The open circuit voltage dose not change with the increasing of interfacial dissociation rate in Schottky contact device, while it decreases at Ohmic Contact one, this can be seen more clearly from the plot of net photocurrent versus the applied voltage. The interfacial dissociation proportion increases with the interfacial dissociation rate, varying conversely with the short circuit current. Its saturation can be understood with the help of exciton density profile. The excitons are equivalently quenched at the interface. The bimolecular recombination can reduce the interfacial dissociation proportion at high bias voltage in Ohmic contact device. [1] C. Deibel and V. Dyakonov, Rep. Prog. Phys. 73, 096401 (2010). [2] C. Deibel, T. Strobel, and V. Dyakonov, Phys. Rev. Lett. 103, 036402 (2009). [3] T. Strobel, C. Deibel and V. Dyakonov, Phys. Rev. Lett. 105, 266602 (2010).