Small Signal N-Channel MOSFETs "Improved 2N7002"

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Presentation transcript:

Small Signal N-Channel MOSFETs "Improved 2N7002" NEW Samples Available Now! 2N7002K with improved ESD protection N-Channel Logic Level Enhancement Mode Field Effect Transistor Parameters Fairchild Vishay NXP OnSemi HBM Actual HBM >3000V 2000V 1000V MM Tdoff 25 ns 35 ns - 55.8 ns Tdon <5 ns 12.2 ns Ton 6.5 ns 10 ns Toff 44.1 ns 15 ns Trise 2.5 ns 9 ns Tfall 19.3 ns 29 ns Rdson1 1.19 2 2.8 Rdson2 1.45 4 3.8 1.33 Symbol Parameter Value Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 ID Continuous Drain Current 115 mA TJ Operating Junction Temperature -55 to 150 oC Features : Low On- Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM = 2000V as per JEDEC A114A; ESD CDM = 2000V as per JEDEC C101C Applications : Portable Devices - Mobile Phones, PDA etc DC- DC Converter Solid-State Relays Low Side Load Switch