Student Design Competition

1st 6 Inch GaN line in Europe Former Philips Semiconductor division Created in 2000 Acquired by YFEN in 2010 Over 40 years of experience in III-V semiconductors, including GaAs and InP Unique GaN Process best suited for upcoming 5G Only foundry in Europe offering complete service including Epitaxial Growth, Process Development, MMIC Design & Fabrication, Test & Product Qualification 6 Inch GaN line in Europe Confidential Property of OMMIC, may not be copied, disseminated or transferred without the expressed written approval of OMMIC © OMMIC S.A. 2019

OMMIC PROCESSES ED02AH GaAs pHEMT Process for Competition GaN D006GH Frequency of Main Applications (GHz) 10 20 30 40 50 60 70 80 90 100 110 120 130 140 GaN D006GH GaN/Si HEMT Dev Process for Competition D01GH GaN/Si HEMT High In D004IH GaAs w/ In mHEMT Dev D007IH GaAs w/ In mHEMT D01MH GaAs mHEMT D01PH GaAs pHEMT GaAs : Space Qualified process : On-going Space Qualification (2020) ED02AH GaAs pHEMT D25PHS GaAs pHEMT InP D15IB HBT Dev Confidential Property of OMMIC, may not be copied, disseminated or transferred without the expressed written approval of OMMIC © OMMIC S.A. 2019

D01GH GaN/Si fmax : 180 GHz ft : 100 GHz 100 nm Gate fmax : 180 GHz ft : 100 GHz Gate length: 100 nm Vbgd : 40 V D01GH FEATURE PW @ 30 GHz : 3.5 W/mm PAE : 48% PRELIMINARY ON-WAFER MEASUREMENTS AlGaN/GaN/Si High Linearity Mixers High frequency PA 15 GHz to 50 GHz Instrumentation wide band amplifier DC - 50 GHz Robust LNA (< 40 GHz) : up to 35dBm Pin CW for MAIN APPLICATIONS

Title: YFEN CUP Frequency: 1-40GHz Gain: 15dB(±1.5dB) P1dB: 1W PAE: 20% VSWR: 2 Size: 3*2mm*mm PAD: 1 VG 1 VD Process: D01GH( GaN on Si)

Schedule Application period : 6.22-7.12 Application information to phy@yifengelectronics: Name of the team Name of the designer, Tel number and address Name of the university and teacher YFEN will send PDK after the NDA signed

P r i z e s ¥10000 to the 1st ¥5000 to the 2nd ¥3000 to the 3rd and 4th