Fig. 4 Resistance oscillations in Nc-G film.

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Presentation transcript:

Fig. 4 Resistance oscillations in Nc-G film. Resistance oscillations in Nc-G film. (A) ΔRxx of the sample with the 1.4% N atomic concentration as a function of gate voltage taken at several constant magnetic fields and T = 1.9 K, obtained by subtracting a smooth background. The curves are shifted vertically for clarity. Inset: Typical transfer curve of nitrogen-doped graphene samples, showing pronounced oscillations near the Dirac point. (B) Color scale plot of the Rxx as a function of gate voltage and magnetic field, showing an oscillatory pattern near the Dirac point region. (C) The electrostatic potential of 6N cluster–doped graphene (red) and single N atom–doped graphene (blue). Inset: Corresponding schematics of the atomic structure of 6N cluster–doped graphene and single N atom–doped graphene. (D and E) Energy bandgap, density of states (DOS), and the partial charge distribution of valance band maximum (VBM) and conducting band minimum (CBM) of 6N cluster–doped graphene (D) and single N atom–doped graphene (E). Li Lin et al. Sci Adv 2019;5:eaaw8337 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).