Device Technology for GaN Power Electronics

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Device Technology for GaN Power Electronics HSIC Seminar Device Technology for GaN Power Electronics Time： 10:00-12:00, 19/07/2013,Fri. Location ：Millimerer-Wave ICS Lab 10F, Engineering Building Speaker ： Prof. Kevin J. Chen University of Science and Technology , Hong Kong Host ：Prof. Hsien-Chin Chiu Abstract Wide-bandgap GaN-based semiconductor materials are attracting great attention as the preferred materials for next-generation high-efficiency electric power conversion systems, owning to their superior properties including high breakdown electric-field, high carrier density, high electron saturation velocity. GaN-based power devices can be operated at high voltage and high current levels with high switching frequencies, and their inherent high-temperature operating capability could lead to simplified low-cost cooling solutions. In this talk, I would provide an update on the latest development in GaN device technology for obtaining power-electronics-relevant characteristics including normally-off operation, large positive threshold voltage, large gate swing, small Vth-instability, and low current collapse.