Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices by Jun Chen, Peng Yu, John Stenger, Moïra Hocevar,

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Presentation transcript:

Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices by Jun Chen, Peng Yu, John Stenger, Moïra Hocevar, Diana Car, Sébastien R. Plissard, Erik P. A. M. Bakkers, Tudor D. Stanescu, and Sergey M. Frolov Science Volume 3(9):e1701476 September 8, 2017 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 1 ZBP in a nanowire device controlled by gate voltages. ZBP in a nanowire device controlled by gate voltages. (A) Topological phase diagram described by Eq. 1. Dashed lines indicate settings of μ in (E), (D), and (C). (B) Scanning electron micrograph of the device used in this work. An InSb nanowire is half-covered by a superconductor NbTiN and normal metal Pd contact. The nanowire is placed on FG and BG metal gates. (C to E) Differential conductance maps in bias voltage V versus magnetic field B at three different settings of BG1. Jun Chen et al. Sci Adv 2017;3:e1701476 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 2 The emergence of the ZBP. The emergence of the ZBP. (A to I) Conductance maps in bias voltage V versus BG1 at different magnetic fields indicated in the lower right corner of each panel. The arrows in (F) mark the ZBP onset gate voltages plotted in Fig. 3. The dashed line in (H) is obtained by tracing the visible maximum in subgap conductance and flipping the resulting trace around V = 0 mV. Jun Chen et al. Sci Adv 2017;3:e1701476 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 3 Phase diagram of ZBPs. Phase diagram of ZBPs. ZBP onset points are collected from the extended data set represented in Fig. 2 (black squares) and from fig. S4 (blue circles), with error bars judged by deviation of the peak from zero bias within one-half of the full width at half maximum of ZBPs. Data extracted from fig. S4 are offset by +0.02 V in BG1 to compensate for a systematic shift due to a charge switch. The top axis EZ is calculated from the magnetic field using g = 40. The right axis μ is calculated from BG1 according to 10 meV/V (see fig. S8A in the Supplementary Materials) and set to zero at the parabolic vertex, BG1 = −0.395 V. Equation 1 is plotted in solid line using Δ = 0.25 mV. Jun Chen et al. Sci Adv 2017;3:e1701476 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 4 Tight-binding model results reveal two weakly coupled MBSs. Tight-binding model results reveal two weakly coupled MBSs. (A) Model schematics. A nanowire is contacted by a superconductor and a normal metal. The potential profile is shown as the black curve. A plane wave eikx coming from N can tunnel into the nanowire through the barrier above FG. The chemical potential above BG1, μBG1, is tunable, whereas potentials above BG2 and BG3 are fixed. The calculated wave function amplitudes for zero-energy states are shown in red and blue. (B) Conductance map taken at zero bias. The red curve corresponds to a plot of Eq. 1. (C) Conductance map in bias energy versus chemical potential at EZ = 1.7 Δ. (D) Conductance map in bias energy versus Zeeman energy splitting at μBG1 = 0 meV. In (B) to (D), thermal broadening is set to 50 μeV to match the experimental ZBP width. Jun Chen et al. Sci Adv 2017;3:e1701476 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).