Ultratransparent and stretchable graphene electrodes

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Presentation transcript:

Ultratransparent and stretchable graphene electrodes by Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, and Zhenan Bao Science Volume 3(9):e1700159 September 8, 2017 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 1 Schematic illustrations and morphological characterizations of MGGs. Schematic illustrations and morphological characterizations of MGGs. (A) Schematic illustration of the fabrication procedure for MGGs as a stretchable electrode. During the graphene transfer, backside graphene on Cu foil was broken at boundaries and defects, rolled up into arbitrary shapes, and tightly attached onto the upper films, forming nanoscrolls. The fourth cartoon depicts the stacked MGG structure. (B and C) High-resolution TEM characterizations of a monolayer MGG, focusing on the monolayer graphene (B) and the scroll (C) region, respectively. The inset of (B) is a low-magnification image showing the overall morphology of monolayer MGGs on the TEM grid. Insets of (C) are the intensity profiles taken along the rectangular boxes indicated in the image, where the distances between the atomic planes are 0.34 and 0.41 nm. (D) Carbon K-edge EEL spectrum with the characteristic graphitic π* and σ* peaks labeled. (E) Sectional AFM image of monolayer G/G scrolls with a height profile along the yellow dotted line. (F to I) Optical microscopy and AFM images of trilayer G without (F and H) and with scrolls (G and I) on 300-nm-thick SiO2/Si substrates, respectively. Representative scrolls and wrinkles were labeled to highlight their differences. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 2 Comparison of electrical and optical properties of MGGs and graphene. Comparison of electrical and optical properties of MGGs and graphene. (A) Four-probe sheet resistances versus transmittance at 550 nm for several types of graphene, where black squares denote mono-, bi-, and trilayer MGGs; red circles and blue triangles correspond with multilayer plain graphene grown on Cu and Ni from the studies of Li et al. (6) and Kim et al. (8), respectively, and subsequently transferred onto SiO2/Si or quartz; and green triangles are values for RGO at different reducing degrees from the study of Bonaccorso et al. (18). (B and C) Normalized resistance change of mono-, bi- and trilayer MGGs and G as a function of perpendicular (B) and parallel (C) strain to the direction of current flow. (D) Normalized resistance change of bilayer G (red) and MGG (black) under cyclic strain loading up to 50% perpendicular strain. (E) Normalized resistance change of trilayer G (red) and MGG (black) under cyclic strain loading up to 90% parallel strain. (F) Normalized capacitance change of mono-, bi- and trilayer G and bi- and trilayer MGGs as a function of strain. The inset is the capacitor structure, where the polymer substrate is SEBS and the polymer dielectric layer is the 2-μm-thick SEBS. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 3 Exploration of CNTs as a replacement of graphene scrolls. Exploration of CNTs as a replacement of graphene scrolls. (A to C) AFM images of three different densities of CNTs (CNT1<CNT2<CNT3) on graphene. (D) Optical transmittances of G-CNT-G on quartz. (E) Normalized resistance change of G-CNT-G as a function of strain. Transmittance and normalized resistance change of trilayer MGGs are listed as a comparison. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 4 Understanding the strain tolerance of conductivity of various graphene structures. Understanding the strain tolerance of conductivity of various graphene structures. (A to H) In situ AFM images of trilayer G/G scrolls (A to D) and trilayer G structures (E to H) on a very thin SEBS (~0.1 mm thick) elastomer at 0, 20, 60, and 100% strain. Representative cracks and scrolls are pointed with arrows. All the AFM images are in an area of 15 μm × 15 μm, using the same color scale bar as labeled. (I) Simulation geometry of patterned monolayer graphene electrodes on the SEBS substrate. (J) Simulation contour map of the maximal principal logarithmic strain in the monolayer graphene and the SEBS substrate at 20% external strain. (K) Comparison of crack area density (red column), scroll area density (yellow column), and surface roughness (blue column) for different graphene structures. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 5 Demonstration of stretchable and transparent all-carbon transistors. Demonstration of stretchable and transparent all-carbon transistors. (A) Scheme of graphene-based stretchable transistor. SWNTs, single-walled carbon nanotubes. (B) Photo of the stretchable transistors made of graphene electrodes (top) and CNT electrodes (bottom). The difference in transparency is clearly noticeable. (C and D) Transfer and output curves of the graphene-based transistor on SEBS before strain. (E and F) Transfer curves, on and off current, on/off ratio, and mobility of the graphene-based transistor at different strains. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 6 Demonstration of stretchable LED control units by all-carbon transistors. Demonstration of stretchable LED control units by all-carbon transistors. (A) Circuit of a transistor to drive LED. GND, ground. (B) Photo of the stretchable and transparent all-carbon transistor at 0% strain mounted above a green LED. (C) The all-carbon transparent and stretchable transistor used to switch the LED is being mounted above the LED at 0% (left) and ~100% strain (right). White arrows point as the yellow markers on the device to show the distance change being stretched. (D) Side view of the stretched transistor, with the LED pushed into the elastomer. Nan Liu et al. Sci Adv 2017;3:e1700159 Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).