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Copyright © Infineon Technologies AG 2019. All rights reserved. 1200 V CoolSiC™ discrete devices Nomenclature 2019-05-27 Copyright © Infineon Technologies AG 2019. All rights reserved.

CoolSiC™ MOSFET discretes W 120 R 30 M1 H Company I = Infineon R = RDS(on) As a separator between voltage and RDS(on)1 Package type W = TO-247 Z = TO-247 4pin BG = D2PAK 7pin Device M = MOSFET NEW RDS(on) [m] Reliable grade H: High gate voltage range Blank: Industrial Breakdown voltage Divided by 10 120 = 1200 V Series name (2 digits) M1 = Generation 1 1) CoolSiC™ MOSFET are marked with the typical RDS(on) instead of nominal current. 2019-08-08 restricted Copyright © Infineon Technologies AG 2019. All rights reserved. 2019-08-08 Copyright © Infineon Technologies AG 2019. All rights reserved. restricted

1200 V CoolSiC™ G5 Schottky diode X G 120 C5 (B) Company I = Infineon Package type H = TO220 R2L M = DPAK R2L W = TO247 WD = TO247 R2L K = D2PAK R2L G = Low thermal resistance Breakdown voltage [V] /10 Device D = Diode NEW NEW Series name 5 = Generation 5 Continuous forward current [A] B = Common-cathode configuration 2019-08-08 restricted Copyright © Infineon Technologies AG 2019. All rights reserved. 2019-08-08 Copyright © Infineon Technologies AG 2019. All rights reserved. restricted

Copyright © Infineon Technologies AG 2019. All rights reserved. 2019-05-27 Copyright © Infineon Technologies AG 2019. All rights reserved.

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