Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn by Jing Zhou, Xiao Wang, Yaohua Liu, Jihang Yu, Huixia.

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Presentation transcript:

Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn by Jing Zhou, Xiao Wang, Yaohua Liu, Jihang Yu, Huixia Fu, Liang Liu, Shaohai Chen, Jinyu Deng, Weinan Lin, Xinyu Shu, Herng Yau Yoong, Tao Hong, Masaaki Matsuda, Ping Yang, Stefan Adams, Binghai Yan, Xiufeng Han, and Jingsheng Chen Science Volume 5(5):eaau6696 May 10, 2019 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 1 Structure of L10-IrMn. Structure of L10-IrMn. (A) Schematic drawing of L10-IrMn unit cell. (B) XRD θ-2θ scan of IrMn along the (001) direction. Dotted lines show the reference peak positions of bulk L10-IrMn. a.u., arbitrary units. (C and D) RSMs around (113) and (103) planes, respectively. (E) HRTEM image of cross section of L10-IrMn thin film. Diffraction patterns from the substrate, interface, and IrMn are shown on the right. Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 2 Neutron diffraction θ-2θ scans along different directions. Neutron diffraction θ-2θ scans along different directions. (A) (001). (B) (110). (C) (100). (D) (−100). (E) (101). (F) (10-1). Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 3 Measurement of SOT efficiency (θDL,m) from ST-FMR. Measurement of SOT efficiency (θDL,m) from ST-FMR. (A) Schematics of measurement setup. The moment m in Py follows an elliptical precession route around the direction of H. It is influenced by two orthogonal torques τFL and τDL. Top right shows the optical image of the device and electrode (dark color). (B) Voltage spectra of L10-IrMn (22)/Py (17) measured from 8 to 12 GHz with nominal input power of 18 dBm. (C) Typical fitting of Vmix at 9 GHz. Vsym and Vasym correspond to the symmetric and antisymmetric components, respectively. (D) Fitting of Kittel equation. (E) θDL,m of L10-IrMn, p-IrMn, and Pt. The error bar describes 1 SD over at least five devices. Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 4 Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn. Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn. (A) Vmix (data point) and its fit (line) of L10-IrMn (22)/Cu (0, 0.5, 1)/Py (13) at 9 GHz. The voltage spectrum is scaled for a clearer comparison. (C) Vmix (data point) and its fit (line) of devices on L10-IrMn (22)/Py (13) at 9 GHz. The angle refers to the orientation of the microstrip in the film plane relative to the [100] direction of the L10-IrMn lattice. The insets of (A) and (C) show the extracted θDL,m. (B and D) Linear fit of linewidths against frequency for devices in (A) and (C), respectively. Inset shows the extracted damping constant (α). The plot of the 0° device is too scattered and is therefore replaced by the 67.5° device in (D). Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 5 In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres). In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres). (A) Schematic illustration of device orientation. The blue rectangle illustrates that multiple devices are patterned from the same continuous film. (B, D, and F) Normalized θDL,m at 9 GHz of p-IrMn (22)/Py (13), L10-IrMn (22)/Py (13), and L10-IrMn (22)/Cu (0.5)/Py (13), respectively. (C, E, and G) Normalized resonant fields (Hres) at 9 GHz of devices in (B), (D), and (F) respectively. The angle refers to the orientation of the microstrip in the film plane relative to the [100] direction for L10-IrMn samples and an arbitrary axis for the p-IrMn sample. Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fig. 6 Schematics of orthogonal domains in collinear AFM. Schematics of orthogonal domains in collinear AFM. (A) Twined MnF2 (110) on MgO (001) according to (35). (B) L10-IrMn (001) on KTaO3 (001) based on analysis of the magnetic anisotropy in exchange-coupled Py. The axes refer to the crystal lattice of the respective AFM film. Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).