Initial Estimates and Results of Cell Sizing

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Presentation transcript:

Initial Estimates and Results of Cell Sizing STT-RAM Project Initial Estimates and Results of Cell Sizing

Expected MTJ Parameters (Ilya/Pedram) I-STT RP ≈ 500-700Ω TMR ≈ 100-120% Lowest write energy: VWRITE ≈ 0.6-1V tPULSE ≈ 1-5ns C-STT RP ≈ 600-800Ω TMR ≈ 30-50% VWRITE ≈ 1.2-2.0V tPULSE ≈ 0.2-0.5ns

Reference SRAM Cell For IBM65: F = 0.1μm SRAM Size: 0.625μm2 = 62.5F2

STT-RAM Cell Sizing For a 2 finger device, cell area is approx: 0.61μm x (WFINGER + 0.2μm) 50F2 → 620nm/50nm x2 35F2 → 380nm/50nm x2 25F2 → 220nm/50nm x2 27.5 F2 (OLD CELLS) 52.5 F2

I-STT Results for “Balanced” Voltage VWL = 1.0V VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120% VWL = 1.2V (15-40% increase in IWRITE/VWRITE) IAP→P [μA] IP→AP [μA] 50F2 230-310 760-820 35F2 200-250 520-540 25F2 160-190 320-330 VAP→P [mV] VP→AP [mV] 50F2 300-350 410-540 35F2 250-300 270-360 25F2 190-240 160-220 IAP→P [μA] IP→AP [μA] 50F2 300-410 950-1100 35F2 260-340 690-730 25F2 210-260 430-450 VAP→P [mV] VP→AP [mV] 50F2 410-470 540-667 35F2 360-480 340-410 25F2 260-330 220-300

I-STT Results for “Balanced” Current VWL = 1.0V VDD = 1V; RP ≈ 500-700Ω; TMR ≈ 100-120% VWL = 1.2V (15-40% increase in IWRITE/VWRITE) IAP→P [μA] IP→AP [μA] 50F2 520-680 380-460 35F2 430-490 300-350 25F2 290-310 220-250 VAP→P [mV] VP→AP [mV] 50F2 680-800 230-260 35F2 490-660 175-210 25F2 310-450 120-160 IAP→P [μA] IP→AP [μA] 50F2 550-770 510-620 35F2 490-620 410-480 25F2 380-420 300-340 VAP→P [mV] VP→AP [mV] 50F2 770-850 310-360 35F2 620-750 240-290 25F2 420-580 170-210

C-STT Results for “Balanced” Voltage VWL = 1.0V VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50% VWL = 1.2V (15-40% increase in IWRITE/VWRITE) IAP→P [μA] IP→AP [μA] 50F2 270-360 740-800 35F2 230-290 510-530 25F2 180-210 315-325 VAP→P [mV] VP→AP [mV] 50F2 280-330 480-590 35F2 220-270 320-410 25F2 170-220 200-250 IAP→P [μA] IP→AP [μA] 50F2 360-480 890-1020 35F2 310-390 670-710 25F2 240-290 430-440 VAP→P [mV] VP→AP [mV] 50F2 380-440 610-710 35F2 300-370 430-540 25F2 230-290 270-340

C-STT Results for “Balanced” Current VWL = 1.0V VDD = 1V; RP ≈ 600-800Ω; TMR ≈ 30-50% VWL = 1.2V (15-40% increase in IWRITE/VWRITE) IAP→P [μA] IP→AP [μA] 50F2 610-740 350-410 35F2 470-510 290-330 25F2 300-320 210-230 VAP→P [mV] VP→AP [mV] 50F2 580-740 250-280 35F2 400-560 200-230 25F2 250-370 140-170 IAP→P [μA] IP→AP [μA] 50F2 670-900 480-560 35F2 570-670 390-440 25F2 400-430 290-320 VAP→P [mV] VP→AP [mV] 50F2 700-800 340-380 35F2 530-680 270-310 25F2 330-480 190-230