Fairchild Discrete Solutions for Lighting November, 2013 Lighting Segment, Power Conversion PCIA

In taking receipt of this Material, recipient acknowledges and agrees to maintain its confidentiality and use the Material for the sole purpose of business endeavors with Fairchild Semiconductor.  Sharing with 3rd parties is prohibited.

Discrete Solutions HV MOSFET Technology 500/600 V MOSFETs Planar MOSFETs – UniFET™ MOSFET Super-Junction MOSFETs – SuperFET® MOSFET, SupreMOS® MOSFET & SuperFET® II MOSFET Fast recovery MOSFETs – FRFET® I MOSFET & FRFET® II MOSFET and UltraFRFET™ I MOSFET & UltraFRFET™ II MOSFET 100/150 V MOSFETs Line-up of small & SMD packages Trench MOSFET – PowerTrench® MOSFET & V in TO-220/F & D2-PAK 650-1,000 V MOSFETs ; line-up 200-400 V MOSFETs ; line-up Fast Recovery Diodes ; 200/300/600 V BoostPAK for DC-DC converter

High Voltage MOSFET Technologies Fairchild has been providing both planar MOSFETs and super-junction MOSFETs AFET BFET QFET® MOSFET UniFETTM MOSFET CFET 85mohm UniFET™ II MOSFET SuperFET ® II MOSFET SuperFET® I MOSFET ● Planar ■ Super-Junction SupreMOS ® MOSFET

500 & 600 V Planar MOSFETs UniFETTM II MOSFET ; comparison of FCS’5N50 series Comparison of FCS’ 5N50 series from datasheet FQPF5N50C FDPF5N50 FDPF5N50NZ Technology CFET UNIFETTM MOSET UNIFETTM II MOSFET BVdss 500 V Id 5.0 A 4.5 A Rdson (max) 1.4 ohm 1.5 ohm Vgs(th) 2 ~ 4 V 3 ~ 5 V Qg (typ) 12 nC 11 nC 9 nC trr (typ) 263 ns 300 ns 210 ns Diode dv/dt immunity 4.5 V/ns 10 V/ns Internal ESD diode None Exist The strong point of UniFETTM II MOSFET Lower Qg  reduce switching loss Smaller trr & Irr  higher diode dv/dt immunity  Improve system reliability in bridge circuit Internal ESD diode b/w gate and source  improvement against surge voltage

500 & 600 V Planar MOSFETs UniFETTM II MOSFET benchmarking ; better gate charge Qg [nC] Qgs [nC] Qgd [nC] FDPF7N60NZ (UniFETTM II MOSFET) 14.6 2.8 5.6 FQPF8N60C (C-FET) 28.7 4.7 24.0 Company -S (1.2ohm) 17.7 5.4 4.2 1us/div FQPF8N60C FDPF7N60NZ Company - S The Qg of FDPF7N60NZ is lower than company S’ product. Switching loss makes up the largest portion in total power loss especially at light and Medium Power. In resonant applications, the body diode turns on prior to MOSFET channel. In this soft switching transition, there is no “miller effect”. Therefore, the Qg in above equation simply becomes Qg-Qgd. COMPANY CONFIDENTIAL

Test condition: Is=5A, di/dt=100A/us 500 & 600V Planar MOSFETs UniFETTM II MOSFET benchmarking ; better body diode Spec DUTs Trr[ns] at 25℃ Irr[A] at 25℃ Trr[ns] at 125℃ Irr[A] at 125℃ Test condition: Is=5A, di/dt=100A/us FDPF5N60NZ(2.0ohm) 396.4 2.2 500.0 2.9 Company - S (3.6ohm) 645.4 801.1 3.1 Company -S (2.0ohm) 672.7 3.3 842.7 3.5 Company – S (1.6ohm) 700.0 3.7 851.1 4.0 Company - S (3.6ohm) Company - S (2.0ohm) Company - S (1.6ohm) FDPF5N60NZ( 2.0ohm) 25℃ FDPF7N60NZ has better reverse recovery characteristics than company S’ product. Small reverse recovery current improves diode dv/dt immunity. COMPANY CONFIDENTIAL

500 & 600 V Planar MOSFETs UniFETTM II MOSFET benchmarking ; better switching 20 ns/div Id : 2 A/div Eoff=3.17 uJ Vds : 100 V/div FDPF7N60NZ Eoff=3.78 uJ FQPF8N60C Under Id=1 A, Vgs =15 V, Rg=10 ohm The current of UniFETTM II MOSFET falls faster than CFET during turn off operation Because of the lower Qg of UniFETTM II MOSFET  UniFETTM II MOSFET has Lower Eoff COMPANY CONFIDENTIAL

500 & 600V Planar MOSFETs UniFETTM II MOSFET advantages in LLC application Reverse Recovery Waveforms UniFETTM II MOSFET – Optimized body diode, considering LLC application . Smaller reverse recovery charge . Stronger body diode ruggedness Body Diode Ruggedness F109 : new 3p – to247과 pin to pin이 되도록 함 Table. Critical Specification Comparison of DUTs DUTs Rds(on)Max BVDss ID Qg Trr Qrr dv/dt UniFETTM II MOSFET 0.85 500 V 8 A 18 nC 160 ns 1.2 μC 10 V/ns Competitor A 7.2 A 32 nC 238 ns 2.5 μC 4.5 V/ns Competitor B 16 nC 1200 ns 10 μC -

500 & 600 V Planar MOSFETs UniFETTM II MOSFET line-up Product name Package BVDSS (V) ID (A) RDS(on) max (Ohm) Qg (nC) Samples Release Old PN being Replaced FDPF3N50NZ TO220F 500 3.0 2.50 8 Available FQPF3N50C FDD3N50NZ DPAK 2.5 FQD3N50CTM FDP/PF5N50NZ TO220/F 4.5 1.50 9 FQP/PF5N50C FDD5N50NZ 4.0 FQD5N50CTM FDP/PF8N50NZ 8.0 0.85 14 FQP/PF9N50C FDD8N50NZ 6.5 FDD6N50 FDP12N50NZ TO220 11.5 0.52 25 FQP13N50C FDPF12N50NZ FQPF13N50C FDP22N50N 22.0 0.21 49 FDPF4N60NZ 600 10 FQPF5N60C FDD4N60NZ 3.5 FQD5N60C FDP5N60NZ 2.00 11 FQP6N60C FDPF5N60NZ FQPF6N60C FDD5N60NZ FQD6N60C FDP7N60NZ 1.25 13 FQP8N60C FDPF7N60NZ FQPF8N60C FDD/U7N60NZ D/IPAK 5.5 FCD4/5N60 FDP10N60NZ 10.0 0.75 27 FQP10N60C FDPF10N60NZ FQPF10N60C FDP12N60NZ 12.0 0.65 30 FQP12N60C FDPF12N60NZ FQPF12N60C FDPF17N60NT 17.0 0.34 48 * suffix : N – UniFET II MOSFET, Z – Internal ESD Diode

SuperFET® II MOSFET Technology Feature SupreFET ® II Family 600 V/ 650 V Super-Junction technology Lower Output Capacitance (Eoss) for higher efficiency in light load conditions Higher body diode ruggedness and smaller reverse recovery charge (Qrr) for delivering better reliable system in resonant converter SupreFET ® II Family SuperFET ® II Series : Excellent Switching Performance Target for SupreMOS® MOSFET Faster switching speed can be achieve Maximize system efficiency Lower dv/dt and di/dt than SupreMOS® MOSFETs Enable PQFN88 package SuperFET ® II - Easy Driving Series : Optimizing Switching Performance Target for SuperFET® MOSFET Built-in gate resistance and optimized Cgd Easy to design due to controlled dv/dt and di/dt at high current Reliable operation at abnormal conditions - start-up, load transient and paralleled operation Fast Recovery SuperFET ® II Series Target for Fast recovery SuperFET® MOSFET / SupreMOS® MOSFET Low Qrr and Trr of body diode Higher Vth for lower switching losses in resonant topologies Robust body diode Reliable operation in resonant topologies GATE SOURCE P-PILLAR DRAIN

SuperFET® II MOSFET Product Features Design Benefits Faster switching speed and Low FOM Lower dv/dt than SupreMOS® MOSFET Maximize system efficiency for high-end applications Direct replace of SupreMOS® MOSFETs Enable PQFN88 package Enable Low profile design 650V for low RDS(on) range Better Reliability for out door applications Both Solar and SMPS higher voltage requirement Reduced Qg and Eoss Higher light load efficiency compared to SuperFET® MOSFET Lower driving requirement Wide Range of RDS(on) Cover from several kilo watt high-end power to ten’s watt adaptors

SuperFET® II MOSFET – Easy Drive Series Product Features Design Benefits Controlled di/dt @ dv/dt at high current Optimize Gate Resistor(Integrated Rg) Easy to design Reduced Gate oscillation Low EMI noise Reliable operation at abnormal conditions ; start-up, load transient, paralleled operation, etc. Reduced reverse recovery charge(Qrr) Improved body diode ruggedness - Higher dv/dt & di/dt capability Enable to use in some resonant bridge topologies Higher system reliability Reduced Qg and Eoss Higher light load efficiency compared to SuperFET® MOSFET Lower driving requirement Wide Range of RDS(on) Cover from several kilo watt high-end power to ten’s watt adaptors

SuperFET® II MOSFET for Lighting Power rating [W] 600V SJ MOS for better thermal performance Lighting evolution Super-Junction MOSFET for lighting… PFC for high power ballast – sub 1 ohm of Rdson, TO-220 or isolated at PFC stage of high power ballast over 100 W PFC or HB inverter for med power ballast – D-pak is preferred for small form factor and BOM cost PFC for high power LED driver – same as high power ballast, outdoor & street lighting Single stage PFC Flyback for med power LED driver – 800 V MOS is required to withstand voltage spike at switching Main switch for low power LED driver – 600 V in D/I-pak for high thermal performance and power efficiency inside bulb and L-tube

SuperFET® II MOSFETs – Release Plan 　Technology PRODUCT ID Package RDS(ON) Release Plan [mΩ] ES CS code S SuperFET® II FCP104N60F TO220 99 Released Series FCP190N60 199 FCPF190N60 TO220F FCMT125N60 PQFN88 Q1’14 Q2’14 FCMT199N60 P12 ’13 FCMT299N60 299 FCP380N60 380 FCPF380N60 FCPF400N60 400 FCD600N60Z DPAK 600 Released, ESD diode included FCP600N60Z FCPF600N60Z FCD620N60ZF 620 Released, ESD diode included, FR FET® FCU900N60Z IPAK Short lead 900 FCD900N60Z FCP190N60E 190 Easy Drive Series FCPF190N60E FCP260N60E 260 FCPF260N60E FCP380N60E FCPF380N60E FCD380N60E

SuperFET® II MOSFET – Bench Test A Discrete Benchmark Part # FCP380N60E FCPF11N60 Comp. I – new Comp. I - old BVDSS@ Tc=25℃ [v] 656 660 672 671 RDS(on) @ Tc=25℃ [mΩ] 363.0 372.5 384 324 Vgs(th) [V] 3.2 3.7 3.3 3.1 ESR @ f=1MHz [Ω] 5.51 2.79 7.74 1.51 Qg @ VDD=380V, ID=5A [nC] 47.9 54.1 43.6 65.7 Qgs @ VDD=380V, ID=5A 6.53 8.75 5.04 6.75 Qgd @ VDD=380V, ID=5A 11.35 14.74 13.45 15.75 Qrr @ VDD=380V, di/dt=300A/us, ID=5A [uC] 2.934 3.623 3.275 3.688 trr @ VDD=380V, [ns] 177.8 190.0 187.1 202.8

SuperFET® II MOSFET – Bench Test A Gate charge characteristics - Gate charge of FCPF380N60E is the second lowest - Condition: VDD=380 V, ID= 5 A, VGS=10 V Device Qg[nC] Qgs[nC] Qgd[nC] FCPF380N60E 47.9 6.53 11.35 FCPF11N60 54.1 8.75 14.74 Comp. I - new 43.6 5.04 13.45 Comp. I - old 65.7 6.75 15.75 [ Stored energy in output capacitance @f=1 MHz ]

SuperFET® II MOSFET – Bench Test A Reverse recovery of body diode - Qrr and Trr of FCPF380N60E are the smallest - Condition: ID= 10 A Device Qrr trr ta tb [uC] [ns] FCPF380N60E 4.950 228.8 152.2 76.6 FCPF11N60 5.942 242.6 170.4 72.2 Comp. I - new 5.399 240.9 153.8 87.1 Comp. I - old 256.6 164.9 91.7

SuperFET® II MOSFET – Bench Test A Test board: CRM PFC for high power lighting application up to 120 W Test condition : Vin=100 Vac, 60 Hz, Vout=391 V, Pout=120 W, Ron=47 Ω, Roff=6.8 Ω [ Turn-off switching losses] [ Efficiency comparison] Output Power [W] Output Power [W]

SuperFET® II MOSFET – Bench Test B AC/DC characteristics Company Fairchild COMP. S Part ID FDD5N60NZ FCD900N60Z SJ MOS No Measurement Condition Unit Planar Super-Junction DC Vth Id=250 uA V 4 3 BV 600 Rdson Vgs=10 V, Id=2 A Ω 1.90 0.9 0.95 AC Qg Vds=480 V, Vgs=10 V, f=1 MHz pF 13 13.63 11.96 Qgd 4.45 4.35 5.30 Qgs 2.65 2.45 1.80

SuperFET® II MOSFET – Bench Test B Test board : PSR for LED bulb, input = AC90 V, output = 17 W Ambient temperature : 25℃, test time : 60 min, Measured point : top of D-pak 12’C difference FDD5N60NZ, planar MOSFET on board for LED bulb originally Two Super-Junction MOSFETs under test for thermal and electrical comparison

SuperFET® II MOSFET – Bench Test B [ Efficiency comparison] [Input Voltage]

SuperFET® II MOSFET – Bench Test C Test board : L-tube for T8 replacement – SMPS integrated solution FCD900N60Z Items Name/Value Controller FL7732_F116 Topology Buck-Boost System Power 21W Output Voltage 70V Output Current 0.3A MOSFET (Rdson) FCD900N60Z 0.9Ω max. Dimensions: 284 (L)  17 (W)  10 (H) [mm] Test Results Summary - Efficiency: 90.25% ~ 92.7% - THD: 12.9% ~ 22.06% - PF: 0.95 ~ 0.99 - Startup time: 0.88 s [90 Vac] - Temperature: < 60 C°[All components] - CC deviation: ±4% [Max] - Output Current Ripple: ±17.3% Circuit schematic

SuperFET® II MOSFET – Bench Test C [ System temperature ] [ System efficiency ] Vin: 90 Vac Rectifier: 58.3C° Line filter: 54.7C° MOSFET: 55.1C° Vin: 265 Vac Rectifier: 58.4C° Input Voltage Input Power [W] Output Current [A] Output Voltage [V] Output Power [W] Efficiency 90 VAC [60 Hz] 23.03 0.290 71.56 20.78 90.23% 120 VAC [60 Hz] 23.62 0.303 71.72 21.70 91.88% 140 VAC [60 Hz] 23.78 0.306 71.71 21.97 92.40% 180 VAC [50 Hz] 23.31 71.54 21.68 92.99% 230 VAC [50 Hz] 23.08 0.300 71.42 21.43 92.83% 265 VAC [50 Hz] 0.295 71.27 21.05 92.42% Line filter: 30.9C° MOSFET: 54.7C°

SuperFET® II MOSFET – Bench Test C [ EMI ] Test Condition: LED load [70 V/300 mA] [220 Vac: Conduction Live] [110 Vac: Conduction Neutral]

SuperFET® II MOSFET – Bench Test D Test board : L-tube for T8 replacement – SMPS integrated solution [ Circuit schematic ] FCD900N60Z Dimensions: 295 (L)  18 (W)  10 (H) [mm] [ System specification] FCD900N60Z (0.82 ohm) Items Name/Value Controller FL7701 Topology PFC-Buck System Power 18.3 W Output Voltage 40 V Output Current 0.47 A Tested MOSFET (Rdson) FCD900N60Z Vs. FQD2N60C FQD2N60C (3.6 ohm) Good solution at low AC mains! [ Efficiency comparison]

Single Stage PFC Flyback converter Why 800 V MOSFET for LED Lighting? Single Stage PFC Flyback converter Input voltage Voltage stress on MOSFET follows input voltage added up with reflected output voltage plus voltage spike from resonance between leakage inductance and parasitic inductance VMOSFET(off) = Vin + NP/NS * Vo + Vvs Input voltage (Vac) Turn ratio of transformer Output voltage Voltage overshoot Ex) 265 Vac*1.414 + 3*45 V + 100 V = 610 V → 610 V + 20% margin = 760 V Trade-off between Vds and Vr

SuperFET® II MOSFET – 800 V Development Objective: cost-competitive 800 V Super-Junction MOSFET with best performance in class in line with 600/650 V SuperFET ® II MOSFETs Product Features Design Benefits Low Rdson by Super Junction tech. Make thermal design of system easier than Planar MOSFET Faster switching speed and Low FOM Maximize system efficiency by decrease of switching loss, esp. at Flyback converter SMD package line-up; D-pak Fit to small form factor; light weight of SMPS Reduced Qg and Eoss Higher light load efficiency Lower driving requirement Wide Range of RDS(on) Cover various applications and power rating

800 V SuperFET® II MOSFET Release Plan Product name Sample Available Code "S" Target Package Rdson Cross reference FCPF400N80Z (vehicle) Available Released TO-220F 0.40 SPA11N80C3(0.45), STF11NM80(0.4) FCH400N80Z Q2 '14 Q3 '14 TO-247 SPW11N80C3(0.45), STW11NM80(0.4) FCPF650N80Z Q2 ’14 0.65 SPA08N80C3(0.65)   FCPF900N80Z Q3 ’14 0.90 SPA06N80C3(0.90) , STF7NM80(1.05)  FCD900N80Z Q4 '14 DPAK SPD06N80C3(0.90) FCPF1300N80Z 1.30 SPA04N80C3(1.3), FQPF8N80C(1.55) FCD1300N80Z SPD04N80C3(1.3)   FCPF2400N80Z 2.40 SPA02N80C3(2.7), FQPF6N80C(2.5) FCD2400N80Z SPD02N80C3(2.7)   FCPF4300N80Z 4.30 FQPF3N80C(4.8) * Suffix Z: ESD diode inside ** Product proliferation after vehicle will be completed in 8inch fab

SuperFET® II MOSFET – Bench Test Test board : 45 W Single Stage PFC Flyback converter from LED down light Specification Compared parameters SuperFET® II MOSFET 1st ES Comp I’ SJ MOS FOM [RDS(ON)×QG] 14.3 Ω ·nC 25.2 Ω ·nC RDS(ON) 270.6 mΩ 236.8 mΩ VGS(th) 3 V Qg 51 nC 88 nC ESR 0.9 Ω 1.2 Ω Eoss @ 400 V 4.96 μJ 6.96 μJ Eff. (Avg.) @ 230 Vac 89.3% 89.0% Tc @45W / 230 Vac 47.9⁰C 50.8⁰C 4.96 Package TO-220

Simplified Typical Application (Phase-Shifted Full Bridge Converter) Fast Recovery MOSFETs What is FRFET® MOSFET ? FRFET® Technology Power MOSFET design technology + Lifetime control process  Fast Recovery Diode Built-in MOSFET Application Used Phase-shifted full bridge topologies (ZVS) Half / Full bridge topologies (Hard Switching) 3-phase bridge topologies Benefits of FRFET® Technology Lower trr & Qrr enable to operate high operating frequency  (over 250 KHz) Increased Ruggedness characteristics in ZVS topology  Increased Diode recovery dv/dt Enhanced EMI characteristics due to soft recovery Reduced losses in hard switching bridge topologies  Low turn-on MOSFET switching losses & Parasitic diode switching losses Simplified Typical Application (Phase-Shifted Full Bridge Converter)

Fast Recovery MOSFETs Turn-on characteristic of FRFET® MOSFET Vds Ids Turn on loss comparison This waveform shows a difference between normal MOSFET and FRFET® MOSFET at turn-on with same load condition. FRFET® MOSFET has almost half the area for power loss compared with normal MOSFET. The MOSFET with fast reverse recovery time can increase system efficiency by reducing turn-on loss. So, by using a FRFET® MOSFET instead of conventional solution (MOSFET + FRD), customer can have cost saving. Vds Normal MOSFET FRFET Ids Normal MOSFET Energy : Vds * Ids FRFET

Fast Recovery MOSFETs Trr comparison b/w FRFET® MOSFET & normal MOSFET FDPF7N50 FRFET® MOSFET FDPF7N50F UltraFRFETTM MOSFET FDPF7N50U

Fast Recovery MOSFETs Application of UltraFRFET™ MOSFET Normal MOSFET (trr > 300 ns) Driver Ultra FRFETTM with ultrafast trr FDPF6/8/10N60ZU FDPF5/7/10/12/16N50U FDPF5/8N50NZU Existing Half-Bridge Solution New Half-Bridge Solution

Fast Recovery MOSFETs FRFET® MOSFET & FRFET ® II MOSFET Line-ups Product name PKG BVDSS ID [A] RDS(ON) Max Qg [nC] trr [ns] FDP18N20F TO-220 200 18 0.145 20 80 FDPF18N20F TO-220F FDPF5N50F 500 4.5 1.55 11 65 FDD5N50F D-PAK 3.5 FQPF5N50CF 5 FDPF7N50F 6 1.15 15 85 FDD6N50F 5.5 FQPF9N50CF 9 0.85 28 100 FDPF10N50F 95 FQPF10N50CF 10 0.61 43 50 FQPF11N50CF 0.55 90 FQP11N50CF FDPF12N50F 11.5 0.7 21 134 FDB12N50F D2-PAK FQPF13N50CF 13 0.54 FDP/PF20N50F TO-220/F 0.26 154 FDA20N50F TO-3P 22 FDA24N50F 24 0.2 264 FDA28N50F 0.175 266 FQPF8N60CF 600 6.26 1.5 82 FQPF10N60CF 0.8 44 FCP11N60F 0.38 40 120 FCB20N60F 0.19 75 160 FDPF8N50NZF 7 1 14 FDD5N50NZF 3.7 1.75 FDPF5N50NZF 4.2 Suffix : N – UniFETTM II MOSFET F – FRFET® MOSFET U – UltraFRFETTM MOSFET Z – Internal ESD Diode

Fast Recovery MOSFETs UltraFRFET™ MOSFET & UltraFRFET™ II MOSFET Line-ups Product name PKG BVDSS ID [A] RDS(ON) Max Qg [nC] trr [ns] FDPF16N50U TO-220F 500 15 0.48 32 65 FDPF12N50U 10 0.8 21 FDB12N50U D2-PAK FDPF10N50U 8 1.05 18 44 FDPF7N50U 5 1.5 12.8 40 FDPF5N50U 4 2 11 36 FDD5N50U D-PAK 3 FDPF6N60ZU 600 4.5 14.5 FDPF8N60ZU 6.5 1.35 20 FDPF10N60ZU 9 31 45 FDPF8N50NZU 1.2 14 35 FDPF5N50NZU 30 * Suffix : N – UniFETTM II MOSFET F – FRFET® MOSFET U – Ultra FRFETTM MOSFET Z – Internal ESD Diode

100/150 V MOSFETs SMD Packages ** Suffix : L – Logic level gate Part Number PKG BVDSS ID [A] RDS(ON) Max Qg [nC] 10 V 4.5 V FDT3612 SOT-223 100 3.7 0.12 0.13@6 V 14 FQT7N10 1.7 0.35 - 5.8 FQT7N10L 0.38@5 V 4.6 FDD86102 DPAK 36 0.024 0.038@6 V 13.4 FDD3672 44 0.028 0.047@6 V 24 FDD3670 34 0.032 0.035@6 V 57 FDD3860 42 0.036 22 FDD3680 25 0.046 0.051@6 V 38 FDD3690 0.064 0.071@6 V 28 FDD850N10L 15.7 0.075 12.3 FQD19N10 15.6 0.1 19 FQD19N10L 0.11@5 V FDD120AN15A0 150 0.17@6 V 11.2 HUF76609D3/S D/IPAK 10 0.16 0.165 13 FQD13N10 0.18 12 FQD/U13N10L 0.2@5 V 8.7 FQD7N10L FDD2572 29 0.054 0.075@6 V 26 FDD2582 21 0.066 0.099@6 V FQD5N15 4.3 0.8 5.4 ** Suffix : L – Logic level gate

with thick oxide at the bottom 100/150 V MOSFETs PowerTrench® MOSFET; enable a drastic reduction of FOM Conventional Trench Gate MOSFET Trench MOSFET with thick oxide at the bottom The latest PowerTrench® MOSFET Higher Cell density Charge Balance technology Reduces Epi Resistance

100/150 V MOSFETs PowerTrench® MOSFET; improved efficiency Shielded Gate Trench Technology (40 V~200 V) Expanded voltage range of current Charge Balance Shielded Gate Si Technology to lower RSP and reduce FOM’s Low gate charge for a given RDS(ON) (low figure of merit) Soft reverse recovery to reduce voltage spikes in SR Applications Synchronous rectification Micro solar inverters and off line UPS systems High efficiency DC-DC converters High current DC motor drives Battery management PDU /BFU in telecom Power distribution Hot Swap stage

RDS(ON) Max (mΩ) @ VGS = 10V 100/150 V Trench MOSFETs PowerTrench® III MOSFET & V line-up in TO-220/F & D2-PAK Part Number Package BVDSS Min. (V) Technology RDS(ON) Max (mΩ) @ VGS = 10V Qg Typ. (nC) @VGS=5V ID (A) PD (W) FDT1600N10ALZ SOT-223 100 PT5 160 2.78 5.6 10.42 FDD1600N10ALZ D-PAK 6.8 14.9 FDPF680N10T TO-220F PT3 68 13 12 24 FDPF3860T 38.2 23 20 33.8 FDB3860 TO-263(D2PAK) 37 21 30 71 FDP150N10 TO-220 15 53 57 110 FDP150N10A_F102 16.2 36 91 FDB150N10 0.88 FDP120N10 66 74 170 FDB120N10 FDP100N10 10 76 75 208 FDP090N10 9 89 FDP085N10A_F102 8.5 31 188 FDPF085N10A FDD770N15A 150 77 8.6 18 56.8 FDPF770N15A 7 FDD390N15ALZ 26 63 FDPF390N15A 40 14.3 22 FDB390N15A 39 19 FDPF190N15A 17.4 33 FDB110N15A 11 47 65 234

650–1,000 V Planar MOSFETs . Product name PKG BVDSS ID [A] RDS(ON) Max Qg [nC] FQPF7N65C TO-220F 650 7 1.4 28 FDPF15N65 15 0.44 48.5 FQD2N80 DPAK 800 1.8 6.3 12 FQP3N80C TO-220 3 4.8 13 FQPF3N80C FQP6N80C 5.5 2.5 21 FQPF6N80C FQP7N80C 6.6 1.9 27 FQPF7N80C FQP8N80C 8 1.55 35 FQPF8N80C FQD2N90 D-PAK 900 1.7 7.2 FQU2N90 I-PAK FQP4N90C 4 4.2 17 FQPF4N90C FQP6N90C 6 2.3 30 FQPF6N90C FQP8N90C FQPF8N90C FQP9N90C 45 FQPF9N90C FQD2N100 1000 1.6 9 FQU2N100 .

200-400 V Planar MOSFETs SMD Packages FDU6N25 IPAK SL 250 4.4 1.1 - 4.5 * Suffix : L – Logic level gate, Z – Zener Protection ** IPAK SL : short lead type

200/250 V Planar MOSFETs TO-220/F

200/300 V Fast Recovery Diodes

600 V Fast Recovery Diodes .

BoostPak – Introduction [ Boost circuit ] [ Buck circuit ] OUTPUT Vin Vo Vin Vo + MOSFET SBD BoostPak Benefits Reduction of PCB size and system cost Better reliability with small leakage current of diode at high temperature Less assembly work

BoostPak – Construction [ Inner view ] [ External view ] 100V MOSFET N-Channel PowerTrench® MOSFET 3 1 2 4 5 150V NP diode Merit : Much lower leakage current than Schottky Diode at high temperature  Improve system reliability [ Product Line-up] Product ID BVDSS [V] R DS(on) max [mΩ] Package Po [W] ID [A] Qg [nC] Release Plan Eng. sample Release FDD850N10LD 100 75 DPAK 5lead ~ 40 W 15.7 22.2 Available Released FDD1600N10ALZD 160 ~ 25 W 6.8 2.78

Leakage current (typ.) @ VR=100V BoostPak – Diode Leakage Current Leakage current (typ.) @ VR=100V @TJ=25’C @TJ=100’C @TJ=150’C 100 V 5 A Schottky Diode 0.740 uA 146.00 uA 3300.00 uA 150 V 5 A NP Diode in BoostPak 0.003 uA 0.30 uA 4.81 uA

BoostPak – Example for LED lighting DC-DC controller BoostPAK FL6961 Light control unit (Sensor, MCU) Primary side control (FL6961) VCC regulation for output voltage regulation Primary Side Regulation without additional feedback circuit from 2ndary side - Power Factor Correction Secondary side control (Buck controller) Output Current regulation with current mode control Non Phase-Cut Dimming MCU Power : Regulator

twitter.com/fairchildSemi www.facebook.com/FairchildSemiconductor www.fairchildsemi.com/engineeringconnections