Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics by Ding Zhong, Kyle L. Seyler, Xiayu Linpeng, Ran.

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Presentation transcript:

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics by Ding Zhong, Kyle L. Seyler, Xiayu Linpeng, Ran Cheng, Nikhil Sivadas, Bevin Huang, Emma Schmidgall, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, Wang Yao, Di Xiao, Kai-Mei C. Fu, and Xiaodong Xu Science Volume 3(5):e1603113 May 31, 2017 Copyright © 2017, The Authors

Fig. 1 Ultrathin CrI3/WSe2 heterostructure and observation of spontaneous magnetization. Ultrathin CrI3/WSe2 heterostructure and observation of spontaneous magnetization. (A) Schematic of van der Waals heterostructure formed by monolayer WSe2 and ferromagnetic-layered semiconductor CrI3 and encapsulated by h-BN. (B) Top and side views of CrI3 crystal structure. (C) Optical microscope image of device 2. The WSe2/CrI3 heterostructure is sandwiched by optically transparent h-BN. Scale bar, 5 μm. (D) Spin-valley locking effect and valley-dependent optical selection rules in monolayer WSe2. Dashed (solid) lines indicate the band edges before (after) exchange field coupling. Black arrows denote spins. (E) Circularly polarized PL spectra above TC (65 K, left) and below TC (5 K, right) in the absence of an applied magnetic field. It is evident that the valley degeneracy is lifted at 5 K because of the magnetic proximity effect. Ding Zhong et al. Sci Adv 2017;3:e1603113 Copyright © 2017, The Authors

Fig. 2 Ferromagnetic substrate control of spin and valley pseudospin dynamics. Ferromagnetic substrate control of spin and valley pseudospin dynamics. (A) Maps of the total PL intensity as a function of emission energy and applied magnetic field for left circular (L) and right circular (R) excitation. The black arrow indicates the applied magnetic field sweeping direction. (B) RR and LL spectra at selected magnetic fields [indicated by the white arrows in (A)]. See text for definition of RR and LL. a.u., arbitrary units. (C) Valley splitting and (D) normalized PL intensity difference between RR and LL (ρ) as a function of applied magnetic field sweeping up (orange) and down (green). Insets in (D) are zoomed-in plots of hysteresis curves. (E) Schematic depicting the spin orientation–dependent charge hopping between WSe2 and CrI3, which leads to the excitation helicity-dependent PL intensity in (A). See text for detailed description. (F) PL spectral linewidth (blue) and intensity (purple) versus applied magnetic field (sweeping from positive to negative) for the LL condition. Broad width is always associated with weak PL intensity. Ding Zhong et al. Sci Adv 2017;3:e1603113 Copyright © 2017, The Authors

Fig. 3 Polarization-resolved micro-PL imaging of domain structures. Polarization-resolved micro-PL imaging of domain structures. Each panel is a spatial map of ρ (see text for definition) at the indicated applied magnetic field. Left and right columns are arranged in a time-reversal manner corresponding to increasing (left) and decreasing (right) applied magnetic field, respectively. The blue arrow indicates a domain in which the sign of ρ flips three times by sweeping the field, whereas the red arrow points to a domain that flips the sign of ρ only once. Scale bar, 3 μm. Ding Zhong et al. Sci Adv 2017;3:e1603113 Copyright © 2017, The Authors

Fig. 4 Position-sensitive ferromagnetic domain dynamics. Position-sensitive ferromagnetic domain dynamics. (A) Spatial map of ρ from Fig. 3 (−0.5 T, sweep down) with blue, gray, brown, and black circles indicating the spots of selected magnetic field sweeps of ρ in (B), (C), (D), and (E). Ding Zhong et al. Sci Adv 2017;3:e1603113 Copyright © 2017, The Authors