Fig. 3 Voltage-driven phase switching in a 1T-TaS2 nano-thick crystal.

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Fig. 3 Voltage-driven phase switching in a 1T-TaS2 nano-thick crystal. Voltage-driven phase switching in a 1T-TaS2 nano-thick crystal. (A and B) Current-voltage (I-V) characteristics (A) and simultaneously measured Rs versus voltage curves (B) of a 24-nm-thick crystal measured at 95 K (blue lines) and 165 K (red lines). The sweeping rate was 10 mV/s at 95 K and 50 mV/s at 165 K, respectively. (C) Temperature dependence of Rs before and after the applications of in-plane voltage. The green curve was taken before the application of voltage. After applying voltage at 95 K, the crystal was cooled down to 2 K and warmed up to 165 K, which is shown as a blue curve. Subsequently, we applied voltage on the crystal at 165 K and cooled and heated the crystal, which is shown as a red curve. T* is the temperature above which the crystal recovers to its normal NCCDW phase. Masaro Yoshida et al. Sci Adv 2015;1:e1500606 Copyright © 2015, The Authors