VFB = 1/q (G- S).

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VFB = 1/q (G- S).

Presentation transcript:

VFB = 1/q (G- S)

(includes semiconductor and oxide components) (position of the Fermi level) (the amount of “band bending”) - - - VFB= - Vbi

Degenerate Semiconductors As the doping conc. increases more, EF rises above EC EV EC (intrinsic) available impurity band states EF DEg EC (degenerate) ~ ED filled impurity band states apparent band gap narrowing: DEg* (is optically measured) - Eg* is the apparent band gap: an electron must gain energy Eg* = EF-EV

Quantum Effects on Threshold Voltage