Fig. 1 Atomic structure of U1−xThxSb2.

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Fig. 1 Atomic structure of U1−xThxSb2. Atomic structure of U1−xThxSb2. (A) Constant current topographic image on USb2, taken at a set point bias of 500 mV and a current of 200 pA, showing the atomic surface. (B) The topograph shows two terraces separated by 2x c axis exposing two surfaces with the same chemical termination. The panel above the topograph is a linecut, perpendicular to the step, crossing both terraces. (C) Constant current topographic image on the U1−xThxSb2 for x = 0.5%, taken at a set point bias of −400 mV and a current of −1.5 nA, showing the atomic surface with four distinct types of defects resulting from Th substitution of U atoms. (D) Crystal structure of USb2. The top layer corresponds to the Sb2 layer exposed upon cleaving. The circles mark the position of Th substitutions across two unit cells. The lower panel is a top-down view of the top 3 layers (Sb2-U-Sb1). (E to H) Th substitutions of U atoms in the first (red circle), second (black circle), third (purple circle), and Sb1 (green circle) layers, respectively. The colored circles show the location of the same defects in the compound’s crystal structure (Fig. 1D). Ioannis Giannakis et al. Sci Adv 2019;5:eaaw9061 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).