Electronic states of U1−xThxSb2 and their temperature evolution

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Fig. 2 Electronic states of U1−xThxSb2 and their temperature evolution. Electronic states of U1−xThxSb2 and their temperature evolution. (A) Evolution of the dI/dV spectra (Vbias = −400 mV, Iset point = −2 nA) from 80 to 8.7 K for x = 0.3%. At T = 80 K, a partial gap associated with the AFM state of USb2, as well as a broad hump inside the AFM gap at E0 = 5 meV, can be seen. Below T* = 45 K, the spectral form changes abruptly, revealing two sharp peaks at E1 = −20 meV and E2 = 30 meV. The dashed lines are fit of the data to three Fano line shapes and a parabolic background. For the spectra above 50 K, only a single Fano is fitted. (B) Neutron scattering data of the temperature dependence of the AFM Bragg peak (1:1:0.5) that onsets at TN = 203 K. Inset: θ − 2θ of the magnetic Bragg peak at 10 K (blue dotted line) and a Gaussian fit (red line). a.u., arbitrary units. (C) STM spectra of USb2 and URu2Si2 that show a similar structure near the Fermi energy. The URu2Si2 spectrum is taken from (25). It corresponds to the Si-terminated surface, which is analogous to the Sb2-terminated surface of USb2. (D and E) Temperature dependence of the HWHM of the E0 and E1 resonances, respectively. The lines are fit to Γ=(πkBT)2+2(kBTK)2. Ioannis Giannakis et al. Sci Adv 2019;5:eaaw9061 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).