Options investigated in GOSSAMER

Slides:

Advertisements

Similar presentations

DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference ITRS FEP Challenges Continued scaling will require the introduction of new materials.

Advertisements

COEN 180 Flash Memory.

Circuit Modeling of Non-volatile Memory Devices

MURI 1 Rutgers Advanced Gate Stacks and Substrate Engineering Eric Garfunkel and Evgeni Gusev Rutgers University Departments of Chemistry and Physics Institute.

School of Electrical and Electronic Engineering Queens University Belfast, N.Ireland Course Tutor Dr R E Hurley Northern Ireland Semiconductor Research.

Memory Memory technologies

Department of Electronics Advanced Information Storage 11 Atsufumi Hirohata 16:00 11/November/2013 Monday (P/L 002)

Comparison among modeling approaches for gate current computation in advanced gate stacks ARCES: N.Barin, C.Fiegna, E.Sangiorgi BU: P.A.Childs FMNT-CNRS:

Advancing Strained Silicon A O’Neill, S Olsen, University of Newcastle P-E Hellstrom, M Ostling, KTH K Lyutovich, E Kasper, University of Stuttgart.

Sistemi Elettronici Programmabili1 Progettazione di circuiti e sistemi VLSI Anno Accademico Lezione Memorie (vedi anche i file pcs1_memorie.pdf.

Derek Wright Monday, March 7th, 2005

Digital Integrated Circuits A Design Perspective

Elettronica T AA Digital Integrated Circuits © Prentice Hall 2003 SRAM & DRAM.

Chun-Chieh Lu Carbon-based devices on flexible substrate 1.

Monolithic 3D DRAM Technology

Simulations of sub-100nm strained Si MOSFETs with high- gate stacks

High-K Dielectrics The Future of Silicon Transistors

ITRS 2003 Front End Processing Challenges David J. Mountain *Gate Stack Leff Control *Memory Cells Dopant Control Contacts *Starting Material FEP Grand.

Utilizing Printed Electronics Methods for the Fabrication of Multi-layer PC Boards D. R. Hines Laboratory for Physical Sciences College Park, MD John Bolger,

EE143 –Ali JaveySlide 10-1 Section 10: Layout. EE143 –Ali Javey Layout Design Rules (1) Absolute-Value Design Rules * Use absolute distances (2) -based.

MonolithIC 3D  Inc. Patents Pending 1 The Monolithic 3D-IC A Disruptor to the Semiconductor Industry.

Alternative technologies for Low Resistance Strip Sensors (LowR) at CNM CNM (Barcelona), SCIPP (Santa Cruz), IFIC (Valencia) M. Ullán, V. Benítez, J. Montserrat,

Digital Integrated Circuits© Prentice Hall 1995 Memory SEMICONDUCTOR MEMORIES.

S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture 32: Array Subsystems (DRAM/ROM) Prof. Sherief Reda Division of Engineering,

Next Generation Integrated Circuits 300 mm wafers Copper metallization Low-K dielectric under interconnect lines High-K dielectric under gate Silicon-on-insulator.

Phase change memory technology Rob Wolters September 2008.

Reliability of ZrO 2 films grown by atomic layer deposition D. Caputo, F. Irrera, S. Salerno Rome Univ. “La Sapienza”, Dept. Electronic Eng. via Eudossiana.

National Institute of Science & Technology Technical Seminar Presentation-2004 Presented By: Arjun Sabat [EE ] Flash Memory By Arjun Sabat Roll.

1. A clean single crystal silicon (Si) wafer which is doped n-type (ColumnV elements of the periodic table). MOS devices are typically fabricated on a,

IC Process Integration

Performance Challenges of Future DRAM´s SINANO WS, Munich, Sept. 14th, 2007 M. Goldbach / J. Faul.

1 Review Of “A 125 MHz Burst-Mode Flexible Read While Write 256Mbit 2b/c 1.8V NOR Flash Memory” Adopted From: “ISSCC 2005 / SESSION 2 / NON-VOLATILE MEMORY.

Digital Integrated Circuits© Prentice Hall 1995 Memory SEMICONDUCTOR MEMORIES Adapted from Jan Rabaey's IC Design. Copyright 1996 UCB.

Norhayati Soin 06 KEEE 4426 WEEK 14/2 31/03/2006 CHAPTER 6 Semiconductor Memories.

Nanotechnology on our Desktops Hard Disk Sensor Medium Transistor Gate SourceDrain Switching layer 5 nm Magnetic grain 10 nm Gate oxide 4 nm Well 6 nm.

Advanced Materials Research Center, AMRC, International SEMATECH Manufacturing Initiative, and ISMI are servicemarks of SEMATECH, Inc. SEMATECH, the SEMATECH.

Washington State University

© 2008, Reinaldo Vega UC Berkeley Top-Down Nanowire and Nano- Beam MOSFETs Reinaldo Vega EE235 April 7, 2008.

Novel Metal-Oxide-Semiconductor Device

LHCb Vertex Detector and Beetle Chip

COEN 180 Flash Memory. Floating Gate Fundamentals Floating Gate between control gate and channel in MOSFET. Not directly connected to an outside line.

Test structures for the evaluation of TowerJazz 180 nm CMOS Imaging Sensor technology  ALICE ITS microelectronics team - CERN.

Atomic Layer Deposition - ALD

31nm Al 2 O 3, ZrO 2, HfO 2, … M1 M2 M3 M4 M5 © imec 2002.

June 13, MURI Annual Review X. J. Zhou, et al 1 Effects of Switched-Bias Annealing on Charge Trapping in HfO 2 high-  Gate Dielectrics X. J.

반도체 메모리 구조의 이해 Koo, Bon-Jae Dec. 5, 2007.

3 차원 구조의 고집적 charge trap 플래시 메모리 개발 1/ 년 xx 월 xx 일 School of EE, Seoul National University 대표 학생김승현 과제 책임자박병국 교수님.

ALD Oxide Nanolaminates Final Presentation Member: Yi (Alice) Wu, Shimeng Yu, Shuang Li Mentor: J Provine.

05-1 Digital Integrated Circuits 05: Advanced Fabrication & Lithography Revision

Nonvolatile memories:

20-NM CMOS DESIGN.

CMOS Process Flow.

Metal nanoparticle embedded floating gate memory based on MoS2 with polymer tunneling dielectric layer. Myung Hun Woo1, Byung Chul Jang1, Junhwan Choi2,

Chapter 1 & Chapter 3.

Digital Integrated Circuits A Design Perspective

Information Storage and Spintronics 09

Disk scheduling In multiprogramming systems several different processes may want to use the system's resources simultaneously. The disk drive needs some.

Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si

Digital Integrated Circuits A Design Perspective

MOSFET Scaling ECE G201.

Semiconductor Memories

VLSI Lay-out Design.

Introduction to 3D NAND Dec 1st, 2011 Semiconductor.

V.Navaneethakrishnan Dept. of ECE, CCET

Electrical and Computer Engineering Department

Manufacturing Process I

Lecture 20: CAMs, ROMs, PLAs

Information Storage and Spintronics 08

Presentation transcript:

Options investigated in GOSSAMER Tunnel dielectric Trapping layer Blocking layer Gate material SiO2 (nitrided) Si3N4 Al2O3 Ta Standard TANOS Options investigated in GOSSAMER SiO2 different growth conditions Nitrided SiO2 different growth conditions BE dielectric (SiO2 /Si3N4/HTO or re-ox) Si3N4 different stochiometries HfO2 different deposition/thermal treatment ZrO2 different deposition/thermal treatment ZrAlO and ZrSiO nanolaminates LaAlO nanolaminates Al2O3 different deposition/thermal treatment “ “ with SiO2 buffer layers HfAlO, LaAlO DyScO, GdScO, TbO, TbSCO TiN TaN different deposition TaC technologies TaCN

1Gb TANOS demonstrator Numonyx inserted the Charge Trap cell into a 1Gbit 1.8V NAND device adapting cell pitch at row and column decoders thanks to an advanced copper metallization The device includes 1.8 billion cells but only 1 G is addressable due to the re-use of an existing cell design. 500Mbit array RAM Picture of 1Gbit NAND Charge Trap Flash Schematic layout ~40nm 2

22nm demonstration 4Mbit addressable array at 25nm In Self-Aligned structure, W narrowing increases P/E efficiency Down to 1x nm node we estimate no significant degradation of P/E windows

3-D architectures Multi-plane architecture Vertical SONOS Cell(imec) - Effect of floating body channel Effect of poly-silicon channel Effect of wrap-around SONOS cell 30nm 25nm OXIDE gate Program v.s. diameter programming voltage