What is graphene? In late 2004, graphene was discovered by Andre Geim and Kostya Novoselov (Univ. of Manchester). - 2010 Nobel Prize in Physics Q1. How.

Slides:



Advertisements
Similar presentations
some things you might be interested in knowing about Graphene
Advertisements

Solids Image:Wikimedia Commons User Alchemistry-hp.
Chapter 21: Bonding in Metals, Alloys, and Semiconductors Did you read Chapter 21 before coming to class? A.Yes B.No.
Graphene & Nanowires: Applications Kevin Babb & Petar Petrov Physics 141A Presentation March 5, 2013.
Chun-Chieh Lu Carbon-based devices on flexible substrate 1.
© 2013 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 3 Crystals and Lattices Online reference:
Jared Johnson & Jason Peltier
Introduction SiC substrate Process Expitaxial graphene on Si – face Expitaxial graphene on C – face Summary Graphene synthesis on SiC.
Optics on Graphene. Gate-Variable Optical Transitions in Graphene Feng Wang, Yuanbo Zhang, Chuanshan Tian, Caglar Girit, Alex Zettl, Michael Crommie,
Physics 218: Mechanics Instructor: Dr. Tatiana Erukhimova Lecture 11.
M V V K Srinivas Prasad K L University.  Ohm’s Law ◦ At constant temperature the current flowing through a conductor is directly proportional to the.
23 April 2001Doug Martin1 Diamond: A Story of Superlatives.
SEMICONDUCTORS Semiconductors Semiconductor devices
Carbon nanomaterials DCMST June 2 nd, 2011 Gavin Lawes Wayne State University.
Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.
24 th Modern Engineering & Technology Seminar (METS 2012), Taipei, Taiwan, Nov , 2012 Carbon Nanomaterials and Nanocomposites LA-UR: Author:Quanxi.
Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 6 Lecture 6: Integrated Circuit Resistors Prof. Niknejad.
Graduate School of Engineering Science, Osaka University
Background about Carbon Nanotubes CAR Seminar 5 November 2010 Meg Noah.
Graphene Boris Torres MEEN 3344 Material Science.
PROPERTIES OF CARBON NANOTUBES
Chap. 41: Conduction of electricity in solids Hyun-Woo Lee.
Electrical Conductivity
ELECTRON AND PHONON TRANSPORT The Hall Effect General Classification of Solids Crystal Structures Electron band Structures Phonon Dispersion and Scattering.
Properties of bonding Mrs. Kay.
Electronic state calculation for hydrogenated graphene with atomic vacancy Electronic state calculation of hydrogenated graphene and hydrogenated graphene.
Graphene - Electric Properties
S. A. Giamini. Graphene A hexagonal honeycomb lattice of carbon. In its basic form it is a one-atom thick (2D) sheet. Interesting properties: Better electric.
Carbon. Allotropes Carbon can bond with itself in at least three different ways giving us 4 different materials –Diamond –Graphite –Buckyballs and nanotubes.
The Nobel Prize in Physics 2010 The Royal Swedish Academy of Sciences has decided to award the Nobel Prize in Physics for 2010 to Andre Geim and Konstantin.
I. Introduction  Carbon nanotubes (CNTs), composed of carbon and graphite sheets, are tubular shaped with the appearance of hexagonal mesh with carbon.
Carbon Nanotubes and Its Devices and Applications
What is Graphene?  It is made of a single layer of carbon atoms that are bonded together in a repeating pattern of hexagons  It is one million times.
Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.
Graphene Abstract -Origin of graphene -Structure
Raman Aggarwal NPRE 498. What is Graphene.....? Single thin layer of pure Carbon Hexagonal Honeycomb Lattice Bond Length of nanometer Interplanar.
Carbon Allotropes Fullerenes Carbon nanotubes Graphene Diamond.
EEE 2056 Physical Electronic Graphene and its application
EEE 2056 PHYSICAL ELECTRONICS ASSIGNMENT
Graphene and its applications EEE2056 Physical Electronics Trimester 2, 2015/2016 Student ID:
Quantum transport in GFET for a graphene monolayer
Graphene theory devices and applications
Announcements Added a final homework assignment on Chapter 44, particle physics and cosmology. Chap 42 Homework note: Binding energy is by convention positive.
Graphene Based Transistors-Theory and Operation; Development State
Conjugated Organic Materials
Floating gate memory based on MoS2 channel and iCVD polymer dielectric
EE 315/ECE 451 Nanoelectronics I
Conductivity Charge carriers follow a random path unless an external field is applied. Then, they acquire a drift velocity that is dependent upon their.
Solids: Conductors, Insulators and Semiconductors
GRAPHENe. Introduction  Graphene can be described as a one-atom thick layer of graphite.  It is the basic structural element of other allotropes, including.
Lecture 1 OUTLINE Important Quantities Semiconductor Fundamentals
Institute of Electronics, Bulgarian Academy of Sciences,
Materials Classification and Properties Metals, Ceramics, and Semiconductors NANO 52 Foothill College.
Riphah International University, Lahore
Covalent Network Solids
Prof. Jang-Ung Park (박장웅)
Jared Johnson & Jason Peltier

Solids Image:Wikimedia Commons User Alchemistry-hp.
Solids Image:Wikimedia Commons User Alchemistry-hp.
Read: Chapter 2 (Section 2.2)
Chemical Bond in Metals and Semiconductors
Lecture 1 OUTLINE Important Quantities Semiconductor Fundamentals
Introduction to Materials Science and Engineering
Lecture 1 OUTLINE Semiconductor Fundamentals
Nonlinear response of gated graphene in a strong radiation field
Aim: What are the four types of solids?
Taught by Professor Dagotto
Properties of Nano Materials
Presentation transcript:

What is graphene? In late 2004, graphene was discovered by Andre Geim and Kostya Novoselov (Univ. of Manchester). - 2010 Nobel Prize in Physics Q1. How thick is it? a million times thinner than paper (The interlayer spacing : 0.33~0.36 nm) Q2. How strong is it? stronger than diamond (Maximum Young's modulus : ~1.3 TPa) Q3. How conductive is it? better than copper (The resistivity : 10−6 Ω·cm) (Mobility: 200,000 cm2 V-1 s-1) But, weak bonding between layers Seperated by mechanical exfoliation of 3D graphite crystals.

Electrons move freely across the plane through delocalized pi-orbitals Molecular structure of graphene Carbon 2D graphene sheet bucky ball CNT 3D graphite Electrons move freely across the plane through delocalized pi-orbitals

Electronic structure of graphene Effective mass (related with 2nd derivative of E(k) )  Massless Graphene charged particle is massless Dirac fermion.  Zero gap semiconductor or Semi-metal K Ef K’ Pz anti bonding Conduction band Fermi energy Pz bonding Valence band 2DEG

Electrical properties of graphene High electron mobility at room temperature: Electronic device. Si Transistor, HEMT devices are using 2D electron or hole. μ (mobility) = vavg / E (velocity/electric field) Jdrift ~ ρ x vavg

Optical properties of graphene Optical transmittance control: transparent electrode Reduction of single layer: 2.3% F. Bonaccorso et al. Nat. Photon. 4, 611 (2010)

Force-displacement measurement Mechanical properties of graphene Mechanical strength for flexible and stretchable devices Young’s modulus =tensile stress/tensile strain Diamond ~ 1200 GPa Force-displacement measurement C. Lee et al. Science 321, 385 (2008)

Graphene growth by chemical vapor deposition SiC sublimation Metal catalysis CVD Ni: non uniform multi Cu: uniform single  Cu: layer by layer growth Current Status Solid Carbon : Low temp. Nat.mat.2009.203. Ar1atm,1450~1650°C Terrace size increase. Nat.2010.549. ACS nano,2011 High temperature growth :1200~1500°C Non-uniform growth in Step edge and terrace. High cost SiC wafer : SiC growth on Si No transfer required Low temperature growth :below 1000°C Unform growth : Capet like (Large area) Si CMOS compatible process. “Transfer required” Pros& Cons

Large area graphene K. S. Kim et al. Nature 457, 706 (2009) S. Bae et al. Nat. Nano. 5, 574 (2010)

PSCs with graphene anodes b 5.1 3.3 Al 4.3 TiOx 8.0 eV 6.0 PC71BM 5.4 GR/PEDOT: PSS (DT) 5.0 PTB7 -F40 PEDOT :PSS PCE (%) Device Substrate Electrode Method Voc (V) Jsc (mA cm-2) FF Average Best PSC Glass ITO RF sputtering 0.68 14.1 0.61 5.80 ± 0.06 5.86 GR CT 0.65 11.1 0.55 2.69 ± 1.80 3.92 DT 12.1 0.67 4.85 ± 0.24 5.49 PET 0.64 14.3 0.52 4.52 ± 0.18 4.74 12.5 0.60 4.57 ± 0.21 4.81

PLEDs with graphene anodes 5.4 2.4 4.8 eV 4.3 Ca 2.9 5.1 GR/PEDOT: PSS (DT) SY Al PEDOT :PSS

PLEDs with graphene or ITO anodes 2 cm Device Substrate Electrode Method LEmax (lm W-1) CEmax (cd A-1) VT (V) Lmax (cd m-2) PLED Glass ITO RF sputtering 1.87 5.15 4.5 4750 GR CT 1.37 3.69 3150 DT 4.14 4.0 4000